JPWO2008013236A1 - 誘電体磁器およびコンデンサ - Google Patents
誘電体磁器およびコンデンサ Download PDFInfo
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Abstract
Description
前記誘電体磁器を構成するバリウム1モルに対して、前記マグネシウムをMgO換算で0.02〜0.04モル、前記希土類元素(RE)をRE2O3換算で0.01〜0.03モル含み、さらにマンガンをMnO換算で0〜0.01モル含み、かつ前記結晶粒子の平均粒径が115〜145nmであることが望ましい。
本発明のコンデンサは、誘電体層と導体層とを交互に積層した積層体を含むものであって、前記誘電体層が、上記の誘電体磁器からなることを特徴とする。
チタン酸バリウム(BaTiO3)に対して、添加物(マグネシウム、希土類元素、マンガン)を表1に示す組み合わせで添加して焼成し、誘電体磁器を作製した(表1中の試料No.1〜30)。具体的には、まず、予め合成した平均粒径100nm(試料No.2は200nm)のBaTiO3粉末のバリウム1モル部に対して、表1に示す量の添加物を加え、混合粉末を調製した。次に、この混合粉末を温度1050℃、2時間にて仮焼し、仮焼粉末を得た。
作製した誘電体磁器であるこれらの試料について、組成分析を行った。試料の組成分析は、ICP分析もしくは原子吸光分析により行った。具体的には、まず、得られた誘電体磁器を硼酸と炭酸ナトリウムと混合し溶融させたものを塩酸に溶解させて、原子吸光分析により誘電体磁器に含まれる元素の定性分析を行った。次いで、特定した各元素について標準液を希釈したものを標準試料として、ICP発光分光分析にかけて定量化した。また、各元素の価数を周期表に示される価数として酸素量を求めた。その結果、得られた試料の組成は、表1に示す組成に相違ないものであった。
誘電体磁器の結晶粒子の平均粒径は、まず、得られた誘電体磁器の破断面を研磨した後、走査型電子顕微鏡を用いて内部組織の写真を撮る。次いで、その写真に映し出されている結晶粒子の輪郭から画像処理にて各粒子の面積を求め、同じ面積をもつ円に置き換えたときの直径を算出した。そして、このようにして直径を求めた結晶粒子約100個の平均値を求めた。
結晶粒子1の中心部1cにおける希土類元素の濃度C1/2、および、結晶粒子1における中心部1cと表面との中間1dにおける希土類元素の濃度C1/4は、断面を研磨し、FIB加工した誘電体磁器に対して元素分析機器(EDS)を付設した透過電子顕微鏡装置(TEM)を用いて測定した。
結晶構造、すなわち結晶相の同定は、X線回折(2θ=40〜50°、Cu−Kα)を用いて行った。このとき、X線回折パターンにおける(002)面および(200)面の回折ピークの分離が明確に見られないもの(図4(a)に相当)を立方晶系とした。また、(002)面および(200)面の回折ピークの分離が明確に現れているもの(図4(b)に相当)を正方晶系とした。
LCRメーターHP4284Aを用いて周波数1.0kHz、入力信号レベル1.0Vにて静電容量および誘電損失を測定し、試料の直径と厚みおよび導体膜の面積から25℃における比誘電率C25を算出した。また、比誘電率の変化率を−55〜125℃の範囲で測定した。
Claims (4)
- チタン酸バリウムを主成分とし、マグネシウムおよび希土類元素を含む結晶粒子により構成される誘電体磁器であって、前記誘電体磁器を構成するバリウム1モルに対して、マグネシウムをMgO換算で0.02〜0.064モル、希土類元素(RE)をRE2O3換算で0.01〜0.06モル含み、前記結晶粒子の結晶構造が立方晶系であり、かつ前記結晶粒子の平均粒径が100〜145nmであることを特徴とする誘電体磁器。
- 前記誘電体磁器を構成するバリウム1モルに対して、前記マグネシウムをMgO換算で0.02〜0.04モル、前記希土類元素(RE)をRE2O3換算で0.01〜0.03モル含み、さらにマンガンをMnO換算で0〜0.01モル含み、かつ前記結晶粒子の平均粒径が115〜145nmである請求項1に記載の誘電体磁器。
- 前記結晶粒子の中心部における希土類元素の濃度をC1/2、前記結晶粒子における中心部と表面との中間における希土類元素の濃度をC1/4としたときに、比(C1/2/C1/4)が0.75〜1である請求項1または2に記載の誘電体磁器。
- 誘電体層と導体層とを交互に積層した積層体を含むコンデンサであって、前記誘電体層が、請求項1〜3のいずれかに記載の誘電体磁器からなることを特徴とするコンデンサ。
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PCT/JP2007/064702 WO2008013236A1 (fr) | 2006-07-27 | 2007-07-26 | Porcelaine diélectrique et condensateur |
JP2008526814A JP5039039B2 (ja) | 2006-07-27 | 2007-07-26 | 誘電体磁器およびコンデンサ |
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JP (1) | JP5039039B2 (ja) |
CN (1) | CN101479212B (ja) |
TW (1) | TWI367873B (ja) |
WO (1) | WO2008013236A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4959634B2 (ja) * | 2008-03-26 | 2012-06-27 | 京セラ株式会社 | 誘電体磁器およびコンデンサ |
JP5025570B2 (ja) * | 2008-04-24 | 2012-09-12 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP5067401B2 (ja) * | 2009-06-30 | 2012-11-07 | 株式会社村田製作所 | 誘電体セラミックおよびその製造方法ならびに積層セラミックコンデンサ |
