JPS6123663B2 - - Google Patents
Info
- Publication number
- JPS6123663B2 JPS6123663B2 JP53053254A JP5325478A JPS6123663B2 JP S6123663 B2 JPS6123663 B2 JP S6123663B2 JP 53053254 A JP53053254 A JP 53053254A JP 5325478 A JP5325478 A JP 5325478A JP S6123663 B2 JPS6123663 B2 JP S6123663B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- layer
- conductive layer
- field effect
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000005669 field effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772720533 DE2720533A1 (de) | 1977-05-06 | 1977-05-06 | Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53138687A JPS53138687A (en) | 1978-12-04 |
JPS6123663B2 true JPS6123663B2 (US07534539-20090519-C00280.png) | 1986-06-06 |
Family
ID=6008278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5325478A Granted JPS53138687A (en) | 1977-05-06 | 1978-05-02 | Monolithic ic having one transistor memory |
Country Status (5)
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL173572C (nl) * | 1976-02-12 | 1984-02-01 | Philips Nv | Halfgeleiderinrichting. |
US4360823A (en) * | 1977-03-16 | 1982-11-23 | U.S. Philips Corporation | Semiconductor device having an improved multilayer wiring system |
US4475118A (en) * | 1978-12-21 | 1984-10-02 | National Semiconductor Corporation | Dynamic MOS RAM with storage cells having a mainly insulated first plate |
JPS5593252A (en) * | 1979-01-05 | 1980-07-15 | Mitsubishi Electric Corp | Substrate potential generating apparatus |
JPS5846178B2 (ja) * | 1980-12-03 | 1983-10-14 | 富士通株式会社 | 半導体装置 |
DE3137708A1 (de) * | 1981-09-22 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Integratorschaltung mit einem differenzverstaerker |
JPS6014462A (ja) * | 1983-07-05 | 1985-01-25 | Oki Electric Ind Co Ltd | 半導体メモリ素子 |
US4591738A (en) * | 1983-10-27 | 1986-05-27 | International Business Machines Corporation | Charge pumping circuit |
US4833521A (en) * | 1983-12-13 | 1989-05-23 | Fairchild Camera & Instrument Corp. | Means for reducing signal propagation losses in very large scale integrated circuits |
US4652898A (en) * | 1984-07-19 | 1987-03-24 | International Business Machines Corporation | High speed merged charge memory |
JPS61127161A (ja) * | 1984-11-26 | 1986-06-14 | Fujitsu Ltd | 半導体記憶装置 |
JPH0815206B2 (ja) * | 1986-01-30 | 1996-02-14 | 三菱電機株式会社 | 半導体記憶装置 |
US5049958A (en) * | 1989-01-27 | 1991-09-17 | Texas Instruments Incorporated | Stacked capacitors for VLSI semiconductor devices |
JPH0748553B2 (ja) * | 1989-03-14 | 1995-05-24 | シャープ株式会社 | 半導体装置 |
KR920009748B1 (ko) * | 1990-05-31 | 1992-10-22 | 삼성전자 주식회사 | 적층형 캐패시터셀의 구조 및 제조방법 |
JP2823393B2 (ja) * | 1991-09-09 | 1998-11-11 | シャープ株式会社 | 半導体メモリ素子及びその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5195742A (US07534539-20090519-C00280.png) * | 1975-02-20 | 1976-08-21 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
BE789501A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur |
DE2318912A1 (de) * | 1972-06-30 | 1974-01-17 | Ibm | Integrierte halbleiteranordnung |
DE2441385C3 (de) * | 1974-08-29 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement |
US4012757A (en) * | 1975-05-05 | 1977-03-15 | Intel Corporation | Contactless random-access memory cell and cell pair |
DE2553591C2 (de) * | 1975-11-28 | 1977-11-17 | Siemens AG, 1000 Berlin und 8000 München | Speichermatrix mit einem oder mehreren Ein-Transistor-Speicherelementen |
JPS5279679A (en) * | 1975-12-26 | 1977-07-04 | Toshiba Corp | Semiconductor memory device |
NL173572C (nl) * | 1976-02-12 | 1984-02-01 | Philips Nv | Halfgeleiderinrichting. |
-
1977
- 1977-05-06 DE DE19772720533 patent/DE2720533A1/de active Granted
-
1978
- 1978-04-20 US US05/898,489 patent/US4197554A/en not_active Expired - Lifetime
- 1978-04-28 FR FR7812678A patent/FR2390009B1/fr not_active Expired
- 1978-05-02 JP JP5325478A patent/JPS53138687A/ja active Granted
- 1978-05-03 GB GB17355/78A patent/GB1588089A/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5195742A (US07534539-20090519-C00280.png) * | 1975-02-20 | 1976-08-21 |
Also Published As
Publication number | Publication date |
---|---|
DE2720533A1 (de) | 1978-11-09 |
FR2390009A1 (US07534539-20090519-C00280.png) | 1978-12-01 |
DE2720533C2 (US07534539-20090519-C00280.png) | 1989-05-11 |
US4197554A (en) | 1980-04-08 |
JPS53138687A (en) | 1978-12-04 |
GB1588089A (en) | 1981-04-15 |
FR2390009B1 (US07534539-20090519-C00280.png) | 1982-10-22 |
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