JPWO2008059612A1 - 半導体封止用エポキシ樹脂組成物及び半導体装置 - Google Patents
半導体封止用エポキシ樹脂組成物及び半導体装置 Download PDFInfo
- Publication number
- JPWO2008059612A1 JPWO2008059612A1 JP2008544069A JP2008544069A JPWO2008059612A1 JP WO2008059612 A1 JPWO2008059612 A1 JP WO2008059612A1 JP 2008544069 A JP2008544069 A JP 2008544069A JP 2008544069 A JP2008544069 A JP 2008544069A JP WO2008059612 A1 JPWO2008059612 A1 JP WO2008059612A1
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- component
- semiconductor
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 0 CC(CC(C=CC(O)=C1C(*)(*)c2c(CCC*3(*)C4=*3)c4ccc2OCC2OC2)C1=C1)=CC1OCC1OC1 Chemical compound CC(CC(C=CC(O)=C1C(*)(*)c2c(CCC*3(*)C4=*3)c4ccc2OCC2OC2)C1=C1)=CC1OCC1OC1 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/688—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
融点が50℃以上、150℃以下の結晶性エポキシ樹脂(a1)と、下記一般式(1)で表されるエポキシ樹脂(a2)と、下記一般式(2)で表されるエポキシ樹脂及び下記一般式(3)で表されるエポキシ樹脂から選ばれる少なくとも1つのエポキシ樹脂(a3)と、を含むエポキシ樹脂(A)(但し、前記(a1)成分は前記(a2)成分、前記(a3)成分とは異なる)を含み、
樹脂組成物のEMMI−1−66法によるスパイラルフローが80cm以上であり、
樹脂組成物の硬化物のガラス転移温度が150℃以上であり、
樹脂組成物の硬化物のガラス転移温度以下における線膨張係数が5ppm/℃以上、10ppm/℃以下であることを特徴とする半導体封止用エポキシ樹脂組成物、が提供される。
(但し、上記一般式(1)において、R1は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていても良い。R2は水素又は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていてもよい。nは0〜6の整数である。)
本発明では、エポキシ樹脂(A)として、融点が50℃以上、150℃以下の結晶性エポキシ樹脂(a1)と、下記一般式(1)で表されるエポキシ樹脂(a2)と、下記一般式(2)で表されるエポキシ樹脂及び下記一般式(3)で表されるエポキシ樹脂から選ばれる少なくとも1つのエポキシ樹脂(a3)と、を含む(但し、前記(a1)成分は前記(a2)成分、前記(a3)成分とは異なる)ことが好ましい。(a1)成分、(a2)成分、(a3)成分の配合割合については、特に限定するものではないが、(a1)成分、(a2)成分、(a3)成分の合計量に対して、(a1)成分が60重量%以上、95重量%以下、(a2)成分が2.5重量%以上、20重量%以下、(a3)成分が2.5重量%以上、20重量%以下であることが好ましい。各成分の配合割合が上記範囲内にあると、流動性、低応力性に優れ、特にエリア表面実装型半導体パッケージの製造における封止成形から表面実装に亘る各工程後における常温での反り変動量と、表面実装時の高温下での反り量とがともに小さい樹脂組成物を得るのに好適である。
これらの化合物は、1種類を単独で用いても2種類以上を併用しても良い。
(但し、上記一般式(1)において、R1は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていても良い。R2は水素又は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていてもよい。nは0〜6の整数である。)
(但し、上記一般式(2)において、R1は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていても良い。R2は水素又は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていてもよい。mは0〜5の整数、nは0〜6の整数である。)
・エポキシ樹脂1:下記式(4)で表される4,4'−ビス(2,3−エポキシプロポキシ)−3,3'5,5'−テトラメチルビフェニルを主成分とするビフェニル型の結晶性エポキシ樹脂(ジャパンエポキシレジン製、YX−4000H。エポキシ当量186、融点105℃。ICI溶融粘度計による150℃における溶融粘度、0.15poise。) 6.14重量部
・エポキシ樹脂3:一般式(1)で表されるエポキシ樹脂(一般式(1)においてnは0、R2は水素原子。)50重量%、一般式(2)で表されるエポキシ樹脂(一般式(2)においてm、nは0、R2は水素原子。)40重量%、一般式(3)で表されるエポキシ樹脂(一般式(3)においてmは0、R2は水素原子。)10重量%の混合物(大日本インキ化学工業製、HP−4770。エポキシ当量204、軟化点72℃。) 1.10重量部
