JPS6250472A - パルス化プラズマ装置及び方法 - Google Patents
パルス化プラズマ装置及び方法Info
- Publication number
- JPS6250472A JPS6250472A JP61152599A JP15259986A JPS6250472A JP S6250472 A JPS6250472 A JP S6250472A JP 61152599 A JP61152599 A JP 61152599A JP 15259986 A JP15259986 A JP 15259986A JP S6250472 A JPS6250472 A JP S6250472A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- reaction chamber
- substrate surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 29
- 239000007789 gas Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000000151 deposition Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 239000000376 reactant Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010494 dissociation reaction Methods 0.000 description 6
- 230000005593 dissociations Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- -1 chlorocarbonyl Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910001902 chlorine oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8516537 | 1985-06-29 | ||
| GB858516537A GB8516537D0 (en) | 1985-06-29 | 1985-06-29 | Pulsed plasma apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6250472A true JPS6250472A (ja) | 1987-03-05 |
| JPH0524231B2 JPH0524231B2 (enExample) | 1993-04-07 |
Family
ID=10581562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61152599A Granted JPS6250472A (ja) | 1985-06-29 | 1986-06-27 | パルス化プラズマ装置及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4935661A (enExample) |
| EP (1) | EP0207767B1 (enExample) |
| JP (1) | JPS6250472A (enExample) |
| DE (1) | DE3678048D1 (enExample) |
| GB (2) | GB8516537D0 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03134175A (ja) * | 1989-10-19 | 1991-06-07 | Res Dev Corp Of Japan | ディジタルｃｖｄ方法 |
| JPH05148654A (ja) * | 1991-11-28 | 1993-06-15 | Shinko Seiki Co Ltd | パルスプラズマｃｖｄによる成膜方法及びその装置 |
| JPH05214539A (ja) * | 1991-09-20 | 1993-08-24 | Balzers Ag | 基板の保護コーティング方法及びコーティング装置 |
| JP2001271170A (ja) * | 2000-03-27 | 2001-10-02 | Semiconductor Energy Lab Co Ltd | プラズマｃｖｄ装置とそのドライクリーニング方法 |
| JP2003502501A (ja) * | 1999-06-19 | 2003-01-21 | ゼニテックインコーポレイテッド | 化学蒸着反応炉及びこれを利用した薄膜形成方法 |
| JP2004072065A (ja) * | 2002-08-05 | 2004-03-04 | Hynix Semiconductor Inc | 半導体素子のコンデンサ製造方法 |
| JP2019516273A (ja) * | 2016-03-23 | 2019-06-13 | 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． | インピーダンス整合システム、インピーダンス整合方法および半導体処理装置 |
Families Citing this family (116)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3800712A1 (de) * | 1988-01-13 | 1989-07-27 | Philips Patentverwaltung | Verfahren zur plasmaaktivierten reaktiven abscheidung von elektrisch leitendem mehrkomponentenmaterial aus einer gasphase |
| DE3841730C2 (de) * | 1988-12-10 | 1997-06-19 | Widia Gmbh | Verfahren zum Beschichten eines metallischen Grundkörpers mit einem nichtleitenden Beschichtungsmaterial |
| DE3931713C1 (enExample) * | 1989-09-22 | 1991-03-14 | Balzers Ag, Balzers, Li | |
| US5227202A (en) * | 1989-09-22 | 1993-07-13 | Balzers Aktiengesellschaft | Method for chemical coating on opposite surfaces of workpieces |
| DE3933900A1 (de) * | 1989-10-11 | 1991-04-18 | Philips Patentverwaltung | Verfahren zur plasmaaktivierten reaktiven abscheidung von elektrisch leitendem mehrkomponentenmaterial aus einer gasphase |
| US5170098A (en) * | 1989-10-18 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus for use in carrying out the same |
| JP2687966B2 (ja) | 1990-08-20 | 1997-12-08 | 富士通株式会社 | 半導体装置の製造方法 |
| US5273609A (en) * | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
| KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
