JPS62115440A - ホトレジスト組成物およびｔ−置換オルガノメチルビニルアリ−ルエ−テル材料 - Google Patents

ホトレジスト組成物およびｔ−置換オルガノメチルビニルアリ−ルエ−テル材料

Info

Publication number
JPS62115440A
JPS62115440A JP61223978A JP22397886A JPS62115440A JP S62115440 A JPS62115440 A JP S62115440A JP 61223978 A JP61223978 A JP 61223978A JP 22397886 A JP22397886 A JP 22397886A JP S62115440 A JPS62115440 A JP S62115440A
Authority
JP
Japan
Prior art keywords
alkyl
group
monovalent
hydrogen
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61223978A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0569420B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
ジェームズ・ビンセント・クリベロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS62115440A publication Critical patent/JPS62115440A/ja
Publication of JPH0569420B2 publication Critical patent/JPH0569420B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP61223978A 1985-09-27 1986-09-24 ホトレジスト組成物およびｔ−置換オルガノメチルビニルアリ−ルエ−テル材料 Granted JPS62115440A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US780,768 1985-09-27
US06/780,768 US4603101A (en) 1985-09-27 1985-09-27 Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials

Publications (2)

Publication Number Publication Date
JPS62115440A true JPS62115440A (ja) 1987-05-27
JPH0569420B2 JPH0569420B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-10-01

Family

ID=25120636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61223978A Granted JPS62115440A (ja) 1985-09-27 1986-09-24 ホトレジスト組成物およびｔ−置換オルガノメチルビニルアリ−ルエ−テル材料

Country Status (5)

Country Link
US (1) US4603101A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS62115440A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3620677C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2588099B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2180837B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JPH02238041A (ja) * 1989-03-10 1990-09-20 Fujitsu Ltd Ｘ線レジスト組成物
JPH04195138A (ja) * 1990-11-28 1992-07-15 Shin Etsu Chem Co Ltd レジスト材
US5216135A (en) * 1990-01-30 1993-06-01 Wako Pure Chemical Industries, Ltd. Diazodisulfones
US5314931A (en) * 1991-05-28 1994-05-24 Shin-Etsu Chemical Co., Limited Resist compositions
EP0704762A1 (en) 1994-09-02 1996-04-03 Wako Pure Chemical Industries Ltd Resist material and pattern formation
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WO1999048945A1 (fr) * 1998-03-20 1999-09-30 Nippon Soda Co., Ltd. Composition photodurcissable contenant un sel d'iodonium
US6027854A (en) * 1997-02-28 2000-02-22 Shin-Etsu Chemical Co., Ltd. Polymers chemically amplified positive resist compositions, and patterning method
US6033828A (en) * 1997-01-27 2000-03-07 Shin-Etsu Chemical Co., Ltd. Partially hydrogenated polymers and chemically amplified positive resist compositions
US6136502A (en) * 1997-10-08 2000-10-24 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6156481A (en) * 1998-10-29 2000-12-05 Shin-Etsu Chemical Co., Ltd. Positive resist composition
US6156477A (en) * 1997-01-24 2000-12-05 Shin-Etsu Chemical Co., Ltd. Polymers and chemically amplified positive resist compositions
US6284429B1 (en) 1999-02-25 2001-09-04 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US6384169B1 (en) 1997-10-08 2002-05-07 Shin-Etsu Chemical Co., Ltd. Styrene polymer, chemically amplified positive resist composition and patterning process
US6414101B1 (en) 1999-03-26 2002-07-02 Shin-Etsu Chemical Co., Ltd. Dendritic polymers and making method
US6511785B1 (en) 1999-11-12 2003-01-28 Shin Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and patterning method
US6586157B2 (en) 2000-04-20 2003-07-01 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US6641975B2 (en) 2000-08-14 2003-11-04 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
EP1378795A1 (en) 2002-07-04 2004-01-07 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6737214B2 (en) 2000-03-09 2004-05-18 Shin-Etsu Chemical Co., Ltd. Chemical amplification resist compositions
US6746817B2 (en) 2000-11-01 2004-06-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6949323B2 (en) 2001-10-30 2005-09-27 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7132215B2 (en) 2002-09-30 2006-11-07 Shin-Etsu Chemical Co., Ltd. Ester compounds, polymers, resist compositions and patterning process
US7220808B2 (en) 2003-03-10 2007-05-22 Maruzen Petrochemical Co. Ltd. Thiol compound, copolymer and method for producing the copolymer
US7267923B2 (en) 2003-05-26 2007-09-11 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7344827B2 (en) 2003-05-07 2008-03-18 Shin-Etsu Chemical Co., Inc. Fine contact hole forming method employing thermal flow process
US7501223B2 (en) 2006-10-13 2009-03-10 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process using the same
US7618763B2 (en) 2005-11-08 2009-11-17 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US7695889B2 (en) 2005-05-10 2010-04-13 Maruzen Petrochemical Co., Ltd. Copolymer for semiconductor lithography and process for production thereof
US7838606B2 (en) 2003-10-30 2010-11-23 Maruzen Petrochemical Co., Ltd Production process of copolymer for semiconductor lithography
US7902385B2 (en) 2006-07-06 2011-03-08 Shin-Etsu Chemical Co., Ltd. Ester compounds and their preparation, polymers, resist compositions and patterning process
US7960494B2 (en) 2006-12-06 2011-06-14 Maruzen Petrochemical Co., Ltd. Copolymer for semiconductor lithography and process for producing the same
US8030419B2 (en) 2006-12-22 2011-10-04 Maruzen Petrochemical Co., Ltd. Process for producing polymer for semiconductor lithography
US8067516B2 (en) 2006-05-18 2011-11-29 Maruzen Petrochemical Co., Ltd. Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography
US8163852B2 (en) 2003-02-20 2012-04-24 Maruzen Petrochemical Co., Ltd. Resist polymer and method for producing the polymer
US8211615B2 (en) 2006-11-07 2012-07-03 Maruzen Petrochemical Co., Ltd. Copolymer for immersion lithography and compositions
US8377625B2 (en) 2008-10-30 2013-02-19 Maruzen Petrochemical Co., Ltd. Method for producing a copolymer solution with a uniform concentration for semiconductor lithography
US8420290B2 (en) 2008-11-28 2013-04-16 Shin-Etsu Chemical Co., Ltd Acetal compounds and their preparation, polymers, resist compositions and patterning process
US8859180B2 (en) 2006-10-23 2014-10-14 Maruzen Petrochemical Co., Ltd. Copolymer and composition for semiconductor lithography and process for producing the copolymer

