JPWO2007086443A1 - 放熱材及びそれを用いた半導体装置 - Google Patents
放熱材及びそれを用いた半導体装置 Download PDFInfo
- Publication number
- JPWO2007086443A1 JPWO2007086443A1 JP2007555986A JP2007555986A JPWO2007086443A1 JP WO2007086443 A1 JPWO2007086443 A1 JP WO2007086443A1 JP 2007555986 A JP2007555986 A JP 2007555986A JP 2007555986 A JP2007555986 A JP 2007555986A JP WO2007086443 A1 JPWO2007086443 A1 JP WO2007086443A1
- Authority
- JP
- Japan
- Prior art keywords
- heat
- group
- weight
- parts
- addition reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 230000017525 heat dissipation Effects 0.000 title claims description 29
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 33
- 238000007259 addition reaction Methods 0.000 claims abstract description 32
- 230000035515 penetration Effects 0.000 claims abstract description 17
- 239000011231 conductive filler Substances 0.000 claims abstract description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000004519 grease Substances 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- 230000003197 catalytic effect Effects 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 description 22
- -1 dibromophenyl Chemical group 0.000 description 20
- 239000003921 oil Substances 0.000 description 13
- 239000000843 powder Substances 0.000 description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 7
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 4
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000002683 reaction inhibitor Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- HMVBQEAJQVQOTI-SOFGYWHQSA-N (e)-3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)\C=C(/C)C#C HMVBQEAJQVQOTI-SOFGYWHQSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 1
- 125000006039 1-hexenyl group Chemical group 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- SPLYFWRRAFIWQH-UHFFFAOYSA-N 2-methylhex-3-yn-2-ol Chemical compound CCC#CC(C)(C)O SPLYFWRRAFIWQH-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- QYXVDGZUXHFXTO-UHFFFAOYSA-L 3-oxobutanoate;platinum(2+) Chemical compound [Pt+2].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O QYXVDGZUXHFXTO-UHFFFAOYSA-L 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002199 base oil Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 125000005998 bromoethyl group Chemical group 0.000 description 1
