JPS6070757A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS6070757A
JPS6070757A JP58177957A JP17795783A JPS6070757A JP S6070757 A JPS6070757 A JP S6070757A JP 58177957 A JP58177957 A JP 58177957A JP 17795783 A JP17795783 A JP 17795783A JP S6070757 A JPS6070757 A JP S6070757A
Authority
JP
Japan
Prior art keywords
region
type
integrated circuit
oxide film
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58177957A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527267B2 (enrdf_load_stackoverflow
Inventor
Hideo Sunami
英夫 角南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58177957A priority Critical patent/JPS6070757A/ja
Publication of JPS6070757A publication Critical patent/JPS6070757A/ja
Publication of JPH0527267B2 publication Critical patent/JPH0527267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58177957A 1983-09-28 1983-09-28 半導体集積回路 Granted JPS6070757A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58177957A JPS6070757A (ja) 1983-09-28 1983-09-28 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58177957A JPS6070757A (ja) 1983-09-28 1983-09-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS6070757A true JPS6070757A (ja) 1985-04-22
JPH0527267B2 JPH0527267B2 (enrdf_load_stackoverflow) 1993-04-20

Family

ID=16040033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58177957A Granted JPS6070757A (ja) 1983-09-28 1983-09-28 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS6070757A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480968A (ja) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
JP2010232631A (ja) * 2009-12-10 2010-10-14 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
JP2011061181A (ja) * 2009-08-11 2011-03-24 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
JP2011077437A (ja) * 2009-10-01 2011-04-14 Unisantis Electronics Japan Ltd 半導体装置
JP2011086900A (ja) * 2009-09-16 2011-04-28 Unisantis Electronics Japan Ltd 半導体装置
JP2011216657A (ja) * 2010-03-31 2011-10-27 Unisantis Electronics Japan Ltd 半導体装置
US8319293B2 (en) 2009-03-25 2012-11-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP2013012765A (ja) * 2012-08-29 2013-01-17 Unisantis Electronics Singapore Pte Ltd 半導体装置
JP2013058773A (ja) * 2012-10-26 2013-03-28 Unisantis Electronics Singapore Pte Ltd 半導体装置
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
JP2014140053A (ja) * 2014-02-27 2014-07-31 Unisantis Electronics Singapore Pte Ltd 半導体装置
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
CN107145407A (zh) * 2017-05-16 2017-09-08 成都汇智远景科技有限公司 一种对数据进行本地备份的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378183A (en) * 1976-12-22 1978-07-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS5840852A (ja) * 1981-09-03 1983-03-09 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS5874067A (ja) * 1981-10-29 1983-05-04 Semiconductor Energy Lab Co Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378183A (en) * 1976-12-22 1978-07-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS5840852A (ja) * 1981-09-03 1983-03-09 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS5874067A (ja) * 1981-10-29 1983-05-04 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480968A (ja) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
US8642426B2 (en) 2009-03-25 2014-02-04 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8319293B2 (en) 2009-03-25 2012-11-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
US9484268B2 (en) 2009-08-11 2016-11-01 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
JP2011061181A (ja) * 2009-08-11 2011-03-24 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
US9059309B2 (en) 2009-08-11 2015-06-16 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US8558317B2 (en) 2009-08-11 2013-10-15 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US8441066B2 (en) 2009-09-16 2013-05-14 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
JP2011086900A (ja) * 2009-09-16 2011-04-28 Unisantis Electronics Japan Ltd 半導体装置
TWI422011B (zh) * 2009-10-01 2014-01-01 Unisantis Elect Singapore Pte 半導體裝置
JP2011077437A (ja) * 2009-10-01 2011-04-14 Unisantis Electronics Japan Ltd 半導体装置
KR101203433B1 (ko) * 2009-10-01 2012-11-23 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치
EP2306507A3 (en) * 2009-10-01 2012-06-13 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
CN102034872A (zh) * 2009-10-01 2011-04-27 日本优尼山帝斯电子株式会社 半导体器件
JP2010232631A (ja) * 2009-12-10 2010-10-14 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
JP2011216657A (ja) * 2010-03-31 2011-10-27 Unisantis Electronics Japan Ltd 半導体装置
US9153697B2 (en) 2010-06-15 2015-10-06 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor (SGT) structure
US9035384B2 (en) 2011-12-19 2015-05-19 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9245889B2 (en) 2011-12-19 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9362353B2 (en) 2011-12-19 2016-06-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9478545B2 (en) 2011-12-19 2016-10-25 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9748244B2 (en) 2011-12-19 2017-08-29 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US9806163B2 (en) 2011-12-19 2017-10-31 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device having an nMOS SGT and a pMOS SGT
JP2013012765A (ja) * 2012-08-29 2013-01-17 Unisantis Electronics Singapore Pte Ltd 半導体装置
JP2013058773A (ja) * 2012-10-26 2013-03-28 Unisantis Electronics Singapore Pte Ltd 半導体装置
JP2014140053A (ja) * 2014-02-27 2014-07-31 Unisantis Electronics Singapore Pte Ltd 半導体装置
CN107145407A (zh) * 2017-05-16 2017-09-08 成都汇智远景科技有限公司 一种对数据进行本地备份的方法
CN107145407B (zh) * 2017-05-16 2020-10-27 中林云信(上海)网络技术有限公司 一种对数据进行本地备份的方法

Also Published As

Publication number Publication date
JPH0527267B2 (enrdf_load_stackoverflow) 1993-04-20

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