JPS6054462A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6054462A
JPS6054462A JP58163916A JP16391683A JPS6054462A JP S6054462 A JPS6054462 A JP S6054462A JP 58163916 A JP58163916 A JP 58163916A JP 16391683 A JP16391683 A JP 16391683A JP S6054462 A JPS6054462 A JP S6054462A
Authority
JP
Japan
Prior art keywords
film
aluminum
thickness
gold
purple
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163916A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241905B2 (enExample
Inventor
Toru Takeuchi
竹内 透
Kiyoshi Watabe
渡部 潔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58163916A priority Critical patent/JPS6054462A/ja
Publication of JPS6054462A publication Critical patent/JPS6054462A/ja
Publication of JPH0241905B2 publication Critical patent/JPH0241905B2/ja
Granted legal-status Critical Current

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Classifications

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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
JP58163916A 1983-09-05 1983-09-05 半導体装置 Granted JPS6054462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163916A JPS6054462A (ja) 1983-09-05 1983-09-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163916A JPS6054462A (ja) 1983-09-05 1983-09-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS6054462A true JPS6054462A (ja) 1985-03-28
JPH0241905B2 JPH0241905B2 (enExample) 1990-09-19

Family

ID=15783256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163916A Granted JPS6054462A (ja) 1983-09-05 1983-09-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS6054462A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262930U (enExample) * 1988-10-26 1990-05-10
JP2010157683A (ja) * 2008-12-03 2010-07-15 Renesas Technology Corp 半導体集積回路装置
JP2016028410A (ja) * 2014-07-09 2016-02-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3518277A4 (en) * 2016-09-21 2020-04-08 Shindengen Electric Manufacturing Co., Ltd. SEMICONDUCTOR COMPONENT

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192179A (en) * 1975-02-10 1976-08-12 Bisaipataanno keiseihoho
JPS5192172A (en) * 1975-02-10 1976-08-12 Denkyokuhyomen oo taishokuseihogomaku no keiseihoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192179A (en) * 1975-02-10 1976-08-12 Bisaipataanno keiseihoho
JPS5192172A (en) * 1975-02-10 1976-08-12 Denkyokuhyomen oo taishokuseihogomaku no keiseihoho

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262930U (enExample) * 1988-10-26 1990-05-10
JP2010157683A (ja) * 2008-12-03 2010-07-15 Renesas Technology Corp 半導体集積回路装置
US9466559B2 (en) 2008-12-03 2016-10-11 Renesas Electronics Corporation Semiconductor integrated circuit device
US10818620B2 (en) 2008-12-03 2020-10-27 Renesas Electronics Corporation Semiconductor integrated circuit device
JP2016028410A (ja) * 2014-07-09 2016-02-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3518277A4 (en) * 2016-09-21 2020-04-08 Shindengen Electric Manufacturing Co., Ltd. SEMICONDUCTOR COMPONENT
US10651038B2 (en) 2016-09-21 2020-05-12 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device

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