| US5305178A (en) * | 1991-08-12 | 1994-04-19 | The United States Of America As Represented By The Secretary Of The Army | Capacitor with increased electrical breakdown strength and method of forming the same |
| DE4127504A1 (de) * | 1991-08-20 | 1993-02-25 | Leybold Ag | Einrichtung zur unterdrueckung von lichtboegen |
| US5302882A (en) * | 1991-09-09 | 1994-04-12 | Sematech, Inc. | Low pass filter for plasma discharge |
| DE4137606C1 (enExample) * | 1991-11-15 | 1992-07-30 | Schott Glaswerke, 6500 Mainz, De | |
| US5175472A (en) * | 1991-12-30 | 1992-12-29 | Comdel, Inc. | Power monitor of RF plasma |
| US5523955A (en) * | 1992-03-19 | 1996-06-04 | Advanced Energy Industries, Inc. | System for characterizing AC properties of a processing plasma |
| US5325019A (en) * | 1992-08-21 | 1994-06-28 | Sematech, Inc. | Control of plasma process by use of harmonic frequency components of voltage and current |
| US5334423A (en) * | 1993-01-28 | 1994-08-02 | United Solar Systems Corp. | Microwave energized process for the preparation of high quality semiconductor material |
| US5344792A (en) * | 1993-03-04 | 1994-09-06 | Micron Technology, Inc. | Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2 |
| FR2708624A1 (fr) * | 1993-07-30 | 1995-02-10 | Neuville Stephane | Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié. |
| EP0753082B1 (de) * | 1994-03-29 | 1999-07-07 | Schott Glas | Pcvd-verfahren und vorrichtung zur beschichtung von gewölbten substraten |
| JPH0892765A (ja) * | 1994-09-22 | 1996-04-09 | Tokyo Electron Ltd | エッチング方法 |
| US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
| US6253704B1 (en) * | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
| US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
| US6030902A (en) * | 1996-02-16 | 2000-02-29 | Micron Technology Inc | Apparatus and method for improving uniformity in batch processing of semiconductor wafers |
| KR0183844B1 (ko) * | 1996-04-30 | 1999-05-15 | 김광호 | 알에프 발생 장치 및 이를 이용한 펄스 플라즈마 형성 방법 |
| US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
| US5849628A (en) | 1996-12-09 | 1998-12-15 | Micron Technology, Inc. | Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same |
| US6536449B1 (en) | 1997-11-17 | 2003-03-25 | Mattson Technology Inc. | Downstream surface cleaning process |
| US6294466B1 (en) | 1998-05-01 | 2001-09-25 | Applied Materials, Inc. | HDP-CVD apparatus and process for depositing titanium films for semiconductor devices |
| US6185839B1 (en) * | 1998-05-28 | 2001-02-13 | Applied Materials, Inc. | Semiconductor process chamber having improved gas distributor |
| US5985375A (en) * | 1998-09-03 | 1999-11-16 | Micron Technology, Inc. | Method for pulsed-plasma enhanced vapor deposition |
| US6263829B1 (en) | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
| DE19911046B4 (de) * | 1999-03-12 | 2006-10-26 | Robert Bosch Gmbh | Plasmaverfahren |
| KR100273473B1 (ko) * | 1999-04-06 | 2000-11-15 | 이경수 | 박막 형성 방법 |
| DE19933842A1 (de) | 1999-07-20 | 2001-02-01 | Bosch Gmbh Robert | Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas |
| KR100750420B1 (ko) | 1999-08-17 | 2007-08-21 | 동경 엘렉트론 주식회사 | 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터 |
| US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
| US6451390B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Deposition of TEOS oxide using pulsed RF plasma |
| EP2293322A1 (en) * | 2000-06-08 | 2011-03-09 | Genitech, Inc. | Method for forming a metal nitride layer |
| DE10029905A1 (de) * | 2000-06-17 | 2002-01-03 | Schott Auer Gmbh | Reflektor, insbesondere zur Anwendung bei einem Kraftfahrzeug |
| US6784108B1 (en) * | 2000-08-31 | 2004-08-31 | Micron Technology, Inc. | Gas pulsing for etch profile control |