- 125000004799 bromophenyl group Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 125000000068 chlorophenyl group Chemical group 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004966 cyanoalkyl group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 125000004212 difluorophenyl group Chemical group 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000001207 fluorophenyl group Chemical group 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002897 organic nitrogen compounds Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical group Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
(A)針入度(ASTM D1403、1/4コーン)が100以上である付加反応硬化型シリコーンゲル 100重量部
及び
(B)熱伝導性充填剤 500〜2000重量部
を含有することを特徴とする。
R1 aR2 bSiO[4−(a+b)]/2
で表されるものが用いられる。
R3 cHdSiO[4−(c+d)]/2
で示されるものが用いられる。
(A3)成分としては、ヒドロシリル化反応に用いられる周知の触媒を用いることができる。例えば白金黒、塩化第2白金、塩化白金酸、塩化白金酸と一価アルコールとの反応物、塩化白金酸とオレフィン類やビニルシロキサンとの錯体、白金ビスアセトアセテート等が挙げられる。
JIS K 2220に準拠し、測定した。
熱線法に従い、熱伝導率計(京都電子工業社製、QTM−500)を用いて測定した。
得られた放熱材を市販のろ紙上に0.1g秤量し、105℃のオーブンに放置した。1日後、10日後、20日後、30日後における放熱材の周辺で確認されたオイルブリードの長さをそれぞれ測定した。
(A1)粘度が0.7Pa・sであり分子鎖末端のみに位置するビニル基を平均1個有するポリジメチルシロキサン100重量部、(A2)粘度が0.015Pa・sであるトリメチルシリル基封鎖ジメチルシロキサン/メチルハイドロジェンシロキサン共重合体0.4重量部(SiH基含有量8.8mmol/g、(A2)のSiH/(A1)のSiVi=0.7)、(A3)塩化白金酸のビニルシロキサン錯体化合物(白金量1.8%)0.02重量部(白金量として4ppm)、3,5−ジメチル‐1−ヘキシン‐3‐オール0.02重量部、トリアリルイソシアヌレート0.2重量部を万能混錬器に添加し、均一に混合した。さらに150℃で1時間混合して、(A−1)付加反応硬化型シリコーンゲルを得た。得られた(A−1)付加反応硬化型シリコーンゲルは、ASTM D1403に準拠し1/4コーンを用いて測定した針入度が200であった。なお、回転粘度計(芝浦システム社製)では、粘度測定が不可能であった。
(A1)粘度が0.7Pa・sであり分子鎖末端のみに位置するビニル基を平均1個有するポリジメチルシロキサン100重量部、(A2)粘度が0.015Pa・sであるトリメチルシリル基封鎖ジメチルシロキサン/メチルハイドロジェンシロキサン共重合体0.6重量部(SiH基含有量8.8mmol/g、(A2)のSiH/(A1)のSiV=1.1)、(A3)塩化白金酸のビニルシロキサン錯体化合物(白金量1.8%)0.02重量部(白金量として4ppm)、3,5−ジメチル‐1−ヘキシン‐3‐オール0.02重量部、トリアリルイソシアヌレート0.2重量部を万能混錬器に添加し、均一に混合した。さらに150℃で1時間混合して、(A−2)付加反応硬化型シリコーンゲルを得た。得られた(A−2)付加反応硬化型シリコーンゲルは、ASTM D1403に準拠し1/4コーンを用いて測定した針入度が120であった。なお、回転粘度計(芝浦システム社製)では、粘度測定が不可能であった。
(A1)粘度が0.7Pa・sであり分子鎖末端のみに位置するビニル基を平均1個有するポリジメチルシロキサン100重量部、(A2)粘度が0.015Pa・sであるトリメチルシリル基封鎖ジメチルシロキサン/メチルハイドロジェンシロキサン共重合体0.7重量部(SiH基含有量8.8mmol/g、(A2)のSiH/(A1)のSiV=1.2)、(A3)塩化白金酸のビニルシロキサン錯体化合物(白金量1.8%)0.02重量部(白金量として4ppm)、3,5−ジメチル‐1−ヘキシン‐3‐オール0.02重量部、トリアリルイソシアヌレート0.2重量部を万能混錬器に添加し、均一に混合した。さらに150℃で1時間混合して、(A−3)付加反応硬化型シリコーンゲルを得た。得られた(A−3)付加反応硬化型シリコーンゲルは、ASTM D1403に準拠し1/4コーンを用いて測定した針入度が100であった。なお、回転粘度計(芝浦システム社製)では、粘度測定が不可能であった。
(A1)粘度が0.7Pa・sであり分子鎖末端のみに位置するビニル基を平均1個有するポリジメチルシロキサン100重量部、(A2)粘度が0.015Pa・sであるトリメチルシリル基封鎖ジメチルシロキサン/メチルハイドロジェンシロキサン共重合体0.9重量部(SiH基含有量8.8mmol/g、(A2)のSiH/(A1)のSiV=1.5)、(A3)塩化白金酸のビニルシロキサン錯体化合物(白金量1.8%)0.02重量部(白金量として4ppm)、3,5−ジメチル‐1−ヘキシン‐3‐オール0.02重量部、トリアリルイソシアヌレート0.2重量部を万能混錬器に添加し、均一に混合した。さらに150℃で1時間混合して、(A−4)付加反応硬化型シリコーンゲルを得た。得られた(A−4)付加反応硬化型シリコーンゲルは、ASTM D1403に準拠し1/4コーンを用いて測定した針入度が70であった。なお、回転粘度計(芝浦システム社製)では、粘度測定が不可能であった。