・フェノール樹脂系硬化剤1:フェノールノボラック樹脂(住友ベークライト製、PR−HF−3。水酸基当量104、軟化点80℃。)3.96重量部
・無機充填剤:溶融球状シリカ(平均粒径30μm) 88.00重量部
・硬化促進剤:トリフェニルホスフィン 0.20重量部
・離型剤:モンタン酸トリグリセリド(滴点80℃) 0.20重量部
・カップリング剤1:γ−グリシドキシプロピルトリメトキシシラン
0.10重量部
・カップリング剤2:γ−メルカプトプロピルトリメトキシシラン
0.10重量部
・着色剤:カーボンブラック 0.20重量部
をミキサーにて常温混合し、80〜100℃の加熱ロールで溶融混練、冷却後粉砕し、エポキシ樹脂組成物を得た。評価結果を表1に示す。
・熱履歴後反り量:成形後、後硬化(175℃、4時間)し、次いでIRリフロー処理(260℃、JEDEC条件に従う)を行い、更に125℃、8時間の乾燥工程を行った後の25℃でのパッケージ反り量
・熱履歴反り変動量:成形後の反り量をW1とし、熱履歴後反り量をW2としたときの差(W1−W2)
・熱時反り量:熱履歴後反り量を測定した後、更に、パッケージを260℃熱板上で加熱し温度が一定となったところで測定した反り量。
・成形直後(後硬化後も含む)の反りの値が80μm以上であると装置による搬送が困難になる。また、熱履歴反り変動量が40μm以上である場合も、成形後から実装工程においてパッケージを装置で搬送できなくなる可能性がある。熱時反り量に関しては、−90μmを超えるとマザーボード実装時に接続不良を起こす可能性が高くなる。
表1、表2の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を製造し、実施例1と同様に評価した。評価結果を表1、表2に示す。
実施例1以外で用いた成分について、以下に示す。
・エポキシ樹脂2:ビスフェノールA型の結晶性エポキシ樹脂(ジャパンエポキシレジン(株)製、YL−6810。エポキシ当量175、軟化点45℃。ICI溶融粘度計による150℃における溶融粘度、0.10poise。)
・エポキシ樹脂4:β−ナフトール、2,7−ジヒドロキシナフタレン、ホルムアルデヒドを原料として前述の製法により作製した、一般式(1)で表されるエポキシ樹脂(一般式(1)においてnは0、R2は水素原子。)65重量%、一般式(2)で表されるエポキシ樹脂(一般式(2)においてm、nは0、R2は水素原子。)25重量%、一般式(3)で表されるエポキシ樹脂(一般式(3)においてmは0、R2は水素原子。)10重量%の混合物(エポキシ当量212、軟化点68℃)
・エポキシ樹脂5:β−ナフトール、2,7−ジヒドロキシナフタレン、ホルムアルデヒドを原料として前述の製法により作製した、一般式(1)で表されるエポキシ樹脂(一般式(1)においてnは0、R2は水素原子。)85重量%、一般式(2)で表されるエポキシ樹脂(一般式(2)においてm、nは0、R2は水素原子。)10重量%、一般式(3)で表されるエポキシ樹脂(一般式(3)においてmは0、R2は水素原子。)5重量%の混合物(エポキシ当量227、軟化点67℃)
・エポキシ樹脂6:β−ナフトール、2,7−ジヒドロキシナフタレン、ホルムアルデヒドを原料として前述の製法により作製した一般式(2)で表されるエポキシ樹脂(一般式(2)においてm、nは0、R2は水素原子。)60重量%と、2,7−ジヒドロキシナフタレン、ホルムアルデヒドを原料として前述の製法により作製した一般式(3)で表されるエポキシ樹脂(一般式(3)においてmは0、R2は水素原子。)40重量%との混合物(エポキシ当量177、軟化点85℃)
・フェノール樹脂系硬化剤2:ビフェニレン骨格を有するフェノールアラルキル樹脂(明和化成(株)製、MEH−7851SS、水酸基当量203、軟化点66℃)
Claims (11)
- 融点が50℃以上、150℃以下の結晶性エポキシ樹脂(a1)と、下記一般式(1)で表されるエポキシ樹脂(a2)と、下記一般式(2)で表されるエポキシ樹脂及び下記一般式(3)で表されるエポキシ樹脂から選ばれる少なくとも1つのエポキシ樹脂(a3)と、を含むエポキシ樹脂(A)(但し、前記(a1)成分は前記(a2)成分、前記(a3)成分とは異なる)を含み、
樹脂組成物のEMMI−1−66法によるスパイラルフローが80cm以上であり、
樹脂組成物の硬化物のガラス転移温度が150℃以上であり、
樹脂組成物の硬化物のガラス転移温度以下における線膨張係数が5ppm/℃以上、10ppm/℃以下であることを特徴とする半導体封止用エポキシ樹脂組成物。
(但し、上記一般式(1)において、R1は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていても良い。R2は水素又は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていてもよい。nは0〜6の整数である。)
(但し、上記一般式(2)において、R1は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていても良い。R2は水素又は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていてもよい。mは0〜5の整数、nは0〜6の整数である。)
