FR3004585B1 - Structures semi-conductrices dotees de regions actives comprenant de l'ingan - Google Patents
Structures semi-conductrices dotees de regions actives comprenant de l'inganInfo
- Publication number
- FR3004585B1 FR3004585B1 FR1300923A FR1300923A FR3004585B1 FR 3004585 B1 FR3004585 B1 FR 3004585B1 FR 1300923 A FR1300923 A FR 1300923A FR 1300923 A FR1300923 A FR 1300923A FR 3004585 B1 FR3004585 B1 FR 3004585B1
- Authority
- FR
- France
- Prior art keywords
- ingan
- active regions
- semiconductor structures
- semiconductor
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Priority Applications (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1300923A FR3004585B1 (fr) | 2013-04-12 | 2013-04-12 | Structures semi-conductrices dotees de regions actives comprenant de l'ingan |
TW103109798A TWI626765B (zh) | 2013-03-15 | 2014-03-14 | 具有包含InGaN之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置 |
JP2015562260A JP2016513879A (ja) | 2013-03-15 | 2014-03-17 | InGaNを含んでいる活性領域を有している半導体発光構造及びその製造の方法 |
PCT/EP2014/055314 WO2014140370A1 (fr) | 2013-03-15 | 2014-03-17 | Structure électroluminescente semi-conductrice ayant une région active comprenant ingan, et son procédé de fabrication |
DE112014001423.0T DE112014001423T5 (de) | 2013-03-15 | 2014-03-17 | Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen |
CN201480015148.0A CN105051921A (zh) | 2013-03-15 | 2014-03-17 | 具有包含InGaN的有源区的发光二极管半导体结构体 |
CN201480015241.1A CN105051920A (zh) | 2013-03-15 | 2014-03-17 | 具有包含InGaN的有源区的半导体发光结构体及其制造方法 |
KR1020157026743A KR20150132204A (ko) | 2013-03-15 | 2014-03-17 | InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치 |
DE112014001385.4T DE112014001385T5 (de) | 2013-03-15 | 2014-03-17 | Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung |
PCT/EP2014/055318 WO2014140372A1 (fr) | 2013-03-15 | 2014-03-17 | Structures semi-conductrices de diodes électroluminescentes ayant des régions actives comprenant de l'ingan |
PCT/EP2014/055316 WO2014140371A1 (fr) | 2013-03-15 | 2014-03-17 | Structures de semi-conducteur ayant des régions actives comprenant de l'ingan, procédés de formation de telles structures de semi-conducteur, et dispositifs électroluminescents formés à partir de telles structures de semi-conducteur |
CN201480014065.XA CN105051918A (zh) | 2013-03-15 | 2014-03-17 | 具有包含InGaN的有源区的半导体结构体、形成此类半导体结构体的方法以及由此类半导体结构体形成的发光器件 |
KR1020157026564A KR20150130331A (ko) | 2013-03-15 | 2014-03-17 | Ingan을 포함하는 활성 영역을 가지는 발광 다이오드 반도체 구조 |
KR1020157026427A KR102120682B1 (ko) | 2013-03-15 | 2014-03-17 | InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치 |
JP2015562261A JP2016517627A (ja) | 2013-03-15 | 2014-03-17 | InGaNを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス |
DE112014001352.8T DE112014001352T5 (de) | 2013-03-15 | 2014-03-17 | Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten |
JP2015562262A JP2016513880A (ja) | 2013-03-15 | 2014-03-17 | InGaNを含んでいる活性領域を有している発光ダイオード半導体構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1300923A FR3004585B1 (fr) | 2013-04-12 | 2013-04-12 | Structures semi-conductrices dotees de regions actives comprenant de l'ingan |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3004585A1 FR3004585A1 (fr) | 2014-10-17 |
FR3004585B1 true FR3004585B1 (fr) | 2017-12-29 |
Family
ID=48795609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1300923A Active FR3004585B1 (fr) | 2013-03-15 | 2013-04-12 | Structures semi-conductrices dotees de regions actives comprenant de l'ingan |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR3004585B1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3864735B2 (ja) * | 2000-12-28 | 2007-01-10 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
US7058105B2 (en) * | 2002-10-17 | 2006-06-06 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor optoelectronic device |
KR100670531B1 (ko) * | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100765004B1 (ko) * | 2004-12-23 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
EP1864337A4 (fr) * | 2005-03-24 | 2009-12-30 | Agency Science Tech & Res | Diode electroluminescente a lumiere blanche au nitrure de groupe iii |
CN101449394A (zh) * | 2006-05-26 | 2009-06-03 | 罗姆股份有限公司 | 氮化物半导体发光元件 |
-
2013
- 2013-04-12 FR FR1300923A patent/FR3004585B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR3004585A1 (fr) | 2014-10-17 |
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