JPS61288455A - 多層半導体装置の製造方法 - Google Patents

多層半導体装置の製造方法

Info

Publication number
JPS61288455A
JPS61288455A JP60131009A JP13100985A JPS61288455A JP S61288455 A JPS61288455 A JP S61288455A JP 60131009 A JP60131009 A JP 60131009A JP 13100985 A JP13100985 A JP 13100985A JP S61288455 A JPS61288455 A JP S61288455A
Authority
JP
Japan
Prior art keywords
semiconductor device
multilayer semiconductor
multilayer
heat sink
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60131009A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0528503B2 (enExample
Inventor
Takashi Kato
隆 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60131009A priority Critical patent/JPS61288455A/ja
Priority to KR1019860004722A priority patent/KR900008973B1/ko
Priority to EP86304575A priority patent/EP0206696B1/en
Priority to DE8686304575T priority patent/DE3685612T2/de
Publication of JPS61288455A publication Critical patent/JPS61288455A/ja
Priority to US07/667,257 priority patent/US5051865A/en
Publication of JPH0528503B2 publication Critical patent/JPH0528503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
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    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06551—Conductive connections on the side of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H—ELECTRICITY
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    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP60131009A 1985-06-17 1985-06-17 多層半導体装置の製造方法 Granted JPS61288455A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60131009A JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法
KR1019860004722A KR900008973B1 (ko) 1985-06-17 1986-06-13 다층 반도체장치
EP86304575A EP0206696B1 (en) 1985-06-17 1986-06-13 Multi-layer semiconductor device
DE8686304575T DE3685612T2 (de) 1985-06-17 1986-06-13 Mehrschicht-halbleiteranordnung.
US07/667,257 US5051865A (en) 1985-06-17 1991-03-11 Multi-layer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60131009A JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61288455A true JPS61288455A (ja) 1986-12-18
JPH0528503B2 JPH0528503B2 (enExample) 1993-04-26

Family

ID=15047836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60131009A Granted JPS61288455A (ja) 1985-06-17 1985-06-17 多層半導体装置の製造方法

Country Status (5)

Country Link
US (1) US5051865A (enExample)
EP (1) EP0206696B1 (enExample)
JP (1) JPS61288455A (enExample)
KR (1) KR900008973B1 (enExample)
DE (1) DE3685612T2 (enExample)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
US6982489B2 (en) 2003-04-01 2006-01-03 Renesas Technology Corp. Semiconductor device having a plurality of laminated semiconductor elements with water absorbing resin films interposed therebetween
US7361944B2 (en) 2004-03-18 2008-04-22 Seiko Epson Corporation Electrical device with a plurality of thin-film device layers
WO2008139605A1 (ja) * 2007-05-14 2008-11-20 Kabushiki Kaisha Nihon Micronics 積層型パッケージ、及び、積層型パッケージの形成方法
US9401183B2 (en) 1997-04-04 2016-07-26 Glenn J. Leedy Stacked integrated memory device

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FR2634064A1 (fr) * 1988-07-05 1990-01-12 Thomson Csf Composant electronique a couche de conductivite thermique elevee
US5038201A (en) * 1988-11-08 1991-08-06 Westinghouse Electric Corp. Wafer scale integrated circuit apparatus
EP0476136A4 (en) * 1990-01-24 1992-04-22 Nauchno-Proizvodstvenny Tsentr Elektronnoi Mikrotekhnologii Akademii Nauk Ssr Three-dimensional electronic unit and method of construction
JP3058898B2 (ja) * 1990-09-03 2000-07-04 三菱電機株式会社 半導体装置及びその評価方法
JPH0817221B2 (ja) * 1990-11-13 1996-02-21 株式会社東芝 半導体装置及び半導体ウェーハの実装方法
US5847448A (en) * 1990-12-11 1998-12-08 Thomson-Csf Method and device for interconnecting integrated circuits in three dimensions
US5451550A (en) * 1991-02-20 1995-09-19 Texas Instruments Incorporated Method of laser CVD seal a die edge
JPH0513666A (ja) * 1991-06-29 1993-01-22 Sony Corp 複合半導体装置
US5202754A (en) * 1991-09-13 1993-04-13 International Business Machines Corporation Three-dimensional multichip packages and methods of fabrication
JPH0715969B2 (ja) * 1991-09-30 1995-02-22 インターナショナル・ビジネス・マシーンズ・コーポレイション マルチチツプ集積回路パツケージ及びそのシステム
US5691885A (en) * 1992-03-17 1997-11-25 Massachusetts Institute Of Technology Three-dimensional interconnect having modules with vertical top and bottom connectors
ATE145292T1 (de) * 1992-03-17 1996-11-15 Massachusetts Inst Technology Geringbenachbarte dreidimensionale verbindung.
DE4211899C2 (de) * 1992-04-09 1998-07-16 Daimler Benz Aerospace Ag Mikrosystem-Laseranordnung und Mikrosystem-Laser
JPH0779144B2 (ja) * 1992-04-21 1995-08-23 インターナショナル・ビジネス・マシーンズ・コーポレイション 耐熱性半導体チップ・パッケージ
US5343366A (en) * 1992-06-24 1994-08-30 International Business Machines Corporation Packages for stacked integrated circuit chip cubes
DE69330450T2 (de) * 1992-08-05 2001-11-08 Fujitsu Ltd., Kawasaki Dreidimensionaler Multichipmodul
US5854534A (en) * 1992-08-05 1998-12-29 Fujitsu Limited Controlled impedence interposer substrate
US5313097A (en) * 1992-11-16 1994-05-17 International Business Machines, Corp. High density memory module
US5502667A (en) * 1993-09-13 1996-03-26 International Business Machines Corporation Integrated multichip memory module structure
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure
US5596226A (en) * 1994-09-06 1997-01-21 International Business Machines Corporation Semiconductor chip having a chip metal layer and a transfer metal and corresponding electronic module
US5521434A (en) * 1994-10-17 1996-05-28 International Business Machines Corporation Semiconductor chip and electronic module with integrated surface interconnects/components
US5701037A (en) * 1994-11-15 1997-12-23 Siemens Aktiengesellschaft Arrangement for inductive signal transmission between the chip layers of a vertically integrated circuit
US5818112A (en) * 1994-11-15 1998-10-06 Siemens Aktiengesellschaft Arrangement for capacitive signal transmission between the chip layers of a vertically integrated circuit
US5609772A (en) * 1995-06-05 1997-03-11 International Business Machines Corporation Cube maskless lead open process using chemical mechanical polish/lead-tip expose process
US5719745A (en) * 1995-07-12 1998-02-17 International Business Machines Corporation Extended surface cooling for chip stack applications
US5648684A (en) * 1995-07-26 1997-07-15 International Business Machines Corporation Endcap chip with conductive, monolithic L-connect for multichip stack
DE19543540C1 (de) * 1995-11-22 1996-11-21 Siemens Ag Vertikal integriertes Halbleiterbauelement mit zwei miteinander verbundenen Substraten und Herstellungsverfahren dafür
US5763943A (en) * 1996-01-29 1998-06-09 International Business Machines Corporation Electronic modules with integral sensor arrays
US5952725A (en) 1996-02-20 1999-09-14 Micron Technology, Inc. Stacked semiconductor devices
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6784023B2 (en) * 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
US5781413A (en) * 1996-09-30 1998-07-14 International Business Machines Corporation Method and apparatus for directing the input/output connection of integrated circuit chip cube configurations
US5815374A (en) * 1996-09-30 1998-09-29 International Business Machines Corporation Method and apparatus for redirecting certain input/output connections of integrated circuit chip configurations
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
SE511425C2 (sv) * 1996-12-19 1999-09-27 Ericsson Telefon Ab L M Packningsanordning för integrerade kretsar
US6075287A (en) * 1997-04-03 2000-06-13 International Business Machines Corporation Integrated, multi-chip, thermally conductive packaging device and methodology
US5793103A (en) * 1997-05-08 1998-08-11 International Business Machines Corporation Insulated cube with exposed wire lead
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EP0206696B1 (en) 1992-06-10
EP0206696A2 (en) 1986-12-30
EP0206696A3 (en) 1988-08-10
DE3685612T2 (de) 1993-01-28
KR900008973B1 (ko) 1990-12-15
DE3685612D1 (de) 1992-07-16
JPH0528503B2 (enExample) 1993-04-26
US5051865A (en) 1991-09-24
KR870000760A (ko) 1987-02-20

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