JPS53108392A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53108392A
JPS53108392A JP2268577A JP2268577A JPS53108392A JP S53108392 A JPS53108392 A JP S53108392A JP 2268577 A JP2268577 A JP 2268577A JP 2268577 A JP2268577 A JP 2268577A JP S53108392 A JPS53108392 A JP S53108392A
Authority
JP
Japan
Prior art keywords
semiconductor device
memory
duplicated
integration
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2268577A
Other languages
English (en)
Other versions
JPS6155258B2 (ja
Inventor
Mitsumasa Koyanagi
Kikuji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2268577A priority Critical patent/JPS53108392A/ja
Priority to NLAANVRAGE7707297,A priority patent/NL176415C/xx
Priority to GB27724/77A priority patent/GB1572674A/en
Priority to DE19772730202 priority patent/DE2730202A1/de
Priority to US05/812,907 priority patent/US4151607A/en
Publication of JPS53108392A publication Critical patent/JPS53108392A/ja
Publication of JPS6155258B2 publication Critical patent/JPS6155258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2268577A 1976-07-05 1977-03-04 Semiconductor device Granted JPS53108392A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2268577A JPS53108392A (en) 1977-03-04 1977-03-04 Semiconductor device
NLAANVRAGE7707297,A NL176415C (nl) 1976-07-05 1977-06-30 Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
GB27724/77A GB1572674A (en) 1976-07-05 1977-07-01 Semiconductor memory devices
DE19772730202 DE2730202A1 (de) 1976-07-05 1977-07-04 Halbleiterspeicher
US05/812,907 US4151607A (en) 1976-07-05 1977-07-05 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2268577A JPS53108392A (en) 1977-03-04 1977-03-04 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60093606A Division JPS6110271A (ja) 1985-05-02 1985-05-02 半導体装置
JP60093607A Division JPS6110272A (ja) 1985-05-02 1985-05-02 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS53108392A true JPS53108392A (en) 1978-09-21
JPS6155258B2 JPS6155258B2 (ja) 1986-11-27

Family

ID=12089712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2268577A Granted JPS53108392A (en) 1976-07-05 1977-03-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108392A (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209156A (ja) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPS58215067A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
JPS59125652A (ja) * 1982-12-20 1984-07-20 Fujitsu Ltd 半導体記憶装置
JPS60231357A (ja) * 1984-04-28 1985-11-16 Fujitsu Ltd 半導体記憶装置
JPS61176148A (ja) * 1985-01-31 1986-08-07 Fujitsu Ltd 半導体記憶装置
DE4016686A1 (de) * 1989-05-26 1990-11-29 Toshiba Kawasaki Kk Halbleiterspeicher und verfahren zu seiner herstellung
US5098192A (en) * 1986-04-30 1992-03-24 Texas Instruments Incorporated DRAM with improved poly-to-poly capacitor
JPH0496270A (ja) * 1990-08-03 1992-03-27 Sharp Corp 半導体装置の製造方法
US5244825A (en) * 1983-02-23 1993-09-14 Texas Instruments Incorporated DRAM process with improved poly-to-poly capacitor
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
US6157055A (en) * 1997-11-04 2000-12-05 Hitachi, Ltd. Semiconductor memory device having a long data retention time with the increase in leakage current suppressed

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198560U (ja) * 1986-06-09 1987-12-17

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209156A (ja) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH0427709B2 (ja) * 1982-05-31 1992-05-12 Nippon Telegraph & Telephone
JPS58215067A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
JPH0328828B2 (ja) * 1982-06-08 1991-04-22 Nippon Electric Co
JPS59125652A (ja) * 1982-12-20 1984-07-20 Fujitsu Ltd 半導体記憶装置
JPS602784B2 (ja) * 1982-12-20 1985-01-23 富士通株式会社 半導体記憶装置
US5244825A (en) * 1983-02-23 1993-09-14 Texas Instruments Incorporated DRAM process with improved poly-to-poly capacitor
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
JPS60231357A (ja) * 1984-04-28 1985-11-16 Fujitsu Ltd 半導体記憶装置
JPS61176148A (ja) * 1985-01-31 1986-08-07 Fujitsu Ltd 半導体記憶装置
US5098192A (en) * 1986-04-30 1992-03-24 Texas Instruments Incorporated DRAM with improved poly-to-poly capacitor
DE4016686A1 (de) * 1989-05-26 1990-11-29 Toshiba Kawasaki Kk Halbleiterspeicher und verfahren zu seiner herstellung
JPH0496270A (ja) * 1990-08-03 1992-03-27 Sharp Corp 半導体装置の製造方法
US6157055A (en) * 1997-11-04 2000-12-05 Hitachi, Ltd. Semiconductor memory device having a long data retention time with the increase in leakage current suppressed
US6329238B1 (en) 1997-11-04 2001-12-11 Hitachi, Ltd. Method of fabricating a memory device having a long data retention time with the increase in leakage current suppressed

Also Published As

Publication number Publication date
JPS6155258B2 (ja) 1986-11-27

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