JPWO2007138657A1 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JPWO2007138657A1 JPWO2007138657A1 JP2008517721A JP2008517721A JPWO2007138657A1 JP WO2007138657 A1 JPWO2007138657 A1 JP WO2007138657A1 JP 2008517721 A JP2008517721 A JP 2008517721A JP 2008517721 A JP2008517721 A JP 2008517721A JP WO2007138657 A1 JPWO2007138657 A1 JP WO2007138657A1
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- emitting device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 84
- 239000000203 mixture Substances 0.000 claims description 80
- 230000004888 barrier function Effects 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 230000007423 decrease Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 22
- 238000002347 injection Methods 0.000 abstract description 16
- 239000007924 injection Substances 0.000 abstract description 16
- 229910052594 sapphire Inorganic materials 0.000 abstract description 11
- 239000010980 sapphire Substances 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 33
- 238000010586 diagram Methods 0.000 description 19
- 238000005253 cladding Methods 0.000 description 15
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 15
- 238000005401 electroluminescence Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- 238000000295 emission spectrum Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 GaN Chemical compound 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
2 バッファ層
3 アンドープGaN層
4 n型GaNコンタクト層
5 InGaN/GaN超格子層
6 活性層
6a 障壁層
6b 障壁層
6c 井戸層
7 アンドープInGaN層
8 p型GaN系コンタクト層
9 p電極
10 n電極
11 p型AlGaNクラッド層
Claims (11)
- 井戸層がInを含む窒化物で構成された量子井戸構造を有する活性層をp型窒化物半導体層とn型窒化物半導体層とで挟む構造を備えた窒化物半導体発光素子において、
前記活性層のp側に最も近い位置に配置された井戸層と前記p型窒化物半導体層との間に形成された中間半導体層はアンドープInGaN層を含み、前記中間半導体層の膜厚は20nm以下であることを特徴とする窒化物半導体発光素子。 - 前記中間半導体層は、アンドープInGaN層のみによって構成されていることを特徴とする請求項1記載の窒化物半導体発光素子。
- 前記アンドープInGaN層のIn組成比率は2.5%以下であることを特徴とする請求項2記載の窒化物半導体発光素子。
- 前記中間半導体層は、前記活性層の障壁層とアンドープInGaN層とで構成されていることを特徴とする請求項1記載の窒化物半導体発光素子。
- 前記アンドープInGaN層は、In組成が前記p型窒化物半導体層に向かって減少していくIn組成傾斜層であることを特徴とする請求項4記載の窒化物半導体発光素子。
- 前記In組成傾斜層のIn傾斜は前記p型窒化物半導体層を形成する成長温度に達するまでの温度上昇過程によって形成されることを特徴とする請求項5記載の窒化物半導体発光素子。
- 前記p型窒化物半導体層の一部としてp電極と接触するp型コンタクト層が形成されており、前記p型コンタクト層はMgドープInGaN又はMgドープGaNで構成されていることを特徴とする請求項1〜請求項6のいずれか1項に記載の窒化物半導体発光素子。
- 前記アンドープInGaN層とp型コンタクト層との間には、前記p型窒化物半導体層の一部としてMgがドープされたp型AlxGaN(0.02≦x≦0.15)が形成されていることを特徴とする請求項7に記載の窒化物半導体発光素子。
- 前記p型AlxGaN(0.02≦x≦0.15)のホールキャリア濃度は、2×1017cm−3以上の範囲であることを特徴とする請求項8に記載の窒化物半導体発光素子。
- 前記p型AlxGaN(0.02≦x≦0.15)は、温度1000℃以上で成長させることを特徴とする請求項8又は請求項9のいずれか1項に記載の窒化物半導体発光素子。
- 前記井戸層のIn組成比率は10%以上であって、前記活性層のp側に最も近い位置に配置された井戸層成膜終了から前記p型窒化物半導体層の成膜終了までの間に、成長温度が950℃以上となる時間の合計が30分以内であることを特徴とする請求項1〜請求項10のいずれか1項に記載の窒化物半導体発光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/310546 WO2007138657A1 (ja) | 2006-05-26 | 2006-05-26 | 窒化物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007138657A1 true JPWO2007138657A1 (ja) | 2009-10-01 |
JP5087540B2 JP5087540B2 (ja) | 2012-12-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008517721A Expired - Fee Related JP5087540B2 (ja) | 2006-05-26 | 2006-05-26 | 窒化物半導体発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100065812A1 (ja) |
EP (1) | EP2034525A1 (ja) |
JP (1) | JP5087540B2 (ja) |
CN (1) | CN101449394A (ja) |
WO (1) | WO2007138657A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008235606A (ja) * | 2007-03-20 | 2008-10-02 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、バックライト、表示装置、電子機器および発光装置 |