(但し、上記一般式(3)において、R1は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていても良い。R2は水素又は炭素数1〜4の炭化水素基であり、互いに同じであっても異なっていてもよい。mは0〜5の整数である。) - 前記結晶性エポキシ樹脂(a1)が、ビフェニル型エポキシ樹脂、ビスフェノール型エポキシ樹脂、スチルベン型エポキシ樹脂、ジヒドロキシベンゼン型エポキシ樹脂、及びナフタレン型エポキシ樹脂から選ばれる少なくとも1つの結晶性エポキシ樹脂であることを特徴とする請求項1に記載の半導体封止用エポキシ樹脂組成物。
- 前記(a1)成分、(a2)成分、(a3)成分の合計量に対する配合割合で、前記(a1)成分が60重量%以上、95重量%以下であることを特徴とする請求項2に記載の半導体封止用エポキシ樹脂組成物。
- 前記(a1)成分、(a2)成分、(a3)成分の合計量に対する配合割合で、前記(a1)成分が60重量%以上、95重量%以下、(a2)成分が2.5重量%以上、20重量%以下、(a3)成分が2.5重量%以上、20重量%以下であることを特徴とする請求項3に記載の半導体封止用エポキシ樹脂組成物。
- 更にフェノール樹脂系硬化剤(B)を含むことを特徴とする請求項1に記載の半導体封止用エポキシ樹脂組成物。
- 更に無機充填剤(C)を含むことを特徴とする請求項1に記載の半導体封止用エポキシ樹脂組成物。
- 更に硬化促進剤(D)を含むことを特徴とする請求項1に記載の半導体封止用エポキシ樹脂組成物。
- 前記樹脂組成物のEMMI−1−66法によるスパイラルフローが120cm以上であることを特徴とする請求項1に記載の半導体封止用エポキシ樹脂組成物。
- 請求項1に記載の半導体封止用エポキシ樹脂組成物を用いて半導体素子を封止してなる半導体装置。
- 請求項1に記載の半導体封止用エポキシ樹脂組成物が、基板の片面に半導体素子が搭載され、該半導体素子が搭載された基板面側の実質的に片面のみが半導体封止用エポキシ樹脂組成物を用いて封止されてなるエリア表面実装型の半導体装置の封止に用いられるものであることを特徴とする半導体封止用エポキシ樹脂組成物。
- 基板の片面に半導体素子が搭載され、該半導体素子が搭載された基板面側の実質的に片面のみが請求項10に記載の半導体封止用エポキシ樹脂組成物を用いて封止されてなることを特徴とするエリア表面実装型半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008544069A JP5564793B2 (ja) | 2006-11-15 | 2007-11-07 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006308850 | 2006-11-15 | ||
JP2006308850 | 2006-11-15 | ||
PCT/JP2007/001217 WO2008059612A1 (en) | 2006-11-15 | 2007-11-07 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
JP2008544069A JP5564793B2 (ja) | 2006-11-15 | 2007-11-07 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008059612A1 true JPWO2008059612A1 (ja) | 2010-02-25 |
JP5564793B2 JP5564793B2 (ja) | 2014-08-06 |
Family
ID=39401426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008544069A Active JP5564793B2 (ja) | 2006-11-15 | 2007-11-07 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8008410B2 (ja) |
JP (1) | JP5564793B2 (ja) |
KR (1) | KR101445888B1 (ja) |
CN (1) | CN101516993B (ja) |
MY (1) | MY148293A (ja) |
TW (1) | TWI417338B (ja) |
WO (1) | WO2008059612A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4986725B2 (ja) * | 2007-06-13 | 2012-07-25 | 株式会社Adeka | 複合材料 |
WO2010047169A1 (ja) * | 2008-10-22 | 2010-04-29 | Dic株式会社 | 硬化性樹脂組成物、その硬化物、プリント配線基板、エポキシ樹脂、及びその製造方法 |
JP5423783B2 (ja) * | 2009-02-25 | 2014-02-19 | パナソニック株式会社 | 熱伝導性組成物とこれを用いた放熱板、放熱基板、回路モジュール、熱伝導性組成物の製造方法 |
KR101142300B1 (ko) * | 2010-04-01 | 2012-05-07 | 주식회사 케이씨씨 | 반도체 소자 봉지용 에폭시 수지 조성물 |
JP5849390B2 (ja) * | 2010-11-10 | 2016-01-27 | 住友ベークライト株式会社 | エポキシ樹脂前駆体組成物、プリプレグ、積層板、樹脂シート、プリント配線板および半導体装置 |
CN102558769B (zh) * | 2010-12-31 | 2015-11-25 | 第一毛织株式会社 | 用于封装半导体器件的环氧树脂组合物以及由该环氧树脂组合物封装的半导体器件 |
