JPS6054462A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6054462A JPS6054462A JP58163916A JP16391683A JPS6054462A JP S6054462 A JPS6054462 A JP S6054462A JP 58163916 A JP58163916 A JP 58163916A JP 16391683 A JP16391683 A JP 16391683A JP S6054462 A JPS6054462 A JP S6054462A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- thickness
- gold
- purple
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
(Jl) 発明の技術分野
本発明は半導体装置のうち、特に電極構造に関する。
(b) 従来技術と問題点
半導体集積回路(IC)において、トランジスタ素子の
エミッタ電極、ベース電極、コレクタ電極、ゲート電極
、ソース電極、ドレイン電極あるいはその他の電極とそ
れらからの配線は、一般にアルミニウム膜が用いられ、
特にワイヤーボンディングするためのポンディングパッ
ド(電極パッド)部分は殆どすべてアルミニウム膜又は
アルミニウム合金膜で形成されている。且つ、電極バン
ドと半導体容器のリード端子とを接続するためのボンデ
ィングワイヤーは20〜30μmφの金線が一般に用い
られる。ボンディングワイヤーとしては、その他にアル
ミニウム線もよく用いられているが、金線の方がボンデ
ィング性が良くて、配線作業(ネールヘッドボンディン
グ)も容易であるから、金線が汎用されている現状であ
る。
エミッタ電極、ベース電極、コレクタ電極、ゲート電極
、ソース電極、ドレイン電極あるいはその他の電極とそ
れらからの配線は、一般にアルミニウム膜が用いられ、
特にワイヤーボンディングするためのポンディングパッ
ド(電極パッド)部分は殆どすべてアルミニウム膜又は
アルミニウム合金膜で形成されている。且つ、電極バン
ドと半導体容器のリード端子とを接続するためのボンデ
ィングワイヤーは20〜30μmφの金線が一般に用い
られる。ボンディングワイヤーとしては、その他にアル
ミニウム線もよく用いられているが、金線の方がボンデ
ィング性が良くて、配線作業(ネールヘッドボンディン
グ)も容易であるから、金線が汎用されている現状であ
る。
第1図にその電極パッド部の断面図を図示しており、1
は半導体基板、2はアルミニウム膜(電極パッド)、3
は金線、4は絶縁膜である。
は半導体基板、2はアルミニウム膜(電極パッド)、3
は金線、4は絶縁膜である。
しかしながら、このようにアルミニウム膜と金線とを接
着すれば、長時間使用した場合にパープルブレーク5を
起こし、やがては断線に至ることが知られている。パー
プルブレークとはアルミニウム(AI)と金(Au)と
が反応してAuAl2 (紫色の化合物)を生じ、コン
タクト抵抗が大きくなって破壊することで、断線する場
合は電極パッド全体が紫色に変った状態となることがあ
るために、パープルプ1/−りと称されている。
着すれば、長時間使用した場合にパープルブレーク5を
起こし、やがては断線に至ることが知られている。パー
プルブレークとはアルミニウム(AI)と金(Au)と
が反応してAuAl2 (紫色の化合物)を生じ、コン
タクト抵抗が大きくなって破壊することで、断線する場
合は電極パッド全体が紫色に変った状態となることがあ
るために、パープルプ1/−りと称されている。
一方、この、l、うなパープルブレークを避けるため、
金膜の電極バソlも名えられるが、金の微細加工はイA
ンミリングにj;るのみであり、量産面でアルミニウム
膜に劣っている。
金膜の電極バソlも名えられるが、金の微細加工はイA
ンミリングにj;るのみであり、量産面でアルミニウム
膜に劣っている。
(C1発明のIll的
本発明は、このような問題点を除去し、パープルブレー
クを発生しない電極構造を有する半導体装置を櫂案する
ものである。
クを発生しない電極構造を有する半導体装置を櫂案する
ものである。
(dl 発明の構成
その目的は、アルミニウム又はアルミニウム合金電極配
線−にに高融点金属窒化膜又は高融点金属炭化膜を介し
て金膜を被覆したパッドが設けられ、該パッドに金線が
接続された構造を有する半導体装置によって達成される
。
線−にに高融点金属窒化膜又は高融点金属炭化膜を介し
て金膜を被覆したパッドが設けられ、該パッドに金線が
接続された構造を有する半導体装置によって達成される
。
lel 発明の実施例
121! ”F 、図面を参照して実施例によって詳細
に説明する。
に説明する。
第2図は本発明にかかる一実施例の電極パッド邪の断面
図で、膜厚1.5μmのアルミニウム膜2の上に膜厚3
000人の窒化チタン(Ti N )膜6を被着し、更
にその上に膜厚3000〜6000人の金膜7を形成し
て、金膜7に金線3をボンディングしている。TiN膜
6.金膜7はいずれもスパッタ法で被着される。このよ
うな電極構造にすれば、TiN膜がバリヤ層になって^
Uと^1とを隔離して反応することがなくなり、パープ
ルブレークが発生しない。
図で、膜厚1.5μmのアルミニウム膜2の上に膜厚3
000人の窒化チタン(Ti N )膜6を被着し、更
にその上に膜厚3000〜6000人の金膜7を形成し
て、金膜7に金線3をボンディングしている。TiN膜
6.金膜7はいずれもスパッタ法で被着される。このよ
うな電極構造にすれば、TiN膜がバリヤ層になって^
Uと^1とを隔離して反応することがなくなり、パープ
ルブレークが発生しない。
実施テストによれば500℃、数時間熱処理してもパー
プルブレーク発生の兆しは見られなかった。
プルブレーク発生の兆しは見られなかった。
また、第3図は本発明にかかる他の実施例の断面図で、
アルミニウム膜2の上にTiN膜6を被着し、その上に
膜厚3000人の白金(Pt)膜8を被着し、更にその
上に膜厚3000〜6000人の金膜7を形成した電極
パッドの例である。白金膜は接着を良くするために介在
させた膜で、このような構造においても同様にパープル
ブレークが防止されることは勿論である。
アルミニウム膜2の上にTiN膜6を被着し、その上に
膜厚3000人の白金(Pt)膜8を被着し、更にその
上に膜厚3000〜6000人の金膜7を形成した電極
パッドの例である。白金膜は接着を良くするために介在
させた膜で、このような構造においても同様にパープル
ブレークが防止されることは勿論である。
上記の実施例はバリヤ層をTiN膜で形成したものであ
るが、TiN膜の代わりに炭化チタン(Ti C)を使
用しても同様となる。更に、チタン(Ti)の他にタン
グステン(W)、モリブデン(Mo) 、タンタル(T
a) 、ハフニウム(llf) 、デルコニウム(Zr
) 、ニオビニラム(Nb) 、バナジウム(V)。
るが、TiN膜の代わりに炭化チタン(Ti C)を使
用しても同様となる。更に、チタン(Ti)の他にタン
グステン(W)、モリブデン(Mo) 、タンタル(T
a) 、ハフニウム(llf) 、デルコニウム(Zr
) 、ニオビニラム(Nb) 、バナジウム(V)。
り■ム(C「)等の高融点金属の窒化物や炭化物をバリ
ヤ1@とじても同様の効果が得られる。
ヤ1@とじても同様の効果が得られる。
(fl 発明の効果
以上の説明から明らかなように、本発明によれば金線を
配線ワイヤーとした半導体装置において」lンタク1−
Ill:抗不良の心配がなくなり、半導体装置の信頼1
1を著しく向−!二することができる。
配線ワイヤーとした半導体装置において」lンタク1−
Ill:抗不良の心配がなくなり、半導体装置の信頼1
1を著しく向−!二することができる。
第11シ0.1従来の電極バンド部の断面図、第2図お
、J、び第3し1は本発明にかかる電極パッド部の断面
図である。 図中、1は半導体基板、2はアルミニウム膜。 3は金線、4ば絶縁膜、5はパープルブレーク部分、6
は窒化チタン、7は金膜、8は白金膜を示している。 第1図 第2図 第3図
、J、び第3し1は本発明にかかる電極パッド部の断面
図である。 図中、1は半導体基板、2はアルミニウム膜。 3は金線、4ば絶縁膜、5はパープルブレーク部分、6
は窒化チタン、7は金膜、8は白金膜を示している。 第1図 第2図 第3図
Claims (1)
- アルミニウム又はアルミニウム合金電極上に高融点金属
窒化膜又は高融点金属炭化膜を介して金膜を被覆したバ
ンドが設けられ、該パッドに金線が接続された構造を有
することを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58163916A JPS6054462A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58163916A JPS6054462A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6054462A true JPS6054462A (ja) | 1985-03-28 |
JPH0241905B2 JPH0241905B2 (ja) | 1990-09-19 |
Family
ID=15783256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58163916A Granted JPS6054462A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054462A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262930U (ja) * | 1988-10-26 | 1990-05-10 | ||
JP2010157683A (ja) * | 2008-12-03 | 2010-07-15 | Renesas Technology Corp | 半導体集積回路装置 |
JP2016028410A (ja) * | 2014-07-09 | 2016-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP3518277A4 (en) * | 2016-09-21 | 2020-04-08 | Shindengen Electric Manufacturing Co., Ltd. | SEMICONDUCTOR DEVICE |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5192179A (en) * | 1975-02-10 | 1976-08-12 | Bisaipataanno keiseihoho | |
JPS5192172A (en) * | 1975-02-10 | 1976-08-12 | Denkyokuhyomen oo taishokuseihogomaku no keiseihoho |
-
1983
- 1983-09-05 JP JP58163916A patent/JPS6054462A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5192179A (en) * | 1975-02-10 | 1976-08-12 | Bisaipataanno keiseihoho | |
JPS5192172A (en) * | 1975-02-10 | 1976-08-12 | Denkyokuhyomen oo taishokuseihogomaku no keiseihoho |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0262930U (ja) * | 1988-10-26 | 1990-05-10 | ||
JP2010157683A (ja) * | 2008-12-03 | 2010-07-15 | Renesas Technology Corp | 半導体集積回路装置 |
US9466559B2 (en) | 2008-12-03 | 2016-10-11 | Renesas Electronics Corporation | Semiconductor integrated circuit device |
US10818620B2 (en) | 2008-12-03 | 2020-10-27 | Renesas Electronics Corporation | Semiconductor integrated circuit device |
JP2016028410A (ja) * | 2014-07-09 | 2016-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
EP3518277A4 (en) * | 2016-09-21 | 2020-04-08 | Shindengen Electric Manufacturing Co., Ltd. | SEMICONDUCTOR DEVICE |
US10651038B2 (en) | 2016-09-21 | 2020-05-12 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0241905B2 (ja) | 1990-09-19 |
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