US8263515B2 (en) | 2009-08-29 | 2012-09-11 | Fatih Dogan | Nanostructured dielectric materials for high energy density multi layer ceramic capacitors |
US8181134B2 (en) | 2009-10-16 | 2012-05-15 | International Business Machines Corporation | Techniques for performing conditional sequential equivalence checking of an integrated circuit logic design |
KR20130042578A (ko) | 2010-09-17 | 2013-04-26 | 가부시키가이샤 무라타 세이사쿠쇼 | 유전체 세라믹, 적층 세라믹 콘덴서, 및 이들의 제조방법 |
JP5804064B2 (ja) * | 2011-08-11 | 2015-11-04 | 株式会社村田製作所 | 積層セラミックコンデンサの製造方法 |
JP6026883B2 (ja) * | 2012-12-27 | 2016-11-16 | 京セラ株式会社 | 圧電部品 |
CN105453201B (zh) * | 2013-07-30 | 2018-10-02 | 京瓷株式会社 | 电介质膜、膜电容器以及电子设备 |
US10395828B2 (en) * | 2015-10-28 | 2019-08-27 | Kyocera Corporation | Capacitor |
JP6933326B2 (ja) * | 2017-03-08 | 2021-09-08 | 太陽誘電株式会社 | 積層セラミックコンデンサ及びその製造方法 |
WO2020102416A1 (en) * | 2018-11-13 | 2020-05-22 | Drexel University | Nanocrystalline high-k low-leakage thin films |
KR102624590B1 (ko) * | 2020-12-07 | 2024-01-12 | 한국과학기술원 | 유전체 세라믹, 이의 제조 방법, 및 이를 포함하는 적층형 전자 부품 |
KR102620993B1 (ko) * | 2021-07-30 | 2024-01-05 | 한국과학기술원 | 고유전율 및 저유전손실을 가지는 세라믹 유전체 및 이의 제조 방법 |
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JP4522025B2 (ja) | 2001-07-30 | 2010-08-11 | 京セラ株式会社 | 誘電体磁器及び積層型電子部品並びに積層型電子部品の製法 |
JP4423052B2 (ja) | 2004-01-28 | 2010-03-03 | 京セラ株式会社 | 積層セラミックコンデンサおよびその製法 |
KR100586961B1 (ko) * | 2004-04-14 | 2006-06-08 | 삼성전기주식회사 | 내환원성 유전체 자기조성물과 초박층 적층세라믹 콘덴서 |
JP4931697B2 (ja) * | 2007-05-29 | 2012-05-16 | 京セラ株式会社 | 誘電体磁器およびコンデンサ |
KR100946016B1 (ko) * | 2007-11-16 | 2010-03-09 | 삼성전기주식회사 | 저온 소성 및 고온 절연저항 강화용 유전체 조성물 및 이를이용한 적층 세라믹 커패시터 |
-
2007
- 2007-07-26 WO PCT/JP2007/064702 patent/WO2008013236A1/ja active Application Filing
- 2007-07-26 CN CN2007800244659A patent/CN101479212B/zh active Active
- 2007-07-26 US US12/375,386 patent/US8097551B2/en not_active Expired - Fee Related
- 2007-07-26 JP JP2008526814A patent/JP5039039B2/ja not_active Expired - Fee Related
- 2007-07-27 TW TW096127597A patent/TWI367873B/zh not_active IP Right Cessation
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JPH04349168A (ja) * | 1991-05-27 | 1992-12-03 | Tdk Corp | セラミック誘電体材料、積層セラミックコンデンサおよび積層セラミックコンデンサの経時劣化防止方法 |
JP2005255461A (ja) * | 2004-03-11 | 2005-09-22 | Tdk Corp | 電子部品、誘電体磁器組成物およびその製造方法 |
Also Published As
Publication number | Publication date |
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JP5039039B2 (ja) | 2012-10-03 |
CN101479212B (zh) | 2012-12-26 |
US20090207556A1 (en) | 2009-08-20 |
WO2008013236A1 (fr) | 2008-01-31 |
US8097551B2 (en) | 2012-01-17 |
TWI367873B (en) | 2012-07-11 |
TW200815307A (en) | 2008-04-01 |
CN101479212A (zh) | 2009-07-08 |
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