JPS6041047A - 堆積膜形成法 - Google Patents
堆積膜形成法Info
- Publication number
- JPS6041047A JPS6041047A JP58149366A JP14936683A JPS6041047A JP S6041047 A JPS6041047 A JP S6041047A JP 58149366 A JP58149366 A JP 58149366A JP 14936683 A JP14936683 A JP 14936683A JP S6041047 A JPS6041047 A JP S6041047A
- Authority
- JP
- Japan
- Prior art keywords
- space
- deposited film
- decomposition
- layer
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58149366A JPS6041047A (ja) | 1983-08-16 | 1983-08-16 | 堆積膜形成法 |
DE19843429899 DE3429899A1 (de) | 1983-08-16 | 1984-08-14 | Verfahren zur bildung eines abscheidungsfilms |
GB08420725A GB2148328B (en) | 1983-08-16 | 1984-08-15 | Chemical vapour deposition process |
FR848412872A FR2555614B1 (fr) | 1983-08-16 | 1984-08-16 | Procede pour former un film sur un substrat par decomposition en phase vapeur |
US07/161,386 US4835005A (en) | 1983-08-16 | 1988-02-22 | Process for forming deposition film |
US08/469,676 US5910342A (en) | 1983-08-16 | 1995-06-06 | Process for forming deposition film |
US08/477,269 US5645947A (en) | 1983-08-16 | 1995-06-07 | Silicon-containing deposited film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58149366A JPS6041047A (ja) | 1983-08-16 | 1983-08-16 | 堆積膜形成法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62136453A Division JPH0674503B2 (ja) | 1987-05-30 | 1987-05-30 | 光導電部材 |
JP62136454A Division JPS63100183A (ja) | 1987-05-30 | 1987-05-30 | 堆積膜形成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6041047A true JPS6041047A (ja) | 1985-03-04 |
JPH0360917B2 JPH0360917B2 (de) | 1991-09-18 |
Family
ID=15473564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58149366A Granted JPS6041047A (ja) | 1983-08-16 | 1983-08-16 | 堆積膜形成法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6041047A (de) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042765A (ja) * | 1983-08-17 | 1985-03-07 | Canon Inc | 堆積膜形成法 |
JPS61179869A (ja) * | 1985-02-04 | 1986-08-12 | Canon Inc | 堆積膜形成法 |
JPS61179870A (ja) * | 1985-02-05 | 1986-08-12 | Canon Inc | 堆積膜形成法 |
JPS61179868A (ja) * | 1985-02-05 | 1986-08-12 | Canon Inc | 堆積膜形成法 |
JPS61222120A (ja) * | 1985-03-27 | 1986-10-02 | Canon Inc | 堆積膜形成法 |
JPS61237418A (ja) * | 1985-04-12 | 1986-10-22 | Canon Inc | 堆積膜形成法 |
JPS61276977A (ja) * | 1985-05-30 | 1986-12-06 | Canon Inc | 堆積膜形成法 |
JPS61276976A (ja) * | 1985-05-31 | 1986-12-06 | Res Dev Corp Of Japan | 中間状態種を用いた熱cvd法によるシリコン含有高品質薄膜の製造方法及び装置 |
JPS6235521A (ja) * | 1985-08-09 | 1987-02-16 | Hitachi Ltd | 表面処理装置 |
JPS6290924A (ja) * | 1985-09-26 | 1987-04-25 | Nobuo Mikoshiba | 堆積膜形成法及びこれに用いる装置 |
JPS62177911A (ja) * | 1986-01-31 | 1987-08-04 | Canon Inc | 堆積膜形成装置 |
JPS62205361A (ja) * | 1986-03-05 | 1987-09-09 | Canon Inc | 電子写真用光受容部材及びその製造方法 |
JPS62216220A (ja) * | 1986-03-17 | 1987-09-22 | Sumitomo Electric Ind Ltd | 非晶質半導体薄膜の形成方法 |
JPS62223762A (ja) * | 1986-03-25 | 1987-10-01 | Canon Inc | 電子写真用光受容部材及びその製造方法 |
JPS6357778A (ja) * | 1986-08-28 | 1988-03-12 | Canon Inc | 堆積膜製造装置 |
JPS63141920A (ja) * | 1986-12-04 | 1988-06-14 | Lion Corp | 歯磨組成物 |
US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
US5178905A (en) * | 1988-11-24 | 1993-01-12 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state |
JPH06196422A (ja) * | 1992-12-25 | 1994-07-15 | Nec Corp | 半導体結晶成長装置および成長法 |
JPH08238710A (ja) * | 1994-12-23 | 1996-09-17 | Saint Gobain Vitrage | 透明基材及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143980A (en) * | 1976-05-25 | 1977-11-30 | Nec Corp | Equipment for plasma deposition |
JPS5767938A (en) * | 1980-10-16 | 1982-04-24 | Canon Inc | Production of photoconductive member |
-
1983
- 1983-08-16 JP JP58149366A patent/JPS6041047A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143980A (en) * | 1976-05-25 | 1977-11-30 | Nec Corp | Equipment for plasma deposition |
JPS5767938A (en) * | 1980-10-16 | 1982-04-24 | Canon Inc | Production of photoconductive member |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042765A (ja) * | 1983-08-17 | 1985-03-07 | Canon Inc | 堆積膜形成法 |
JPH0372710B2 (de) * | 1983-08-17 | 1991-11-19 | Canon Kk | |
JPS61179869A (ja) * | 1985-02-04 | 1986-08-12 | Canon Inc | 堆積膜形成法 |
JPS61179870A (ja) * | 1985-02-05 | 1986-08-12 | Canon Inc | 堆積膜形成法 |
JPS61179868A (ja) * | 1985-02-05 | 1986-08-12 | Canon Inc | 堆積膜形成法 |
JPS61222120A (ja) * | 1985-03-27 | 1986-10-02 | Canon Inc | 堆積膜形成法 |
JPS61237418A (ja) * | 1985-04-12 | 1986-10-22 | Canon Inc | 堆積膜形成法 |
JPS61276977A (ja) * | 1985-05-30 | 1986-12-06 | Canon Inc | 堆積膜形成法 |
JPS61276976A (ja) * | 1985-05-31 | 1986-12-06 | Res Dev Corp Of Japan | 中間状態種を用いた熱cvd法によるシリコン含有高品質薄膜の製造方法及び装置 |
JPH0365434B2 (de) * | 1985-05-31 | 1991-10-11 | ||
JPS6235521A (ja) * | 1985-08-09 | 1987-02-16 | Hitachi Ltd | 表面処理装置 |
JPH0682642B2 (ja) * | 1985-08-09 | 1994-10-19 | 株式会社日立製作所 | 表面処理装置 |
JPS6290924A (ja) * | 1985-09-26 | 1987-04-25 | Nobuo Mikoshiba | 堆積膜形成法及びこれに用いる装置 |
JPS62177911A (ja) * | 1986-01-31 | 1987-08-04 | Canon Inc | 堆積膜形成装置 |
JPS62205361A (ja) * | 1986-03-05 | 1987-09-09 | Canon Inc | 電子写真用光受容部材及びその製造方法 |
JPS62216220A (ja) * | 1986-03-17 | 1987-09-22 | Sumitomo Electric Ind Ltd | 非晶質半導体薄膜の形成方法 |
JPS62223762A (ja) * | 1986-03-25 | 1987-10-01 | Canon Inc | 電子写真用光受容部材及びその製造方法 |
JPS6357778A (ja) * | 1986-08-28 | 1988-03-12 | Canon Inc | 堆積膜製造装置 |
US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
JPS63141920A (ja) * | 1986-12-04 | 1988-06-14 | Lion Corp | 歯磨組成物 |
US5178905A (en) * | 1988-11-24 | 1993-01-12 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state |
JPH06196422A (ja) * | 1992-12-25 | 1994-07-15 | Nec Corp | 半導体結晶成長装置および成長法 |
JPH08238710A (ja) * | 1994-12-23 | 1996-09-17 | Saint Gobain Vitrage | 透明基材及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0360917B2 (de) | 1991-09-18 |
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