JPS6325708B2 - - Google Patents

Info

Publication number
JPS6325708B2
JPS6325708B2 JP57216508A JP21650882A JPS6325708B2 JP S6325708 B2 JPS6325708 B2 JP S6325708B2 JP 57216508 A JP57216508 A JP 57216508A JP 21650882 A JP21650882 A JP 21650882A JP S6325708 B2 JPS6325708 B2 JP S6325708B2
Authority
JP
Japan
Prior art keywords
oxide film
silicon oxide
silicon
silicon nitride
isolation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57216508A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59106133A (ja
Inventor
Koji Yamazaki
Kunyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP21650882A priority Critical patent/JPS59106133A/ja
Publication of JPS59106133A publication Critical patent/JPS59106133A/ja
Publication of JPS6325708B2 publication Critical patent/JPS6325708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP21650882A 1982-12-09 1982-12-09 集積回路装置 Granted JPS59106133A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21650882A JPS59106133A (ja) 1982-12-09 1982-12-09 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21650882A JPS59106133A (ja) 1982-12-09 1982-12-09 集積回路装置

Publications (2)

Publication Number Publication Date
JPS59106133A JPS59106133A (ja) 1984-06-19
JPS6325708B2 true JPS6325708B2 (enrdf_load_stackoverflow) 1988-05-26

Family

ID=16689521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21650882A Granted JPS59106133A (ja) 1982-12-09 1982-12-09 集積回路装置

Country Status (1)

Country Link
JP (1) JPS59106133A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618945A (ja) * 1984-06-25 1986-01-16 Nec Corp 半導体集積回路装置
JPS6190442A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置及びその製造方法
JPH0695550B2 (ja) * 1985-04-09 1994-11-24 日本電気株式会社 半導体装置
JPS6249643A (ja) * 1985-04-19 1987-03-04 Nec Corp 半導体装置およびその製造方法
US4725562A (en) * 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
US5148257A (en) * 1989-12-20 1992-09-15 Nec Corporation Semiconductor device having u-groove
JPH0574927A (ja) * 1991-09-13 1993-03-26 Nec Corp 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160050A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5712533A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device
JPS57113248A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of semiconductor device
JPS57180146A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Formation of elements isolation region

Also Published As

Publication number Publication date
JPS59106133A (ja) 1984-06-19

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