JPS6020908B2 - Ｍｏｓ二重多結晶集積回路の製造方法 - Google Patents
Ｍｏｓ二重多結晶集積回路の製造方法Info
- Publication number
- JPS6020908B2 JPS6020908B2 JP51113550A JP11355076A JPS6020908B2 JP S6020908 B2 JPS6020908 B2 JP S6020908B2 JP 51113550 A JP51113550 A JP 51113550A JP 11355076 A JP11355076 A JP 11355076A JP S6020908 B2 JPS6020908 B2 JP S6020908B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon layer
- layer
- gate
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000009977 dual effect Effects 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 25
- 238000007667 floating Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000000873 masking effect Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62685975A | 1975-10-29 | 1975-10-29 | |
| US626859 | 1996-04-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5259585A JPS5259585A (en) | 1977-05-17 |
| JPS6020908B2 true JPS6020908B2 (ja) | 1985-05-24 |
Family
ID=24512170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51113550A Expired JPS6020908B2 (ja) | 1975-10-29 | 1976-09-21 | Ｍｏｓ二重多結晶集積回路の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6020908B2 (lm) |
| DE (1) | DE2645014C3 (lm) |
| FR (1) | FR2330146A1 (lm) |
| GB (1) | GB1540450A (lm) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1089299B (it) | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| JPS5419372A (en) * | 1977-07-14 | 1979-02-14 | Nec Corp | Production of semiconductor memory |
| JPS54109785A (en) * | 1978-02-16 | 1979-08-28 | Nec Corp | Semiconductor device |
| US4288256A (en) * | 1977-12-23 | 1981-09-08 | International Business Machines Corporation | Method of making FET containing stacked gates |
| JPS5550667A (en) * | 1978-10-09 | 1980-04-12 | Fujitsu Ltd | Method of fabricating double gate mos-type integrated circuit |
| JPS55105373A (en) * | 1978-12-04 | 1980-08-12 | Mostek Corp | Metal oxide semiconductor transistor and method of fabricating same |
| US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
| DE3037744A1 (de) * | 1980-10-06 | 1982-05-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik |
| FR2468185A1 (fr) * | 1980-10-17 | 1981-04-30 | Intel Corp | Procede de fabrication d'une matrice de memoire electriquement programmable a haute densite |
| JPS5787176A (en) * | 1980-11-20 | 1982-05-31 | Seiko Epson Corp | Fabrication of semiconductor device |
| JPS57106171A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4490900A (en) * | 1982-01-29 | 1985-01-01 | Seeq Technology, Inc. | Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein |
| IT1218344B (it) * | 1983-03-31 | 1990-04-12 | Ates Componenti Elettron | Processo per l'autoallineamento di un doppio strato di silicio policristallino,in un dispositivo a circuito integrato,mediante un' operazione di ossidazione |
| JPS60187852A (ja) * | 1984-03-07 | 1985-09-25 | Shimadzu Corp | Νｍｒ ｃｔ装置における静磁場発生装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3719866A (en) * | 1970-12-03 | 1973-03-06 | Ncr | Semiconductor memory device |
| DE2139631C3 (de) * | 1971-08-07 | 1979-05-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen eines Halbleiterbauelements, bei dem der Rand einer Diffusionszone auf den Rand einer polykristallinen Siliciumelektrode ausgerichtet ist |
| GB1360770A (en) * | 1972-05-30 | 1974-07-24 | Westinghouse Electric Corp | N-channel mos transistor |
| JPS5024084A (lm) * | 1973-07-05 | 1975-03-14 |
-
1976
- 1976-08-31 GB GB35950/76A patent/GB1540450A/en not_active Expired
- 1976-09-21 FR FR7628293A patent/FR2330146A1/fr active Granted
- 1976-09-21 JP JP51113550A patent/JPS6020908B2/ja not_active Expired
- 1976-10-06 DE DE2645014A patent/DE2645014C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2645014A1 (de) | 1977-05-12 |
| DE2645014C3 (de) | 1980-02-28 |
| DE2645014B2 (de) | 1979-06-07 |
| GB1540450A (en) | 1979-02-14 |
| FR2330146A1 (fr) | 1977-05-27 |
| JPS5259585A (en) | 1977-05-17 |
| FR2330146B1 (lm) | 1982-08-27 |
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