US7928448B2 (en) | 2007-12-04 | 2011-04-19 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device including porous semiconductor layer |
KR101549811B1 (ko) | 2009-01-09 | 2015-09-04 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
US8586963B2 (en) | 2009-12-08 | 2013-11-19 | Lehigh University | Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same |
US8525148B2 (en) | 2010-07-16 | 2013-09-03 | Micron Technology, Inc. | Solid state lighting devices without converter materials and associated methods of manufacturing |
US9343626B2 (en) | 2013-03-15 | 2016-05-17 | Soitec | Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures |
FR3004585B1 (fr) * | 2013-04-12 | 2017-12-29 | Soitec Silicon On Insulator | Structures semi-conductrices dotees de regions actives comprenant de l'ingan |
CN105051920A (zh) * | 2013-03-15 | 2015-11-11 | 索泰克公司 | 具有包含InGaN的有源区的半导体发光结构体及其制造方法 |
TWI593135B (zh) | 2013-03-15 | 2017-07-21 | 索泰克公司 | 具有含氮化銦鎵之主動區域之半導體結構,形成此等半導體結構之方法,以及應用此等半導體結構形成之發光元件 |
FR3003397B1 (fr) | 2013-03-15 | 2016-07-22 | Soitec Silicon On Insulator | Structures semi-conductrices dotées de régions actives comprenant de l'INGAN |
CN104701432A (zh) * | 2015-03-20 | 2015-06-10 | 映瑞光电科技(上海)有限公司 | GaN 基LED 外延结构及其制备方法 |
JP2016195166A (ja) * | 2015-03-31 | 2016-11-17 | ウシオ電機株式会社 | 半導体発光素子及びその製造方法 |
CN105428448B (zh) * | 2015-09-29 | 2018-06-08 | 北京大学 | 一种双组分渐变结构太阳能电池及其制备方法 |
JP6669095B2 (ja) * | 2017-02-06 | 2020-03-18 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
CN113097359B (zh) * | 2021-03-29 | 2022-08-26 | 厦门士兰明镓化合物半导体有限公司 | 半导体发光元件 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3679914B2 (ja) * | 1997-02-12 | 2005-08-03 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP3420028B2 (ja) * | 1997-07-29 | 2003-06-23 | 株式会社東芝 | GaN系化合物半導体素子の製造方法 |
JP2000286448A (ja) * | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2001077413A (ja) * | 1999-09-06 | 2001-03-23 | Showa Denko Kk | Iii族窒化物半導体発光素子およびその製造方法 |
JP3864735B2 (ja) * | 2000-12-28 | 2007-01-10 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
JP4388720B2 (ja) * | 2001-10-12 | 2009-12-24 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
US7485902B2 (en) * | 2002-09-18 | 2009-02-03 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
JP4162560B2 (ja) * | 2002-09-18 | 2008-10-08 | 三洋電機株式会社 | 窒化物系半導体発光素子 |
US6995389B2 (en) * | 2003-06-18 | 2006-02-07 | Lumileds Lighting, U.S., Llc | Heterostructures for III-nitride light emitting devices |
JP5194334B2 (ja) * | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Iii族窒化物半導体デバイスの製造方法 |
JP2006108585A (ja) * | 2004-10-08 | 2006-04-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
-
2006
- 2006-05-26 CN CNA2006800547286A patent/CN101449394A/zh active Pending
- 2006-05-26 EP EP06756646A patent/EP2034525A1/en not_active Withdrawn
- 2006-05-26 US US12/227,693 patent/US20100065812A1/en not_active Abandoned
- 2006-05-26 JP JP2008517721A patent/JP5087540B2/ja not_active Expired - Fee Related
- 2006-05-26 WO PCT/JP2006/310546 patent/WO2007138657A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2007138657A1 (ja) | 2007-12-06 |
CN101449394A (zh) | 2009-06-03 |
EP2034525A1 (en) | 2009-03-11 |
JP5087540B2 (ja) | 2012-12-05 |
US20100065812A1 (en) | 2010-03-18 |
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