JPS6236390B2 - - Google Patents

Info

Publication number
JPS6236390B2
JPS6236390B2 JP2540282A JP2540282A JPS6236390B2 JP S6236390 B2 JPS6236390 B2 JP S6236390B2 JP 2540282 A JP2540282 A JP 2540282A JP 2540282 A JP2540282 A JP 2540282A JP S6236390 B2 JPS6236390 B2 JP S6236390B2
Authority
JP
Japan
Prior art keywords
silicon oxide
oxide film
film
silicon
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2540282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58141538A (ja
Inventor
Kunyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2540282A priority Critical patent/JPS58141538A/ja
Publication of JPS58141538A publication Critical patent/JPS58141538A/ja
Publication of JPS6236390B2 publication Critical patent/JPS6236390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP2540282A 1982-02-18 1982-02-18 集積回路装置 Granted JPS58141538A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2540282A JPS58141538A (ja) 1982-02-18 1982-02-18 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2540282A JPS58141538A (ja) 1982-02-18 1982-02-18 集積回路装置

Publications (2)

Publication Number Publication Date
JPS58141538A JPS58141538A (ja) 1983-08-22
JPS6236390B2 true JPS6236390B2 (enrdf_load_stackoverflow) 1987-08-06

Family

ID=12164906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2540282A Granted JPS58141538A (ja) 1982-02-18 1982-02-18 集積回路装置

Country Status (1)

Country Link
JP (1) JPS58141538A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290073A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Works Ltd 絶縁分離構造の形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290073A (ja) * 2006-04-25 2007-11-08 Matsushita Electric Works Ltd 絶縁分離構造の形成方法

Also Published As

Publication number Publication date
JPS58141538A (ja) 1983-08-22

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