| EP1421606A4 (en) * | 2001-08-06 | 2008-03-05 | Genitech Co Ltd | PLASMA ACTIVE ATOMIC LAYER (PEALD) DEPOSITION APPARATUS AND METHOD OF FORMING THIN FILM USING SAID APPARATUS |
| US6676760B2 (en) | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
| WO2003021002A1 (en) * | 2001-08-29 | 2003-03-13 | Tokyo Electron Limited | Apparatus and method for plasma processing |
| US9708707B2 (en) * | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
| JP4938962B2 (ja) * | 2001-09-14 | 2012-05-23 | エーエスエム インターナショナル エヌ．ヴェー． | ゲッタリング反応物を用いるａｌｄによる金属窒化物堆積 |
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| WO2003046959A1 (en) * | 2001-11-27 | 2003-06-05 | Tokyo Electron Limited | Plasma processing system |
| TWI278532B (en) * | 2002-06-23 | 2007-04-11 | Asml Us Inc | Method for energy-assisted atomic layer deposition and removal |
| US6924235B2 (en) * | 2002-08-16 | 2005-08-02 | Unaxis Usa Inc. | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
| US7511443B2 (en) * | 2002-09-26 | 2009-03-31 | Barrett Technology, Inc. | Ultra-compact, high-performance motor controller and method of using same |
| US9121098B2 (en) | 2003-02-04 | 2015-09-01 | Asm International N.V. | NanoLayer Deposition process for composite films |
| US7713592B2 (en) | 2003-02-04 | 2010-05-11 | Tegal Corporation | Nanolayer deposition process |
| US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
| JP4483231B2 (ja) * | 2003-08-27 | 2010-06-16 | ソニー株式会社 | 磁気メモリ装置の製造方法 |
| US7405143B2 (en) * | 2004-03-25 | 2008-07-29 | Asm International N.V. | Method for fabricating a seed layer |
| US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
| US20060045822A1 (en) | 2004-09-01 | 2006-03-02 | Board Of Regents, The University Of Texas System | Plasma polymerization for encapsulating particles |
| US20100297248A1 (en) * | 2004-09-01 | 2010-11-25 | Board Of Regents, The University Of Texas System | Encapsulated particles for amorphous stability enhancement |
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| WO2006039662A2 (en) * | 2004-09-30 | 2006-04-13 | Barrett Technology, Inc. | Ultra-compact, high performance motor controller and method of using same |
| US7427571B2 (en) * | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US7674726B2 (en) | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
| JP3984638B2 (ja) * | 2005-03-30 | 2007-10-03 | 松下電器産業株式会社 | 伝送線路対及び伝送線路群 |
| US8099059B2 (en) * | 2005-04-29 | 2012-01-17 | Koninklijke Philips Electronics N.V. | Method and circuit arrangement for operating multi-channel transmit/recieve antenna devices |
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| US7553516B2 (en) * | 2005-12-16 | 2009-06-30 | Asm International N.V. | System and method of reducing particle contamination of semiconductor substrates |
| CN101460659B (zh) * | 2006-06-02 | 2011-12-07 | 应用材料股份有限公司 | 利用压差测量的气流控制 |
| US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| US8268409B2 (en) * | 2006-10-25 | 2012-09-18 | Asm America, Inc. | Plasma-enhanced deposition of metal carbide films |
| US7611751B2 (en) | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
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| US7598170B2 (en) * | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
| US7595270B2 (en) * | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
| US7771606B2 (en) * | 2007-02-22 | 2010-08-10 | Applied Materials, Inc. | Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures |
| US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
