JPS6054462A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6054462A
JPS6054462A JP58163916A JP16391683A JPS6054462A JP S6054462 A JPS6054462 A JP S6054462A JP 58163916 A JP58163916 A JP 58163916A JP 16391683 A JP16391683 A JP 16391683A JP S6054462 A JPS6054462 A JP S6054462A
Authority
JP
Japan
Prior art keywords
film
aluminum
thickness
gold
purple
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163916A
Other languages
English (en)
Other versions
JPH0241905B2 (ja
Inventor
Toru Takeuchi
竹内　透
Kiyoshi Watabe
渡部　潔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58163916A priority Critical patent/JPS6054462A/ja
Publication of JPS6054462A publication Critical patent/JPS6054462A/ja
Publication of JPH0241905B2 publication Critical patent/JPH0241905B2/ja
Granted legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （Ｊｌ）　発明の技術分野 本発明は半導体装置のうち、特に電極構造に関する。
（ｂ）　従来技術と問題点 半導体集積回路（ＩＣ）において、トランジスタ素子の
エミッタ電極、ベース電極、コレクタ電極、ゲート電極
、ソース電極、ドレイン電極あるいはその他の電極とそ
れらからの配線は、一般にアルミニウム膜が用いられ、
特にワイヤーボンディングするためのポンディングパッ
ド（電極パッド）部分は殆どすべてアルミニウム膜又は
アルミニウム合金膜で形成されている。且つ、電極バン
ドと半導体容器のリード端子とを接続するためのボンデ
ィングワイヤーは２０〜３０μｍφの金線が一般に用い
られる。ボンディングワイヤーとしては、その他にアル
ミニウム線もよく用いられているが、金線の方がボンデ
ィング性が良くて、配線作業（ネールヘッドボンディン
グ）も容易であるから、金線が汎用されている現状であ
る。
第１図にその電極パッド部の断面図を図示しており、１
は半導体基板、２はアルミニウム膜（電極パッド）、３
は金線、４は絶縁膜である。
しかしながら、このようにアルミニウム膜と金線とを接
着すれば、長時間使用した場合にパープルブレーク５を
起こし、やがては断線に至ることが知られている。パー
プルブレークとはアルミニウム（ＡＩ）と金（Ａｕ）と
が反応してＡｕＡｌ２　（紫色の化合物）を生じ、コン
タクト抵抗が大きくなって破壊することで、断線する場
合は電極パッド全体が紫色に変った状態となることがあ
るために、パープルプ１／−りと称されている。
一方、この、ｌ、うなパープルブレークを避けるため、
金膜の電極バソｌも名えられるが、金の微細加工はイＡ
ンミリングにｊ；るのみであり、量産面でアルミニウム
膜に劣っている。
（Ｃ１発明のＩｌｌ的 本発明は、このような問題点を除去し、パープルブレー
クを発生しない電極構造を有する半導体装置を櫂案する
ものである。
（ｄｌ　発明の構成 その目的は、アルミニウム又はアルミニウム合金電極配
線−にに高融点金属窒化膜又は高融点金属炭化膜を介し
て金膜を被覆したパッドが設けられ、該パッドに金線が
接続された構造を有する半導体装置によって達成される
。
ｌｅｌ　発明の実施例 １２１！　”Ｆ　、図面を参照して実施例によって詳細
に説明する。
第２図は本発明にかかる一実施例の電極パッド邪の断面
図で、膜厚１．５μｍのアルミニウム膜２の上に膜厚３
０００人の窒化チタン（Ｔｉ　Ｎ　）膜６を被着し、更
にその上に膜厚３０００〜６０００人の金膜７を形成し
て、金膜７に金線３をボンディングしている。ＴｉＮ膜
６．金膜７はいずれもスパッタ法で被着される。このよ
うな電極構造にすれば、ＴｉＮ膜がバリヤ層になって＾
Ｕと＾１とを隔離して反応することがなくなり、パープ
ルブレークが発生しない。
実施テストによれば５００℃、数時間熱処理してもパー
プルブレーク発生の兆しは見られなかった。
また、第３図は本発明にかかる他の実施例の断面図で、
アルミニウム膜２の上にＴｉＮ膜６を被着し、その上に
膜厚３０００人の白金（Ｐｔ）膜８を被着し、更にその
上に膜厚３０００〜６０００人の金膜７を形成した電極
パッドの例である。白金膜は接着を良くするために介在
させた膜で、このような構造においても同様にパープル
ブレークが防止されることは勿論である。
上記の実施例はバリヤ層をＴｉＮ膜で形成したものであ
るが、ＴｉＮ膜の代わりに炭化チタン（Ｔｉ　Ｃ）を使
用しても同様となる。更に、チタン（Ｔｉ）の他にタン
グステン（Ｗ）、モリブデン（Ｍｏ）　、タンタル（Ｔ
ａ）　、ハフニウム（ｌｌｆ）　、デルコニウム（Ｚｒ
）　、ニオビニラム（Ｎｂ）　、バナジウム（Ｖ）。
り■ム（Ｃ「）等の高融点金属の窒化物や炭化物をバリ
ヤ１＠とじても同様の効果が得られる。
（ｆｌ　発明の効果 以上の説明から明らかなように、本発明によれば金線を
配線ワイヤーとした半導体装置において」ｌンタク１−
Ｉｌｌ：抗不良の心配がなくなり、半導体装置の信頼１
１を著しく向−！二することができる。
【図面の簡単な説明】
第１１シ０．１従来の電極バンド部の断面図、第２図お
、Ｊ、び第３し１は本発明にかかる電極パッド部の断面
図である。 図中、１は半導体基板、２はアルミニウム膜。 ３は金線、４ば絶縁膜、５はパープルブレーク部分、６
は窒化チタン、７は金膜、８は白金膜を示している。 第１図 第２図 第３図

