JPS6247897A - 読み出し増幅器 - Google Patents

読み出し増幅器

Info

Publication number
JPS6247897A
JPS6247897A JP60188896A JP18889685A JPS6247897A JP S6247897 A JPS6247897 A JP S6247897A JP 60188896 A JP60188896 A JP 60188896A JP 18889685 A JP18889685 A JP 18889685A JP S6247897 A JPS6247897 A JP S6247897A
Authority
JP
Japan
Prior art keywords
constant current
signal
transistors
transistor
differential amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60188896A
Other languages
English (en)
Japanese (ja)
Inventor
Kazuo Watanabe
和雄 渡辺
Masatoshi Yano
矢野　正敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP60188896A priority Critical patent/JPS6247897A/ja
Priority to DE8686111875T priority patent/DE3676007D1/de
Priority to EP86111875A priority patent/EP0212665B1/en
Priority to KR1019860007161A priority patent/KR950001126B1/ko
Publication of JPS6247897A publication Critical patent/JPS6247897A/ja
Priority to US07/212,044 priority patent/US4845672A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
JP60188896A 1985-08-28 1985-08-28 読み出し増幅器 Pending JPS6247897A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60188896A JPS6247897A (ja) 1985-08-28 1985-08-28 読み出し増幅器
DE8686111875T DE3676007D1 (de) 1985-08-28 1986-08-27 Leseverstaerker fuer statischer speicher.
EP86111875A EP0212665B1 (en) 1985-08-28 1986-08-27 Sense amplifier for static memory
KR1019860007161A KR950001126B1 (ko) 1985-08-28 1986-08-28 메모리 회로
US07/212,044 US4845672A (en) 1985-08-28 1988-06-24 Memory circuit with active load

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60188896A JPS6247897A (ja) 1985-08-28 1985-08-28 読み出し増幅器

Publications (1)

Publication Number Publication Date
JPS6247897A true JPS6247897A (ja) 1987-03-02

Family

ID=16231775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60188896A Pending JPS6247897A (ja) 1985-08-28 1985-08-28 読み出し増幅器

Country Status (5)

Country Link
US (1) US4845672A (ko)
EP (1) EP0212665B1 (ko)
JP (1) JPS6247897A (ko)
KR (1) KR950001126B1 (ko)
DE (1) DE3676007D1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158692A (ja) * 1987-09-04 1989-06-21 Hitachi Ltd 半導体メモリ
JPH0352195A (ja) * 1989-07-20 1991-03-06 Toshiba Corp センス回路

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954992A (en) * 1987-12-24 1990-09-04 Mitsubishi Denki Kabushiki Kaisha Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor
US5132576A (en) * 1990-11-05 1992-07-21 Ict International Cmos Technology, Inc. Sense amplifier having load device providing improved access time
US5222039A (en) * 1990-11-28 1993-06-22 Thunderbird Technologies, Inc. Static random access memory (SRAM) including Fermi-threshold field effect transistors
US5384730A (en) * 1991-05-31 1995-01-24 Thunderbird Technologies, Inc. Coincident activation of pass transistors in a random access memory
US5305269A (en) * 1991-05-31 1994-04-19 Thunderbird Technologies, Inc. Differential latching inverter and random access memory using same
US5304874A (en) * 1991-05-31 1994-04-19 Thunderbird Technologies, Inc. Differential latching inverter and random access memory using same
US5341333A (en) * 1992-08-11 1994-08-23 Integrated Device Technology, Inc. Circuits and methods for amplification of electrical signals
JPH0685564A (ja) * 1992-09-01 1994-03-25 Mitsubishi Electric Corp 増幅器回路
DE19713833C1 (de) * 1997-04-03 1998-10-01 Siemens Ag Eingangsverstärker für Eingangssignale mit steilen Flanken, insbesondere High-Low-Flanken
JP3022410B2 (ja) * 1997-06-17 2000-03-21 日本電気株式会社 インタフェース回路およびその判定レベル設定方法
US6064613A (en) * 1998-12-28 2000-05-16 Etron Technology, Inc. Pre-sense amplifier with reduced output swing
KR100360405B1 (ko) * 2000-08-09 2002-11-13 삼성전자 주식회사 출력 안정도를 개선하는 반도체 장치의 데이터 출력용증폭 회로 및 이를 구비하는 반도체 장치
US6429735B1 (en) * 2001-08-29 2002-08-06 National Semiconductor Corporation High speed output buffer
US7218564B2 (en) * 2004-07-16 2007-05-15 Promos Technologies Inc. Dual equalization devices for long data line pairs
US7579898B2 (en) * 2006-07-31 2009-08-25 Freescale Semiconductor, Inc. Temperature sensor device and methods thereof
US8705304B2 (en) * 2010-03-26 2014-04-22 Micron Technology, Inc. Current mode sense amplifier with passive load
KR101543701B1 (ko) * 2014-12-22 2015-08-12 연세대학교 산학협력단 감지 증폭기 및 그를 이용한 반도체 메모리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105389A (en) * 1980-01-22 1981-08-21 Fujitsu Ltd Potential difference detecting circuit
JPS6246486A (ja) * 1985-08-23 1987-02-28 Hitachi Ltd ダイナミツク型ｒａｍ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52111341A (en) * 1976-03-16 1977-09-19 Toshiba Corp Semiconductor memory device
US4272834A (en) * 1978-10-06 1981-06-09 Hitachi, Ltd. Data line potential setting circuit and MIS memory circuit using the same
JPS6027113B2 (ja) * 1980-02-13 1985-06-27 日本電気株式会社 プリチャ−ジ装置
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
US4412143A (en) * 1981-03-26 1983-10-25 Ncr Corporation MOS Sense amplifier
JPS57208690A (en) * 1981-06-19 1982-12-21 Hitachi Ltd Semiconductor storage device
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
JPS5891591A (ja) * 1981-11-27 1983-05-31 Toshiba Corp 半導体メモリのパワ−セ−ブ方式
US4639900A (en) * 1984-02-22 1987-01-27 U.S. Philips Corporation Method and a system for monitoring a sea area
US4665507A (en) * 1984-04-20 1987-05-12 Hitachi, Ltd. Semiconductor memory having load devices controlled by a write signal
JPH0770222B2 (ja) * 1984-06-04 1995-07-31 株式会社日立製作所 Ｍｏｓスタテイツク型ｒａｍ
GB2172761B (en) * 1985-03-18 1988-11-09 Texas Instruments Ltd Random access memory using semiconductor data storage elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105389A (en) * 1980-01-22 1981-08-21 Fujitsu Ltd Potential difference detecting circuit
JPS6246486A (ja) * 1985-08-23 1987-02-28 Hitachi Ltd ダイナミツク型ｒａｍ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158692A (ja) * 1987-09-04 1989-06-21 Hitachi Ltd 半導体メモリ
JPH0352195A (ja) * 1989-07-20 1991-03-06 Toshiba Corp センス回路

Also Published As

Publication number Publication date
EP0212665B1 (en) 1990-12-05
EP0212665A3 (en) 1988-07-13
KR950001126B1 (ko) 1995-02-11
EP0212665A2 (en) 1987-03-04
KR870002592A (ko) 1987-03-31
DE3676007D1 (de) 1991-01-17
US4845672A (en) 1989-07-04

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