| US7737042B2 (en) | 2007-02-22 | 2010-06-15 | Applied Materials, Inc. | Pulsed-plasma system for etching semiconductor structures |
| US7713874B2 (en) * | 2007-05-02 | 2010-05-11 | Asm America, Inc. | Periodic plasma annealing in an ALD-type process |
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| US20100330300A1 (en) * | 2008-01-30 | 2010-12-30 | Stowell Michael W | System and method for pre-ionization of surface wave launched plasma discharge sources |
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| US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898138A (ja) * | 1981-12-07 | 1983-06-10 | Hitachi Metals Ltd | 減圧ｃｖｄ装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2883580A (en) * | 1956-07-13 | 1959-04-21 | Wallace D Kilpatrick | Pulsed ion source |
| US3988566A (en) * | 1972-06-05 | 1976-10-26 | Metco Inc. | Automatic plasma flame spraying process and apparatus |
| US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
| DE3103177A1 (de) * | 1981-01-30 | 1982-08-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen |
| US4353777A (en) * | 1981-04-20 | 1982-10-12 | Lfe Corporation | Selective plasma polysilicon etching |
| GB2105729B (en) * | 1981-09-15 | 1985-06-12 | Itt Ind Ltd | Surface processing of a substrate material |
| JPS59175125A (ja) * | 1983-03-24 | 1984-10-03 | Toshiba Corp | ドライエツチング装置 |
| EP0154482B1 (en) * | 1984-03-03 | 1990-05-16 | Stc Plc | Coating process |
| US4645977A (en) * | 1984-08-31 | 1987-02-24 | Matsushita Electric Industrial Co., Ltd. | Plasma CVD apparatus and method for forming a diamond like carbon film |
| GB8431422D0 (en) * | 1984-12-13 | 1985-01-23 | Standard Telephones Cables Ltd | Plasma reactor vessel |
-
1985
- 1985-06-29 GB GB858516537A patent/GB8516537D0/en active Pending
-
1986
- 1986-06-26 US US06/879,039 patent/US4935661A/en not_active Expired - Lifetime
- 1986-06-27 DE DE8686305036T patent/DE3678048D1/de not_active Expired - Fee Related
- 1986-06-27 GB GB8615825A patent/GB2178062B/en not_active Expired - Fee Related
- 1986-06-27 JP JP61152599A patent/JPS6250472A/ja active Granted
- 1986-06-27 EP EP86305036A patent/EP0207767B1/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898138A (ja) * | 1981-12-07 | 1983-06-10 | Hitachi Metals Ltd | 減圧ｃｖｄ装置 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03134175A (ja) * | 1989-10-19 | 1991-06-07 | Res Dev Corp Of Japan | ディジタルｃｖｄ方法 |
| JPH05214539A (ja) * | 1991-09-20 | 1993-08-24 | Balzers Ag | 基板の保護コーティング方法及びコーティング装置 |
| JPH05148654A (ja) * | 1991-11-28 | 1993-06-15 | Shinko Seiki Co Ltd | パルスプラズマｃｖｄによる成膜方法及びその装置 |
| JP2003502501A (ja) * | 1999-06-19 | 2003-01-21 | ゼニテックインコーポレイテッド | 化学蒸着反応炉及びこれを利用した薄膜形成方法 |
| JP2001271170A (ja) * | 2000-03-27 | 2001-10-02 | Semiconductor Energy Lab Co Ltd | プラズマｃｖｄ装置とそのドライクリーニング方法 |
| JP2004072065A (ja) * | 2002-08-05 | 2004-03-04 | Hynix Semiconductor Inc | 半導体素子のコンデンサ製造方法 |
| JP2019516273A (ja) * | 2016-03-23 | 2019-06-13 | 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． | インピーダンス整合システム、インピーダンス整合方法および半導体処理装置 |
| US10699881B2 (en) | 2016-03-23 | 2020-06-30 | Beijing Naura Microelectronics Equipment Co., Ltd. | Impedance matching system, impedance matching method, and semiconductor processing apparatus thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8615825D0 (en) | 1986-08-06 |
| EP0207767A2 (en) | 1987-01-07 |
| EP0207767B1 (en) | 1991-03-13 |
| GB8516537D0 (en) | 1985-07-31 |
| GB2178062A (en) | 1987-02-04 |
| GB2178062B (en) | 1990-01-17 |
| JPH0524231B2 (enExample) | 1993-04-07 |
| US4935661A (en) | 1990-06-19 |
| EP0207767A3 (en) | 1989-02-08 |
| DE3678048D1 (de) | 1991-04-18 |
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