JPS5574174A - Interpolation type insulating gate field effect transistor - Google Patents

Interpolation type insulating gate field effect transistor

Info

Publication number
JPS5574174A
JPS5574174A JP14727178A JP14727178A JPS5574174A JP S5574174 A JPS5574174 A JP S5574174A JP 14727178 A JP14727178 A JP 14727178A JP 14727178 A JP14727178 A JP 14727178A JP S5574174 A JPS5574174 A JP S5574174A
Authority
JP
Japan
Prior art keywords
layer
substrate
gate
field effect
interpolation type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14727178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129148B2 (enrdf_load_stackoverflow
Inventor
Tsuneo Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14727178A priority Critical patent/JPS5574174A/ja
Publication of JPS5574174A publication Critical patent/JPS5574174A/ja
Publication of JPS6129148B2 publication Critical patent/JPS6129148B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14727178A 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor Granted JPS5574174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14727178A JPS5574174A (en) 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14727178A JPS5574174A (en) 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5574174A true JPS5574174A (en) 1980-06-04
JPS6129148B2 JPS6129148B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=15426428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14727178A Granted JPS5574174A (en) 1978-11-30 1978-11-30 Interpolation type insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5574174A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752165A (en) * 1980-09-13 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5752166A (en) * 1980-09-13 1982-03-27 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS58116770A (ja) * 1981-12-29 1983-07-12 Matsushita Electric Ind Co Ltd 半導体装置
JPS59222956A (ja) * 1983-06-01 1984-12-14 Hitachi Ltd 半導体装置
JPS6070757A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 半導体集積回路

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752165A (en) * 1980-09-13 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5752166A (en) * 1980-09-13 1982-03-27 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS5799780A (en) * 1980-12-11 1982-06-21 Mitsubishi Electric Corp Semiconductor device
JPS58116770A (ja) * 1981-12-29 1983-07-12 Matsushita Electric Ind Co Ltd 半導体装置
JPS59222956A (ja) * 1983-06-01 1984-12-14 Hitachi Ltd 半導体装置
JPS6070757A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 半導体集積回路

Also Published As

Publication number Publication date
JPS6129148B2 (enrdf_load_stackoverflow) 1986-07-04

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