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US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
JPS62227143A (ja) * 1986-03-28 1987-10-06 Toshiba Corp 感光性組成物
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
US5362607A (en) * 1986-06-13 1994-11-08 Microsi, Inc. Method for making a patterned resist substrate composite
US4931379A (en) * 1986-10-23 1990-06-05 International Business Machines Corporation High sensitivity resists having autodecomposition temperatures greater than about 160° C.
US4800152A (en) * 1987-03-16 1989-01-24 International Business Machines Corporation Negative resist compositions
DE3730783A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3828063A1 (de) * 1988-08-18 1990-02-22 Hoechst Ag Substituierte (2-haloalkoxy-1.1.2-trifluoraethoxy)-styrole, verfahren zu ihrer herstellung und ihre verwendung
DE3902115A1 (de) * 1989-01-25 1990-08-02 Basf Ag Strahlungsempfindliche polymere
DE3927632A1 (de) * 1989-08-22 1991-02-28 Basf Ag Umsetzungsprodukt, verfahren zu dessen herstellung und damit erhaltenes strahlungsempfindliches material
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
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JP2583364B2 (ja) * 1990-06-19 1997-02-19 三菱電機株式会社 感光性樹脂組成物
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JP2707164B2 (ja) * 1991-05-28 1998-01-28 信越化学工業株式会社 レジスト材
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
US5348838A (en) * 1991-07-31 1994-09-20 Kabushiki Kaisha Toshiba Photosensitive composition comprising alkali soluble binder and photoacid generator having sulfonyl group
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JP3340760B2 (ja) 1992-05-19 2002-11-05 北興化学工業株式会社 パラ−第三級ブトキシフェニルジメチルカルビノールおよびその製造法
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DE3620677A1 (de) 1987-04-16
FR2588099B1 (fr) 1991-01-11
JPH0569420B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-10-01
US4603101A (en) 1986-07-29
GB8612613D0 (en) 1986-07-02
GB2180837B (en) 1990-05-23
GB2180837A (en) 1987-04-08
DE3620677C2 (de) 1998-07-02
FR2588099A1 (fr) 1987-04-03

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