CN103339722B (zh) * | 2011-11-21 | 2016-04-06 | 松下知识产权经营株式会社 | 电气零件用树脂、半导体装置及配线基板 |
JP6155587B2 (ja) * | 2012-09-21 | 2017-07-05 | Dic株式会社 | エポキシ樹脂、硬化性樹脂組成物、その硬化物、及びプリント配線基板 |
JP6436107B2 (ja) * | 2015-03-10 | 2018-12-12 | 住友ベークライト株式会社 | 封止用樹脂組成物、電子部品の製造方法、および電子部品 |
US10851217B2 (en) * | 2015-09-03 | 2020-12-01 | Toray Industries, Inc. | Epoxy resin composition, prepreg, and carbon fiber reinforced composite material |
WO2017220347A1 (en) * | 2016-06-22 | 2017-12-28 | Evonik Degussa Gmbh | Liquid encapsulant material |
US10224298B2 (en) * | 2016-09-02 | 2019-03-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device having glass transition temperature greater than binding layer temperature |
KR102604506B1 (ko) * | 2017-06-12 | 2023-11-21 | 오르멧 서키츠 인코퍼레이티드 | 양호한 사용가능 시간 및 열전도성을 갖는 금속성 접착제 조성물, 이의 제조 방법 및 이의 용도 |
JP6815293B2 (ja) * | 2017-08-16 | 2021-01-20 | 信越化学工業株式会社 | 半導体封止用熱硬化性エポキシ樹脂シート、半導体装置、及びその製造方法 |
KR102158873B1 (ko) * | 2017-12-29 | 2020-09-22 | 삼성에스디아이 주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용하여 밀봉된 반도체 장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3137202B2 (ja) | 1990-10-30 | 2001-02-19 | 大日本インキ化学工業株式会社 | エポキシ樹脂、その製造方法及びエポキシ樹脂組成物 |
JPH06239970A (ja) | 1993-02-16 | 1994-08-30 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JP3214266B2 (ja) | 1994-11-01 | 2001-10-02 | 信越化学工業株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JPH111541A (ja) | 1997-06-11 | 1999-01-06 | Hitachi Chem Co Ltd | 半導体封止用エポキシ樹脂組成物及びそれを用いた半導体装置 |
JPH11147940A (ja) | 1997-11-14 | 1999-06-02 | Toshiba Chem Corp | エポキシ樹脂組成物および半導体封止装置 |
JPH11147936A (ja) | 1997-11-19 | 1999-06-02 | Sumitomo Bakelite Co Ltd | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP4560871B2 (ja) | 2000-02-23 | 2010-10-13 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP2002069157A (ja) * | 2000-08-24 | 2002-03-08 | Nitto Denko Corp | 半導体封止用樹脂組成物、およびそれを用いた半導体装置、半導体ウエハ、ならびに半導体装置の実装構造 |
JP3826745B2 (ja) * | 2001-07-26 | 2006-09-27 | 松下電工株式会社 | コンデンサ封止用エポキシ樹脂組成物及びコンデンサ装置 |
JP4661033B2 (ja) | 2003-06-27 | 2011-03-30 | Dic株式会社 | エポキシ樹脂組成物、半導体封止材料及び半導体装置 |
JP2005097352A (ja) | 2003-09-22 | 2005-04-14 | Dainippon Ink & Chem Inc | エポキシ樹脂組成物、半導体封止材料及び半導体装置 |
JP4844733B2 (ja) * | 2005-06-24 | 2011-12-28 | 信越化学工業株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
-
2007
- 2007-10-31 US US11/980,760 patent/US8008410B2/en not_active Expired - Fee Related
- 2007-11-07 CN CN2007800343086A patent/CN101516993B/zh active Active
- 2007-11-07 WO PCT/JP2007/001217 patent/WO2008059612A1/ja active Application Filing
