GB1083200A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1083200A
GB1083200A GB36813/66A GB3681366A GB1083200A GB 1083200 A GB1083200 A GB 1083200A GB 36813/66 A GB36813/66 A GB 36813/66A GB 3681366 A GB3681366 A GB 3681366A GB 1083200 A GB1083200 A GB 1083200A
Authority
GB
United Kingdom
Prior art keywords
indium
stack
elements
heat sinks
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36813/66A
Inventor
Christopher David Dobson
Frank Stanley Keeble
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB36813/66A priority Critical patent/GB1083200A/en
Publication of GB1083200A publication Critical patent/GB1083200A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)

Abstract

1,083,200. Semi-conductor lasers. STANDARD TELEPHONES & CABLES Ltd. Aug. 17, 1966, No. 36813/66. Headings H1C and H1K. An array of semi-conductor laser elements is produced by stacking a plurality of laser elements interleaved with indium coated metal inserts, cold pressure welding the elements to the inserts, the elements having their resonant cavity reflective surfaces parallel, polishing two sides of the stack which do not contain the reflective surfaces, coating the polished faces with a thin electrically insulating coating, coating each insulating coating with a layer of indium, mounting the stack between two heat sinks and cold pressure welding the heat sinks to the indium layers on the insulating coatings. The metal inserts may be of copper, the insulating layers of silicon monoxide, and the laser elements of gallium arsenide. The top and bottom elements of the stack are preferably coated metal inserts, and the two indium layers welded to the heat sinks are preferably connected to the indium layers at the respective ends of the stack. The heat sinks may then be used as electrical terminals.
GB36813/66A 1966-08-17 1966-08-17 Improvements in or relating to semiconductor devices Expired GB1083200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB36813/66A GB1083200A (en) 1966-08-17 1966-08-17 Improvements in or relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36813/66A GB1083200A (en) 1966-08-17 1966-08-17 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1083200A true GB1083200A (en) 1967-09-13

Family

ID=10391384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36813/66A Expired GB1083200A (en) 1966-08-17 1966-08-17 Improvements in or relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB1083200A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206696A2 (en) * 1985-06-17 1986-12-30 Fujitsu Limited Multi-layer semiconductor device
WO2011029846A1 (en) * 2009-09-09 2011-03-17 Jenoptik Laser Gmbh Method for thermally contacting opposing electrical connections of a semiconductor component arrangement
WO2014066526A1 (en) * 2012-10-24 2014-05-01 Spectrasensors, Inc. Solderless mounting for semiconductor lasers
US9368934B2 (en) 2011-02-14 2016-06-14 Spectrasensors, Inc. Semiconductor laser mounting for improved frequency stability
US9711937B2 (en) 2011-02-14 2017-07-18 Spectrasensors, Inc. Semiconductor laser mounting with intact diffusion barrier layer

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206696A2 (en) * 1985-06-17 1986-12-30 Fujitsu Limited Multi-layer semiconductor device
EP0206696A3 (en) * 1985-06-17 1988-08-10 Fujitsu Limited Multi-layer semiconductor device
US5051865A (en) * 1985-06-17 1991-09-24 Fujitsu Limited Multi-layer semiconductor device
WO2011029846A1 (en) * 2009-09-09 2011-03-17 Jenoptik Laser Gmbh Method for thermally contacting opposing electrical connections of a semiconductor component arrangement
US8486766B2 (en) 2009-09-09 2013-07-16 Jenoptik Laser Gmbh Method for thermally contacting opposing electrical connections of a semiconductor component arrangement
US9368934B2 (en) 2011-02-14 2016-06-14 Spectrasensors, Inc. Semiconductor laser mounting for improved frequency stability
US9711937B2 (en) 2011-02-14 2017-07-18 Spectrasensors, Inc. Semiconductor laser mounting with intact diffusion barrier layer
US9646949B2 (en) 2011-08-17 2017-05-09 Spectrasensors, Inc. Solderless mounting for semiconductor lasers
US10224693B2 (en) 2011-08-17 2019-03-05 Spectrasensors, Inc. Semiconductor laser mounting with intact diffusion barrier layer
WO2014066526A1 (en) * 2012-10-24 2014-05-01 Spectrasensors, Inc. Solderless mounting for semiconductor lasers
US9166130B2 (en) 2012-10-24 2015-10-20 Spectrasensors, Inc. Solderless mounting for semiconductor lasers
AU2013334609B2 (en) * 2012-10-24 2016-12-01 Spectrasensors, Inc. Solderless mounting for semiconductor lasers

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