FR3003396B1 - Structures semi-conductrices dotees de regions actives comprenant de l'ingan - Google Patents

Structures semi-conductrices dotees de regions actives comprenant de l'ingan

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Publication number
FR3003396B1
FR3003396B1 FR1300860A FR1300860A FR3003396B1 FR 3003396 B1 FR3003396 B1 FR 3003396B1 FR 1300860 A FR1300860 A FR 1300860A FR 1300860 A FR1300860 A FR 1300860A FR 3003396 B1 FR3003396 B1 FR 3003396B1
Authority
FR
France
Prior art keywords
ingan
active regions
semiconductor structures
semiconductor
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1300860A
Other languages
English (en)
Other versions
FR3003396A1 (fr
Inventor
Jean-Philippe Debray
Chantal Arena
Heather Mcfavilen
Ding Ding
Li Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to TW103107989A priority Critical patent/TWI593135B/zh
Priority to PCT/EP2014/055314 priority patent/WO2014140370A1/fr
Priority to JP2015562261A priority patent/JP2016517627A/ja
Priority to DE112014001352.8T priority patent/DE112014001352T5/de
Priority to CN201480015241.1A priority patent/CN105051920A/zh
Priority to CN201480014065.XA priority patent/CN105051918A/zh
Priority to KR1020157026564A priority patent/KR20150130331A/ko
Priority to DE112014001385.4T priority patent/DE112014001385T5/de
Priority to CN201480015148.0A priority patent/CN105051921A/zh
Priority to PCT/EP2014/055316 priority patent/WO2014140371A1/fr
Priority to KR1020157026427A priority patent/KR102120682B1/ko
Priority to DE112014001423.0T priority patent/DE112014001423T5/de
Priority to KR1020157026743A priority patent/KR20150132204A/ko
Priority to PCT/EP2014/055318 priority patent/WO2014140372A1/fr
Priority to JP2015562260A priority patent/JP2016513879A/ja
Priority to JP2015562262A priority patent/JP2016513880A/ja
Publication of FR3003396A1 publication Critical patent/FR3003396A1/fr
Application granted granted Critical
Publication of FR3003396B1 publication Critical patent/FR3003396B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FR1300860A 2013-03-15 2013-04-11 Structures semi-conductrices dotees de regions actives comprenant de l'ingan Active FR3003396B1 (fr)

Priority Applications (16)

Application Number Priority Date Filing Date Title
TW103107989A TWI593135B (zh) 2013-03-15 2014-03-07 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
KR1020157026427A KR102120682B1 (ko) 2013-03-15 2014-03-17 InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치
DE112014001352.8T DE112014001352T5 (de) 2013-03-15 2014-03-17 Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten
CN201480015241.1A CN105051920A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的半导体发光结构体及其制造方法
CN201480014065.XA CN105051918A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的半导体结构体、形成此类半导体结构体的方法以及由此类半导体结构体形成的发光器件
KR1020157026564A KR20150130331A (ko) 2013-03-15 2014-03-17 Ingan을 포함하는 활성 영역을 가지는 발광 다이오드 반도체 구조
DE112014001385.4T DE112014001385T5 (de) 2013-03-15 2014-03-17 Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung
CN201480015148.0A CN105051921A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的发光二极管半导体结构体
PCT/EP2014/055314 WO2014140370A1 (fr) 2013-03-15 2014-03-17 Structure électroluminescente semi-conductrice ayant une région active comprenant ingan, et son procédé de fabrication
JP2015562261A JP2016517627A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
DE112014001423.0T DE112014001423T5 (de) 2013-03-15 2014-03-17 Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen
KR1020157026743A KR20150132204A (ko) 2013-03-15 2014-03-17 InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치
PCT/EP2014/055318 WO2014140372A1 (fr) 2013-03-15 2014-03-17 Structures semi-conductrices de diodes électroluminescentes ayant des régions actives comprenant de l'ingan
JP2015562260A JP2016513879A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している半導体発光構造及びその製造の方法
JP2015562262A JP2016513880A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している発光ダイオード半導体構造
PCT/EP2014/055316 WO2014140371A1 (fr) 2013-03-15 2014-03-17 Structures de semi-conducteur ayant des régions actives comprenant de l'ingan, procédés de formation de telles structures de semi-conducteur, et dispositifs électroluminescents formés à partir de telles structures de semi-conducteur

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361788441P 2013-03-15 2013-03-15
US201361789792P 2013-03-15 2013-03-15
US201361790085P 2013-03-15 2013-03-15

Publications (2)

Publication Number Publication Date
FR3003396A1 FR3003396A1 (fr) 2014-09-19
FR3003396B1 true FR3003396B1 (fr) 2016-07-22

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FR1300823A Active FR3003397B1 (fr) 2013-03-15 2013-04-08 Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
FR1300860A Active FR3003396B1 (fr) 2013-03-15 2013-04-11 Structures semi-conductrices dotees de regions actives comprenant de l'ingan

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WO2011109754A1 (fr) * 2010-03-04 2011-09-09 The Regents Of The University Of California Dispositifs optoélectroniques semi-polaires à base de nitrure de groupe iii sur des substrats de plan m avec « miscuts » inférieurs à +/-15 degrés dans la direction c
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3003397B1 (fr) * 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
CN105047772B (zh) * 2015-06-08 2018-03-23 中国科学院半导体研究所 绿光led芯片外延层的结构及生长方法
TWI562403B (en) * 2015-11-12 2016-12-11 Playnitride Inc Semiconductor light-emitting device
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device
CN112186080B (zh) * 2020-09-30 2021-10-08 华灿光电(苏州）有限公司 发光二极管外延片的生长方法
CN112467004B (zh) * 2020-10-31 2022-06-07 扬州大学 一种包含电子存储层的GaN基LED外延结构及其生长方法

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US9397258B2 (en) 2016-07-19
US20140264265A1 (en) 2014-09-18
US20150333219A1 (en) 2015-11-19
FR3003397B1 (fr) 2016-07-22
US9117955B2 (en) 2015-08-25
FR3003397A1 (fr) 2014-09-19
FR3003396A1 (fr) 2014-09-19

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