調整例1で得られた(A−1)付加反応硬化型シリコーンゲル100重量部を1Lの万能混錬器に移し、さらに(B−1)平均粒径14μmの酸化アルミニウム粉末262重量部、(B−2)平均粒径3μmの酸化アルミニウム粉末262重量部、(B−3)平均粒径0.5μmの酸化亜鉛粉末131重量部を加え、均一に混合して、放熱材を得た。
この放熱材の特性を測定し、結果を表1に示した。
調整例2で得られた(A−2)付加反応硬化型シリコーンゲル100重量部を1Lの万能混錬器に移し、さらに(B−1)平均粒径14μmの酸化アルミニウム粉末262重量部、(B−2)平均粒径3μmの酸化アルミニウム粉末262重量部、(B−3)平均粒子径0.5μmの酸化亜鉛粉末131重量部を加え、均一に混合して、放熱材を得た。
この放熱材の特性を測定し、結果を表1に示した。
調整例3で得られた(A−3)付加反応硬化型シリコーンゲル100重量部を1Lの万能混錬器に移し、さらに(B−1)平均粒径14μmの酸化アルミニウム粉末262重量部、(B−2)平均粒径3μmの酸化アルミニウム粉末262重量部、(B−3)平均粒径0.5μmの酸化亜鉛粉末131重量部を加え、均一に混合して、放熱材を得た。
この放熱材の特性を測定し、結果を表1に示した。
調整例4で得られた(A−4)付加反応硬化型シリコーンゲル100重量部を1Lの万能混錬器に移し、さらに(B−1)平均粒径14μmの酸化アルミニウム粉末200重量部、(B−2)平均粒径3μmの酸化アルミニウム粉末200重量部、(B−3)平均粒径0.5μmの酸化亜鉛粉末130重量部を加え、均一に混合して、放熱材を得た。
この放熱材の特性を測定し、結果を表1に示した。
(A−5)粘度が0.7Pa・s(針入度:測定不可能)のC10変性シリコーンオイル100重量部、(B−1)平均粒径14μmの酸化アルミニウム粉末320重量部、(B−2)平均粒径3μmの酸化アルミニウム粉末320重量部、(B−3)平均粒径0.5μmの酸化亜鉛粉末160重量部を1Lの万能混錬器に加え、均一に混合して、放熱材を得た。
この放熱材の特性を測定し、結果を表1に示した。
(A−5)粘度が0.7Pa・s(針入度:測定不可能)のC10変性シリコーンオイル100重量部、(B−1)平均粒径14μmの酸化アルミニウム粉末700重量部、(B−3)平均粒径0.5μmの酸化亜鉛粉末400重量部を1Lの万能混錬器に加え、均一に混合して、放熱材を得た。
この放熱材の特性を測定し、結果を表1に示した。
Claims (6)
- 発熱性電子部品と放熱体との間に介在される放熱材であって、
(A)針入度(ASTM D1403、1/4コーン)が100以上である付加反応硬化型シリコーンゲル 100重量部
及び
(B)熱伝導性充填剤 500〜2000重量部
を含有することを特徴とする放熱材。 - 前記(A)成分は、
(A1)1分子中にケイ素原子に結合したアルケニル基を平均0.1〜2個有するポリオルガノシロキサン 100重量部、
(A2)1分子中にケイ素原子に結合した水素原子を2個以上有するポリオルガノハイドロジェンシロキサン (A1)成分のケイ素原子結合アルケニル基1個に対して、ケイ素原子に結合した水素原子が0.3〜1.5個となる量、
及び
(A3)白金系触媒 触媒量
を含有する付加反応硬化型シリコーンゲル組成物を硬化してなることを特徴とする請求項1に記載の放熱材。 - 熱線法で測定した23℃における熱伝導率が、1.0W/(m・K)以上であることを特徴とする請求項1に記載の放熱材。
- 23℃における稠度が、200〜450であることを特徴とする請求項1に記載の放熱材。
- 放熱材が、グリース状であることを特徴とする請求項1に記載の放熱材。
- 発熱性電子部品と放熱体とを有し、前記発熱性電子部品と前記放熱体との間に請求項1に記載の放熱材を介在させてなることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007555986A JP4993611B2 (ja) | 2006-01-26 | 2007-01-25 | 放熱材及びそれを用いた半導体装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006018017 | 2006-01-26 | ||
JP2006018017 | 2006-01-26 | ||
PCT/JP2007/051132 WO2007086443A1 (ja) | 2006-01-26 | 2007-01-25 | 放熱材及びそれを用いた半導体装置 |
JP2007555986A JP4993611B2 (ja) | 2006-01-26 | 2007-01-25 | 放熱材及びそれを用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007086443A1 true JPWO2007086443A1 (ja) | 2009-06-18 |
JP4993611B2 JP4993611B2 (ja) | 2012-08-08 |
Family
ID=38309231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007555986A Active JP4993611B2 (ja) | 2006-01-26 | 2007-01-25 | 放熱材及びそれを用いた半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8187490B2 (ja) |
EP (1) | EP1983568B1 (ja) |
JP (1) | JP4993611B2 (ja) |
KR (1) | KR101357514B1 (ja) |
CN (1) | CN101375395B (ja) |
TW (1) | TWI462968B (ja) |
WO (1) | WO2007086443A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010153803A (ja) * | 2008-11-28 | 2010-07-08 | Toshiba Lighting & Technology Corp | 電子部品実装モジュール及び電気機器 |
CN102341459B (zh) * | 2009-03-12 | 2014-01-01 | 道康宁公司 | 热界面材料和它们的制备与使用方法 |
JP2011054806A (ja) * | 2009-09-02 | 2011-03-17 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
CN101864279A (zh) * | 2010-05-17 | 2010-10-20 | 盐城市赛瑞特半导体照明有限公司 | 用于led与散热装置间的饱和式超细填充剂 |
US8917510B2 (en) | 2011-01-14 | 2014-12-23 | International Business Machines Corporation | Reversibly adhesive thermal interface material |
US8511369B2 (en) | 2011-04-18 | 2013-08-20 | International Business Machines Corporation | Thermally reversible crosslinked polymer modified particles and methods for making the same |
CN102980584B (zh) | 2011-09-02 | 2017-12-19 | 深圳市大疆创新科技有限公司 | 一种无人飞行器惯性测量模块 |
KR20130026062A (ko) * | 2011-09-05 | 2013-03-13 | 삼성전자주식회사 | 인쇄회로기판 조립체 및 그 제조방법 |
EP2821456A4 (en) * | 2012-03-02 | 2015-12-16 | Fuji Polymer Ind | MASTIC TYPE THERMAL TRANSFER MATERIAL AND PROCESS FOR PRODUCING THE SAME |
US9085719B2 (en) | 2013-03-18 | 2015-07-21 | International Business Machines Corporation | Thermally reversible thermal interface materials with improved moisture resistance |
US20140284040A1 (en) * | 2013-03-22 | 2014-09-25 | International Business Machines Corporation | Heat spreading layer with high thermal conductivity |
US10510707B2 (en) | 2013-11-11 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive molding compound structure for heat dissipation in semiconductor packages |
US9960099B2 (en) * | 2013-11-11 | 2018-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive molding compound structure for heat dissipation in semiconductor packages |
US11229147B2 (en) | 2015-02-06 | 2022-01-18 | Laird Technologies, Inc. | Thermally-conductive electromagnetic interference (EMI) absorbers with silicon carbide |
WO2016161562A1 (en) * | 2015-04-07 | 2016-10-13 | SZ DJI Technology Co., Ltd. | System and method for providing a simple and reliable inertia measurement unit (imu) |
KR102544343B1 (ko) * | 2015-05-22 | 2023-06-19 | 모멘티브 파포만스 마테리아루즈 쟈판 고도가이샤 | 열전도성 조성물 |
EP3150672B1 (en) * | 2015-10-02 | 2018-05-09 | Shin-Etsu Chemical Co., Ltd. | Thermal conductive silicone composition and semiconductor device |
US10894883B2 (en) * | 2016-06-15 | 2021-01-19 | Momentive Performance Materials Japan Llc | Curable polyorganosiloxane composition and use thereof |
JP6625749B2 (ja) * | 2017-05-31 | 2019-12-25 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 熱伝導性ポリオルガノシロキサン組成物 |
JP6866877B2 (ja) * | 2018-05-31 | 2021-04-28 | 信越化学工業株式会社 | 低熱抵抗シリコーン組成物 |
JP6932872B1 (ja) | 2020-01-06 | 2021-09-08 | 富士高分子工業株式会社 | 熱伝導性シリコーンゲル組成物 |
DE102020112809A1 (de) * | 2020-05-12 | 2021-11-18 | Lisa Dräxlmaier GmbH | Kühlanordnung |
CN116568729A (zh) * | 2020-12-14 | 2023-08-08 | 美国陶氏有机硅公司 | 用于制备聚(二有机/有机氢)硅氧烷共聚物的方法 |
EP4301805A1 (en) | 2021-03-04 | 2024-01-10 | Momentive Performance Materials Inc. | Thermal gel composition |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3844992A (en) * | 1973-11-16 | 1974-10-29 | Dow Corning | Wood graining tool fast cure organopolysiloxane resins |
US4842911A (en) * | 1983-09-02 | 1989-06-27 | The Bergquist Company | Interfacing for heat sinks |
JPS63251466A (ja) * | 1987-04-06 | 1988-10-18 | Shin Etsu Chem Co Ltd | 熱伝導性液状シリコ−ンゴム組成物 |
US4852646A (en) * | 1987-06-16 | 1989-08-01 | Raychem Corporation | Thermally conductive gel materials |
US4801642A (en) * | 1987-12-28 | 1989-01-31 | Dow Corning Corporation | Thermally stable organosiloxane compositions and method for preparing same |
JPH0297559A (ja) * | 1988-10-03 | 1990-04-10 | Toshiba Silicone Co Ltd | 熱伝導性シリコーン組成物 |
JPH0619027B2 (ja) * | 1989-02-13 | 1994-03-16 | 信越化学工業株式会社 | 熱伝導性シリコーンオイルコンパウンド |
CA2043464C (en) | 1990-08-02 | 2001-01-30 | James J. Silva | Reagent containment and delivery tray |
US5186849A (en) * | 1990-11-30 | 1993-02-16 | Toshiba Silicone Ltd. | Silicone grease composition |
JP2691823B2 (ja) * | 1991-01-24 | 1997-12-17 | 信越化学工業株式会社 | 硬化性シリコーン組成物およびその硬化物 |
TW218887B (ja) * | 1991-01-24 | 1994-01-11 | Shinetsu Chem Ind Co | |
JP3541390B2 (ja) * | 1991-02-22 | 2004-07-07 | 東レ・ダウコーニング・シリコーン株式会社 | グリース状シリコーン組成物およびその製造方法 |
JP2623380B2 (ja) * | 1991-06-03 | 1997-06-25 | 信越化学工業株式会社 | 熱伝導性に優れたシリコーン組成物 |
JPH07268219A (ja) * | 1994-03-31 | 1995-10-17 | Toray Dow Corning Silicone Co Ltd | 光学充填用シリコーンゲル組成物 |
JPH08225743A (ja) * | 1995-02-20 | 1996-09-03 | Toray Dow Corning Silicone Co Ltd | シリコーンゲル組成物 |
IT1288292B1 (it) * | 1996-07-30 | 1998-09-11 | Zhermack Spa | Composto siliconico reticolabile stabile allo stoccaggio. |
US5929138A (en) * | 1996-11-05 | 1999-07-27 | Raychem Corporation | Highly thermally conductive yet highly comformable alumina filled composition and method of making the same |
JP3697645B2 (ja) | 1996-12-25 | 2005-09-21 | 株式会社ジェルテック | 熱伝導ゲル |
JPH10287811A (ja) * | 1997-02-12 | 1998-10-27 | Toray Dow Corning Silicone Co Ltd | 硬化性シリコーン組成物 |
JP3576741B2 (ja) * | 1997-03-06 | 2004-10-13 | 東レ・ダウコーニング・シリコーン株式会社 | シリコーン硬化物の難燃性を向上させる方法 |
JP3676544B2 (ja) * | 1997-08-05 | 2005-07-27 | ジーイー東芝シリコーン株式会社 | 難燃性放熱性シート用シリコーンゲル組成物および難燃性放熱性シリコーンシート |
US6114429A (en) * | 1997-08-06 | 2000-09-05 | Shin-Etsu Chemical Co., Ltd. | Thermally conductive silicone composition |
JPH11140322A (ja) | 1997-11-13 | 1999-05-25 | Toshiba Silicone Co Ltd | 難燃性シリコーンゲル組成物 |
JP3558527B2 (ja) * | 1998-07-06 | 2004-08-25 | 信越化学工業株式会社 | シリコーンゲルシート、組成物およびその製法 |
JP3948642B2 (ja) * | 1998-08-21 | 2007-07-25 | 信越化学工業株式会社 | 熱伝導性グリース組成物及びそれを使用した半導体装置 |
JP2000109373A (ja) * | 1998-10-02 | 2000-04-18 | Shin Etsu Chem Co Ltd | 放熱用シリコーングリース組成物及びそれを使用した半導体装置 |
JP2000169873A (ja) * | 1998-12-02 | 2000-06-20 | Shin Etsu Chem Co Ltd | シリコーングリース組成物 |
JP3543663B2 (ja) * | 1999-03-11 | 2004-07-14 | 信越化学工業株式会社 | 熱伝導性シリコーンゴム組成物及びその製造方法 |
US6531771B1 (en) * | 1999-04-20 | 2003-03-11 | Tyco Electronics Corporation | Dissipation of heat from a circuit board having bare silicon chips mounted thereon |
JP4727017B2 (ja) * | 1999-11-15 | 2011-07-20 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーンゴム組成物 |
KR100786747B1 (ko) * | 2001-03-09 | 2007-12-18 | 다우 코닝 도레이 캄파니 리미티드 | 그리스상 실리콘 조성물 |
JP4796704B2 (ja) | 2001-03-30 | 2011-10-19 | 株式会社タイカ | 押出可能な架橋済グリース状放熱材を充填・封入した容器の製法 |
US20040094293A1 (en) * | 2001-04-23 | 2004-05-20 | Kunihiko Mita | Heat radiating member |
JP3807995B2 (ja) * | 2002-03-05 | 2006-08-09 | ポリマテック株式会社 | 熱伝導性シート |
JP4130091B2 (ja) | 2002-04-10 | 2008-08-06 | 信越化学工業株式会社 | 放熱用シリコーングリース組成物 |
JP2004176016A (ja) * | 2002-11-29 | 2004-06-24 | Shin Etsu Chem Co Ltd | 熱伝導性シリコーン組成物及びその成形体 |
JP4646496B2 (ja) * | 2003-02-13 | 2011-03-09 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーン組成物 |
JP3838994B2 (ja) | 2003-06-04 | 2006-10-25 | 電気化学工業株式会社 | 放熱部材 |
JP3925805B2 (ja) * | 2003-08-25 | 2007-06-06 | 信越化学工業株式会社 | 放熱部材 |
JP2005206761A (ja) | 2004-01-26 | 2005-08-04 | Ge Toshiba Silicones Co Ltd | 耐熱性シリコーン組成物 |
JP2006328164A (ja) * | 2005-05-25 | 2006-12-07 | Shin Etsu Chem Co Ltd | 熱伝導性シリコーン組成物 |
-
2007
- 2007-01-25 CN CN2007800033893A patent/CN101375395B/zh active Active
