JPS6129148B2 - - Google Patents

Info

Publication number
JPS6129148B2
JPS6129148B2 JP53147271A JP14727178A JPS6129148B2 JP S6129148 B2 JPS6129148 B2 JP S6129148B2 JP 53147271 A JP53147271 A JP 53147271A JP 14727178 A JP14727178 A JP 14727178A JP S6129148 B2 JPS6129148 B2 JP S6129148B2
Authority
JP
Japan
Prior art keywords
misfet
complementary
gate
channel
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53147271A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5574174A (en
Inventor
Tsuneo Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14727178A priority Critical patent/JPS5574174A/ja
Publication of JPS5574174A publication Critical patent/JPS5574174A/ja
Publication of JPS6129148B2 publication Critical patent/JPS6129148B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14727178A 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor Granted JPS5574174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14727178A JPS5574174A (en) 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14727178A JPS5574174A (en) 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5574174A JPS5574174A (en) 1980-06-04
JPS6129148B2 true JPS6129148B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=15426428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14727178A Granted JPS5574174A (en) 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5574174A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752166A (en) * 1980-09-13 1982-03-27 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS5752165A (en) * 1980-09-13 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS58116770A (ja) * 1981-12-29 1983-07-12 Matsushita Electric Ind Co Ltd 半導体装置
JPS59222956A (ja) * 1983-06-01 1984-12-14 Hitachi Ltd 半導体装置
JPS6070757A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPS5574174A (en) 1980-06-04

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