JPS6155258B2 - - Google Patents

Info

Publication number
JPS6155258B2
JPS6155258B2 JP52022685A JP2268577A JPS6155258B2 JP S6155258 B2 JPS6155258 B2 JP S6155258B2 JP 52022685 A JP52022685 A JP 52022685A JP 2268577 A JP2268577 A JP 2268577A JP S6155258 B2 JPS6155258 B2 JP S6155258B2
Authority
JP
Japan
Prior art keywords
insulating film
film
polycrystalline silicon
impurity doped
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52022685A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53108392A (en
Inventor
Mitsumasa Koyanagi
Kikuji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2268577A priority Critical patent/JPS53108392A/ja
Priority to NLAANVRAGE7707297,A priority patent/NL176415C/xx
Priority to GB27724/77A priority patent/GB1572674A/en
Priority to DE19772730202 priority patent/DE2730202A1/de
Priority to US05/812,907 priority patent/US4151607A/en
Publication of JPS53108392A publication Critical patent/JPS53108392A/ja
Publication of JPS6155258B2 publication Critical patent/JPS6155258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2268577A 1976-07-05 1977-03-04 Semiconductor device Granted JPS53108392A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2268577A JPS53108392A (en) 1977-03-04 1977-03-04 Semiconductor device
NLAANVRAGE7707297,A NL176415C (nl) 1976-07-05 1977-06-30 Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
GB27724/77A GB1572674A (en) 1976-07-05 1977-07-01 Semiconductor memory devices
DE19772730202 DE2730202A1 (de) 1976-07-05 1977-07-04 Halbleiterspeicher
US05/812,907 US4151607A (en) 1976-07-05 1977-07-05 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2268577A JPS53108392A (en) 1977-03-04 1977-03-04 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60093607A Division JPS6110272A (ja) 1985-05-02 1985-05-02 半導体装置の製造方法
JP60093606A Division JPS6110271A (ja) 1985-05-02 1985-05-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS53108392A JPS53108392A (en) 1978-09-21
JPS6155258B2 true JPS6155258B2 (ko) 1986-11-27

Family

ID=12089712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2268577A Granted JPS53108392A (en) 1976-07-05 1977-03-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108392A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198560U (ko) * 1986-06-09 1987-12-17

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209156A (ja) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS58215067A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
JPS602784B2 (ja) * 1982-12-20 1985-01-23 富士通株式会社 半導体記憶装置
US5244825A (en) * 1983-02-23 1993-09-14 Texas Instruments Incorporated DRAM process with improved poly-to-poly capacitor
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
JPH0618257B2 (ja) * 1984-04-28 1994-03-09 富士通株式会社 半導体記憶装置の製造方法
JPH0673368B2 (ja) * 1985-01-31 1994-09-14 富士通株式会社 半導体記憶装置およびその製造方法
US5098192A (en) * 1986-04-30 1992-03-24 Texas Instruments Incorporated DRAM with improved poly-to-poly capacitor
JPH02312269A (ja) * 1989-05-26 1990-12-27 Toshiba Corp 半導体記憶装置およびその製造方法
JPH0496270A (ja) * 1990-08-03 1992-03-27 Sharp Corp 半導体装置の製造方法
JP3421230B2 (ja) * 1997-11-04 2003-06-30 株式会社日立製作所 半導体記憶装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198560U (ko) * 1986-06-09 1987-12-17

Also Published As

Publication number Publication date
JPS53108392A (en) 1978-09-21

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