JPS59106133A - 集積回路装置 - Google Patents
集積回路装置Info
- Publication number
- JPS59106133A JPS59106133A JP21650882A JP21650882A JPS59106133A JP S59106133 A JPS59106133 A JP S59106133A JP 21650882 A JP21650882 A JP 21650882A JP 21650882 A JP21650882 A JP 21650882A JP S59106133 A JPS59106133 A JP S59106133A
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- silicon
- groove
- integrated circuit
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 10
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000012530 fluid Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 206010011732 Cyst Diseases 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 208000031513 cyst Diseases 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21650882A JPS59106133A (ja) | 1982-12-09 | 1982-12-09 | 集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21650882A JPS59106133A (ja) | 1982-12-09 | 1982-12-09 | 集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59106133A true JPS59106133A (ja) | 1984-06-19 |
| JPS6325708B2 JPS6325708B2 (enrdf_load_stackoverflow) | 1988-05-26 |
Family
ID=16689521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21650882A Granted JPS59106133A (ja) | 1982-12-09 | 1982-12-09 | 集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59106133A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
| JPS6190442A (ja) * | 1984-10-09 | 1986-05-08 | Nec Corp | 半導体装置及びその製造方法 |
| JPS61232631A (ja) * | 1985-04-09 | 1986-10-16 | Nec Corp | 半導体装置 |
| JPS6249643A (ja) * | 1985-04-19 | 1987-03-04 | Nec Corp | 半導体装置およびその製造方法 |
| US4725562A (en) * | 1986-03-27 | 1988-02-16 | International Business Machines Corporation | Method of making a contact to a trench isolated device |
| US4952524A (en) * | 1989-05-05 | 1990-08-28 | At&T Bell Laboratories | Semiconductor device manufacture including trench formation |
| US5148257A (en) * | 1989-12-20 | 1992-09-15 | Nec Corporation | Semiconductor device having u-groove |
| US5229317A (en) * | 1991-09-13 | 1993-07-20 | Nec Corporation | Method for preventing out-diffusion of phosphorous and boron in a bpsg-buried trench |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56160050A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS5712533A (en) * | 1980-06-26 | 1982-01-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57113248A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57180146A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Formation of elements isolation region |
-
1982
- 1982-12-09 JP JP21650882A patent/JPS59106133A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56160050A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS5712533A (en) * | 1980-06-26 | 1982-01-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57113248A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57180146A (en) * | 1981-04-30 | 1982-11-06 | Fujitsu Ltd | Formation of elements isolation region |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
| JPS6190442A (ja) * | 1984-10-09 | 1986-05-08 | Nec Corp | 半導体装置及びその製造方法 |
| JPS61232631A (ja) * | 1985-04-09 | 1986-10-16 | Nec Corp | 半導体装置 |
| JPS6249643A (ja) * | 1985-04-19 | 1987-03-04 | Nec Corp | 半導体装置およびその製造方法 |
| US4725562A (en) * | 1986-03-27 | 1988-02-16 | International Business Machines Corporation | Method of making a contact to a trench isolated device |
| US4952524A (en) * | 1989-05-05 | 1990-08-28 | At&T Bell Laboratories | Semiconductor device manufacture including trench formation |
| US5148257A (en) * | 1989-12-20 | 1992-09-15 | Nec Corporation | Semiconductor device having u-groove |
| US5229317A (en) * | 1991-09-13 | 1993-07-20 | Nec Corporation | Method for preventing out-diffusion of phosphorous and boron in a bpsg-buried trench |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6325708B2 (enrdf_load_stackoverflow) | 1988-05-26 |
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