Claims (1)

    【特許請求の範囲】
  1. アルミニウム又はアルミニウム合金電極上に高融点金属
    窒化膜又は高融点金属炭化膜を介して金膜を被覆したバ
    ンドが設けられ、該パッドに金線が接続された構造を有
    することを特徴とする半導体装置。
JP58163916A 1983-09-05 1983-09-05 半導体装置 Granted JPS6054462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163916A JPS6054462A (ja) 1983-09-05 1983-09-05 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163916A JPS6054462A (ja) 1983-09-05 1983-09-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS6054462A true JPS6054462A (ja) 1985-03-28
JPH0241905B2 JPH0241905B2 (ja) 1990-09-19

Family

ID=15783256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163916A Granted JPS6054462A (ja) 1983-09-05 1983-09-05 半導体装置

Country Status (1)

Country Link
JP (1) JPS6054462A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262930U (ja) * 1988-10-26 1990-05-10
JP2010157683A (ja) * 2008-12-03 2010-07-15 Renesas Technology Corp 半導体集積回路装置
JP2016028410A (ja) * 2014-07-09 2016-02-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3518277A4 (en) * 2016-09-21 2020-04-08 Shindengen Electric Manufacturing Co., Ltd. SEMICONDUCTOR DEVICE

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192179A (en) * 1975-02-10 1976-08-12 Bisaipataanno keiseihoho
JPS5192172A (en) * 1975-02-10 1976-08-12 Denkyokuhyomen oo taishokuseihogomaku no keiseihoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192179A (en) * 1975-02-10 1976-08-12 Bisaipataanno keiseihoho
JPS5192172A (en) * 1975-02-10 1976-08-12 Denkyokuhyomen oo taishokuseihogomaku no keiseihoho

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262930U (ja) * 1988-10-26 1990-05-10
JP2010157683A (ja) * 2008-12-03 2010-07-15 Renesas Technology Corp 半導体集積回路装置
US9466559B2 (en) 2008-12-03 2016-10-11 Renesas Electronics Corporation Semiconductor integrated circuit device
US10818620B2 (en) 2008-12-03 2020-10-27 Renesas Electronics Corporation Semiconductor integrated circuit device
JP2016028410A (ja) * 2014-07-09 2016-02-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3518277A4 (en) * 2016-09-21 2020-04-08 Shindengen Electric Manufacturing Co., Ltd. SEMICONDUCTOR DEVICE
US10651038B2 (en) 2016-09-21 2020-05-12 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device

Also Published As

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