- 2007-11-07 KR KR1020097004512A patent/KR101445888B1/ko active IP Right Grant
- 2007-11-07 JP JP2008544069A patent/JP5564793B2/ja active Active
- 2007-11-07 MY MYPI20091340 patent/MY148293A/en unknown
- 2007-11-15 TW TW96143165A patent/TWI417338B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20090082344A (ko) | 2009-07-30 |
JP5564793B2 (ja) | 2014-08-06 |
MY148293A (en) | 2013-03-29 |
US8008410B2 (en) | 2011-08-30 |
CN101516993B (zh) | 2012-05-30 |
TWI417338B (zh) | 2013-12-01 |
TW200837136A (en) | 2008-09-16 |
KR101445888B1 (ko) | 2014-09-29 |
CN101516993A (zh) | 2009-08-26 |
US20080128922A1 (en) | 2008-06-05 |
WO2008059612A1 (en) | 2008-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5564793B2 (ja) | 半導体封止用エポキシ樹脂組成物及び半導体装置 | |
WO2006059542A1 (ja) | エポキシ樹脂組成物及び半導体装置 | |
WO2011043058A1 (ja) | 半導体装置 | |
JP2008163138A (ja) | 半導体封止用エポキシ樹脂組成物及び半導体装置 | |
JP4736432B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4736506B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP2006233016A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP2006152185A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4622221B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4496740B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4759994B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4543638B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP2005154717A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP5055778B2 (ja) | エポキシ樹脂組成物、エポキシ樹脂成形材料及び半導体装置 | |
JP4736406B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP5093977B2 (ja) | エリア実装型半導体装置 | |
JP2006225464A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4645147B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP3979634B2 (ja) | エポキシ樹脂組成物及び半導体装置 | |
JPH1192629A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP2006176554A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP2005041928A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JPH1160687A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JPH1192630A (ja) | エポキシ樹脂組成物及び半導体装置 | |
JP4556324B2 (ja) | エリア実装型半導体封止用エポキシ樹脂組成物及びエリア実装型半導体装置。 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100922 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130702 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140520 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140602 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5564793 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |