JPS6381855A - ヘテロ接合バイポ−ラトランジスタの製造方法 - Google Patents

ヘテロ接合バイポ−ラトランジスタの製造方法

Info

Publication number
JPS6381855A
JPS6381855A JP61228724A JP22872486A JPS6381855A JP S6381855 A JPS6381855 A JP S6381855A JP 61228724 A JP61228724 A JP 61228724A JP 22872486 A JP22872486 A JP 22872486A JP S6381855 A JPS6381855 A JP S6381855A
Authority
JP
Japan
Prior art keywords
layer
base layer
semi
external base
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61228724A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571173B2 (enExample
Inventor
Yasutomo Kajikawa
靖友 梶川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61228724A priority Critical patent/JPS6381855A/ja
Priority to US07/097,165 priority patent/US4789643A/en
Publication of JPS6381855A publication Critical patent/JPS6381855A/ja
Priority to US07/235,277 priority patent/US4896203A/en
Publication of JPH0571173B2 publication Critical patent/JPH0571173B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Bipolar Transistors (AREA)
JP61228724A 1986-09-25 1986-09-25 ヘテロ接合バイポ−ラトランジスタの製造方法 Granted JPS6381855A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61228724A JPS6381855A (ja) 1986-09-25 1986-09-25 ヘテロ接合バイポ−ラトランジスタの製造方法
US07/097,165 US4789643A (en) 1986-09-25 1987-09-16 Method of manufacturing a heterojunction bipolar transistor involving etch and refill
US07/235,277 US4896203A (en) 1986-09-25 1988-08-23 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61228724A JPS6381855A (ja) 1986-09-25 1986-09-25 ヘテロ接合バイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6381855A true JPS6381855A (ja) 1988-04-12
JPH0571173B2 JPH0571173B2 (enExample) 1993-10-06

Family

ID=16880820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61228724A Granted JPS6381855A (ja) 1986-09-25 1986-09-25 ヘテロ接合バイポ−ラトランジスタの製造方法

Country Status (2)

Country Link
US (2) US4789643A (enExample)
JP (1) JPS6381855A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289863A (ja) * 1987-05-21 1988-11-28 Sony Corp バイポ−ラトランジスタおよびその製造方法
JPH06318604A (ja) * 1993-04-22 1994-11-15 Nec Corp シリコンバイポーラ型半導体装置とその製造方法

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US4728624A (en) * 1985-10-31 1988-03-01 International Business Machines Corporation Selective epitaxial growth structure and isolation
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
EP0312401B1 (en) * 1987-10-15 1993-12-15 Kabushiki Kaisha Toshiba Semiconductor devices and method of manufacturing the same
FR2629637B1 (fr) * 1988-04-05 1990-11-16 Thomson Csf Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant
FR2645345A1 (fr) * 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
US4914049A (en) * 1989-10-16 1990-04-03 Motorola, Inc. Method of fabricating a heterojunction bipolar transistor
US5017990A (en) * 1989-12-01 1991-05-21 International Business Machines Corporation Raised base bipolar transistor structure and its method of fabrication
US5053346A (en) * 1990-01-12 1991-10-01 Texas Instruments Incorporated Method for making a high speed gallium arsenide transistor
JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
US5242843A (en) * 1992-10-28 1993-09-07 Allied-Signal Inc. Method for making a heterojunction bipolar transistor with improved high frequency response
US5365089A (en) * 1992-12-23 1994-11-15 International Business Machines Corporation Double heterojunction bipolar transistor and the method of manufacture therefor
US5288660A (en) * 1993-02-01 1994-02-22 Avantek, Inc. Method for forming self-aligned t-shaped transistor electrode
JP2767676B2 (ja) * 1993-03-19 1998-06-18 松下電器産業株式会社 化合物半導体の微細構造形成方法
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
KR100197001B1 (ko) * 1996-05-02 1999-07-01 구본준 바이폴라소자 및 그 제조방법
KR100388489B1 (ko) * 2001-09-28 2003-06-25 한국전자통신연구원 이종접합 쌍극자 트랜지스터 및 그의 제조방법
TW200305283A (en) * 2001-12-06 2003-10-16 Hrl Lab Llc High power-low noise microwave GaN heterojunction field effet transistor
US7494887B1 (en) * 2004-08-17 2009-02-24 Hrl Laboratories, Llc Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
EP1911086A2 (en) 2005-07-26 2008-04-16 Amberwave Systems Corporation Solutions integrated circuit integration of alternative active area materials
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR101093588B1 (ko) 2007-09-07 2011-12-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 멀티-정션 솔라 셀
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
JP2019054120A (ja) * 2017-09-15 2019-04-04 株式会社村田製作所 バイポーラトランジスタ及び高周波パワーアンプモジュール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor
US3762966A (en) * 1968-09-18 1973-10-02 Gen Electric Method of fabricating high emitter efficiency semiconductor device with low base resistance by selective diffusion of base impurities
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
DE3409404A1 (de) * 1983-11-30 1985-09-26 Dr. Alois Stankiewicz GmbH, 3101 Adelheidsdorf Radlaufteil
JPS59217364A (ja) * 1983-05-26 1984-12-07 Sony Corp 半導体装置の製法
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact
US4644381A (en) * 1985-04-08 1987-02-17 Siemens Corporate Research & Support, Inc. I2 L heterostructure bipolar transistors and method of making the same
DE3682959D1 (de) * 1985-06-21 1992-01-30 Matsushita Electric Industrial Co Ltd Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.
US4716445A (en) * 1986-01-17 1987-12-29 Nec Corporation Heterojunction bipolar transistor having a base region of germanium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289863A (ja) * 1987-05-21 1988-11-28 Sony Corp バイポ−ラトランジスタおよびその製造方法
JPH06318604A (ja) * 1993-04-22 1994-11-15 Nec Corp シリコンバイポーラ型半導体装置とその製造方法

Also Published As

Publication number Publication date
US4789643A (en) 1988-12-06
US4896203A (en) 1990-01-23
JPH0571173B2 (enExample) 1993-10-06

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