- 2007-01-25 KR KR1020087017603A patent/KR101357514B1/ko active IP Right Grant
- 2007-01-25 JP JP2007555986A patent/JP4993611B2/ja active Active
- 2007-01-25 US US12/161,659 patent/US8187490B2/en active Active
- 2007-01-25 EP EP07707379.9A patent/EP1983568B1/en active Active
- 2007-01-25 WO PCT/JP2007/051132 patent/WO2007086443A1/ja active Search and Examination
- 2007-01-26 TW TW096103010A patent/TWI462968B/zh active
-
2011
- 2011-09-22 US US13/240,695 patent/US8221645B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8221645B2 (en) | 2012-07-17 |
JP4993611B2 (ja) | 2012-08-08 |
TW200738826A (en) | 2007-10-16 |
WO2007086443A1 (ja) | 2007-08-02 |
EP1983568B1 (en) | 2014-07-16 |
TWI462968B (zh) | 2014-12-01 |
US8187490B2 (en) | 2012-05-29 |
KR20080093997A (ko) | 2008-10-22 |
EP1983568A4 (en) | 2012-03-21 |
US20100220446A1 (en) | 2010-09-02 |
CN101375395A (zh) | 2009-02-25 |
EP1983568A1 (en) | 2008-10-22 |
US20120007017A1 (en) | 2012-01-12 |
KR101357514B1 (ko) | 2014-02-03 |
CN101375395B (zh) | 2012-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4993611B2 (ja) | 放熱材及びそれを用いた半導体装置 | |
JP4987496B2 (ja) | 放熱材の製造方法 | |
JP5233325B2 (ja) | 熱伝導性硬化物及びその製造方法 | |
JP2008038137A (ja) | 熱伝導性シリコーングリース組成物およびその硬化物 | |
JP2009138036A (ja) | 熱伝導性シリコーングリース組成物 | |
JP5472055B2 (ja) | 熱伝導性シリコーングリース組成物 | |
JP5155033B2 (ja) | 熱伝導性シリコーン組成物 | |
TWI821238B (zh) | 聚矽氧組成物 | |
JP2009203373A (ja) | 熱伝導性シリコーン組成物 | |
TW201905054A (zh) | 熱傳導性聚有機矽氧烷組成物 | |
JP2016125001A (ja) | 熱伝導性シリコーン組成物及び硬化物並びに複合シート | |
JP2009149736A (ja) | 熱伝導性シリコーンゲル組成物 | |
TW201943768A (zh) | 熱傳導性矽酮組成物及其硬化物 | |
KR20210098991A (ko) | 열전도성 실리콘 조성물의 경화물 | |
JP4993555B2 (ja) | 付加反応硬化型シリコーン組成物 | |
WO2018025502A1 (ja) | 熱伝導性シリコーン組成物 | |
JP2018053260A (ja) | 熱伝導性シリコーン組成物及び硬化物並びに複合シート | |
JP5047505B2 (ja) | 放熱性に優れる電子装置およびその製造方法 | |
JP7467017B2 (ja) | 熱伝導性シリコーン組成物及びその硬化物 | |
TWI796457B (zh) | 矽酮組成物 | |
JP2021185215A (ja) | 熱伝導性付加硬化型シリコーン組成物 | |
JP7485634B2 (ja) | 熱伝導性シリコーン組成物及びその硬化物 | |
TW202208552A (zh) | 導熱性加成硬化型矽酮組合物及其硬化物 | |
WO2024048335A1 (ja) | 熱伝導性シリコーン組成物 | |
WO2023132192A1 (ja) | 高熱伝導性シリコーン組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101208 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120501 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120502 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150518 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4993611 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |