JPH0527267B2 - - Google Patents

Info

Publication number
JPH0527267B2
JPH0527267B2 JP58177957A JP17795783A JPH0527267B2 JP H0527267 B2 JPH0527267 B2 JP H0527267B2 JP 58177957 A JP58177957 A JP 58177957A JP 17795783 A JP17795783 A JP 17795783A JP H0527267 B2 JPH0527267 B2 JP H0527267B2
Authority
JP
Japan
Prior art keywords
low resistance
region
protrusion
conductivity type
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58177957A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6070757A (ja
Inventor
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58177957A priority Critical patent/JPS6070757A/ja
Publication of JPS6070757A publication Critical patent/JPS6070757A/ja
Publication of JPH0527267B2 publication Critical patent/JPH0527267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58177957A 1983-09-28 1983-09-28 半導体集積回路 Granted JPS6070757A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58177957A JPS6070757A (ja) 1983-09-28 1983-09-28 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58177957A JPS6070757A (ja) 1983-09-28 1983-09-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS6070757A JPS6070757A (ja) 1985-04-22
JPH0527267B2 true JPH0527267B2 (enrdf_load_stackoverflow) 1993-04-20

Family

ID=16040033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58177957A Granted JPS6070757A (ja) 1983-09-28 1983-09-28 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS6070757A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480968A (ja) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
SG165252A1 (en) 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP5032532B2 (ja) 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) * 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5356970B2 (ja) * 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5006375B2 (ja) * 2009-12-10 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP2011216657A (ja) * 2010-03-31 2011-10-27 Unisantis Electronics Japan Ltd 半導体装置
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
JP5312656B2 (ja) * 2012-08-29 2013-10-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5491602B2 (ja) * 2012-10-26 2014-05-14 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5689193B2 (ja) * 2014-02-27 2015-03-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN107145407B (zh) * 2017-05-16 2020-10-27 中林云信(上海)网络技术有限公司 一种对数据进行本地备份的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5378183A (en) * 1976-12-22 1978-07-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5574174A (en) * 1978-11-30 1980-06-04 Toshiba Corp Interpolation type insulating gate field effect transistor
JPS5840852A (ja) * 1981-09-03 1983-03-09 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JP2564501B2 (ja) * 1981-10-29 1996-12-18 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPS6070757A (ja) 1985-04-22

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