GB1083200A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1083200A GB1083200A GB36813/66A GB3681366A GB1083200A GB 1083200 A GB1083200 A GB 1083200A GB 36813/66 A GB36813/66 A GB 36813/66A GB 3681366 A GB3681366 A GB 3681366A GB 1083200 A GB1083200 A GB 1083200A
- Authority
- GB
- United Kingdom
- Prior art keywords
- indium
- stack
- elements
- heat sinks
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 abstract 5
- 229910052738 indium Inorganic materials 0.000 abstract 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 5
- 239000011248 coating agent Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 238000003466 welding Methods 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/02365—Fixing laser chips on mounts by clamping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
Abstract
1,083,200. Semi-conductor lasers. STANDARD TELEPHONES & CABLES Ltd. Aug. 17, 1966, No. 36813/66. Headings H1C and H1K. An array of semi-conductor laser elements is produced by stacking a plurality of laser elements interleaved with indium coated metal inserts, cold pressure welding the elements to the inserts, the elements having their resonant cavity reflective surfaces parallel, polishing two sides of the stack which do not contain the reflective surfaces, coating the polished faces with a thin electrically insulating coating, coating each insulating coating with a layer of indium, mounting the stack between two heat sinks and cold pressure welding the heat sinks to the indium layers on the insulating coatings. The metal inserts may be of copper, the insulating layers of silicon monoxide, and the laser elements of gallium arsenide. The top and bottom elements of the stack are preferably coated metal inserts, and the two indium layers welded to the heat sinks are preferably connected to the indium layers at the respective ends of the stack. The heat sinks may then be used as electrical terminals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB36813/66A GB1083200A (en) | 1966-08-17 | 1966-08-17 | Improvements in or relating to semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB36813/66A GB1083200A (en) | 1966-08-17 | 1966-08-17 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1083200A true GB1083200A (en) | 1967-09-13 |
Family
ID=10391384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB36813/66A Expired GB1083200A (en) | 1966-08-17 | 1966-08-17 | Improvements in or relating to semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1083200A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0206696A2 (en) * | 1985-06-17 | 1986-12-30 | Fujitsu Limited | Multi-layer semiconductor device |
WO2011029846A1 (en) * | 2009-09-09 | 2011-03-17 | Jenoptik Laser Gmbh | Method for thermally contacting opposing electrical connections of a semiconductor component arrangement |
WO2014066526A1 (en) * | 2012-10-24 | 2014-05-01 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
US9368934B2 (en) | 2011-02-14 | 2016-06-14 | Spectrasensors, Inc. | Semiconductor laser mounting for improved frequency stability |
US9711937B2 (en) | 2011-02-14 | 2017-07-18 | Spectrasensors, Inc. | Semiconductor laser mounting with intact diffusion barrier layer |
-
1966
- 1966-08-17 GB GB36813/66A patent/GB1083200A/en not_active Expired
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0206696A2 (en) * | 1985-06-17 | 1986-12-30 | Fujitsu Limited | Multi-layer semiconductor device |
EP0206696A3 (en) * | 1985-06-17 | 1988-08-10 | Fujitsu Limited | Multi-layer semiconductor device |
US5051865A (en) * | 1985-06-17 | 1991-09-24 | Fujitsu Limited | Multi-layer semiconductor device |
WO2011029846A1 (en) * | 2009-09-09 | 2011-03-17 | Jenoptik Laser Gmbh | Method for thermally contacting opposing electrical connections of a semiconductor component arrangement |
US8486766B2 (en) | 2009-09-09 | 2013-07-16 | Jenoptik Laser Gmbh | Method for thermally contacting opposing electrical connections of a semiconductor component arrangement |
US9368934B2 (en) | 2011-02-14 | 2016-06-14 | Spectrasensors, Inc. | Semiconductor laser mounting for improved frequency stability |
US9711937B2 (en) | 2011-02-14 | 2017-07-18 | Spectrasensors, Inc. | Semiconductor laser mounting with intact diffusion barrier layer |
US9646949B2 (en) | 2011-08-17 | 2017-05-09 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
US10224693B2 (en) | 2011-08-17 | 2019-03-05 | Spectrasensors, Inc. | Semiconductor laser mounting with intact diffusion barrier layer |
WO2014066526A1 (en) * | 2012-10-24 | 2014-05-01 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
US9166130B2 (en) | 2012-10-24 | 2015-10-20 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
AU2013334609B2 (en) * | 2012-10-24 | 2016-12-01 | Spectrasensors, Inc. | Solderless mounting for semiconductor lasers |
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