JPS60136259A - 電界効果型トランジスタの製造方法 - Google Patents

電界効果型トランジスタの製造方法

Info

Publication number
JPS60136259A
JPS60136259A JP58248972A JP24897283A JPS60136259A JP S60136259 A JPS60136259 A JP S60136259A JP 58248972 A JP58248972 A JP 58248972A JP 24897283 A JP24897283 A JP 24897283A JP S60136259 A JPS60136259 A JP S60136259A
Authority
JP
Japan
Prior art keywords
film
annealing
manufacturing
polycrystalline silicon
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58248972A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0457098B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hisao Hayashi
久雄 林
Hisayoshi Yamoto
久良 矢元
Chiaki Sakai
酒井　千秋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58248972A priority Critical patent/JPS60136259A/ja
Priority to CA000470776A priority patent/CA1218470A/en
Priority to DE8484116301T priority patent/DE3485817T2/de
Priority to EP84116301A priority patent/EP0152624B1/en
Priority to KR1019840008292A priority patent/KR920007786B1/ko
Publication of JPS60136259A publication Critical patent/JPS60136259A/ja
Priority to US07/703,057 priority patent/US5162892A/en
Publication of JPH0457098B2 publication Critical patent/JPH0457098B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP58248972A 1983-12-24 1983-12-24 電界効果型トランジスタの製造方法 Granted JPS60136259A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP58248972A JPS60136259A (ja) 1983-12-24 1983-12-24 電界効果型トランジスタの製造方法
CA000470776A CA1218470A (en) 1983-12-24 1984-12-21 Semiconductor device with polycrystalline silicon active region and ic including semiconductor device
DE8484116301T DE3485817T2 (de) 1983-12-24 1984-12-24 Verfahren zur herstellung einer halbleiteranordnung mit einer aktiven zone aus polykristallinem silicium.
EP84116301A EP0152624B1 (en) 1983-12-24 1984-12-24 Method of manufacturing a semiconductor device having a polycristalline silicon-active region.
KR1019840008292A KR920007786B1 (ko) 1983-12-24 1984-12-24 전계효과형 트랜지스터의 제조방법
US07/703,057 US5162892A (en) 1983-12-24 1991-05-17 Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58248972A JPS60136259A (ja) 1983-12-24 1983-12-24 電界効果型トランジスタの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5251171A Division JP2508601B2 (ja) 1993-09-13 1993-09-13 電界効果型薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS60136259A true JPS60136259A (ja) 1985-07-19
JPH0457098B2 JPH0457098B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-10

Family

ID=17186123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58248972A Granted JPS60136259A (ja) 1983-12-24 1983-12-24 電界効果型トランジスタの製造方法

Country Status (2)

Country Link
JP (1) JPS60136259A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR920007786B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284562A (ja) * 1985-10-08 1987-04-18 Seiko Epson Corp 半導体装置とその製造方法
JPS62204575A (ja) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
JPS62209862A (ja) * 1986-03-10 1987-09-16 Matsushita Electric Ind Co Ltd 薄膜半導体デバイス
JPS63213933A (ja) * 1987-03-02 1988-09-06 Nec Corp 半導体装置の製造方法
JPS63237571A (ja) * 1987-03-26 1988-10-04 Seiko Epson Corp 薄膜トランジスタの製造方法
JPS63261880A (ja) * 1987-04-20 1988-10-28 Seiko Epson Corp 薄膜トランジスタの製造方法
JPS6432678A (en) * 1987-07-28 1989-02-02 Ricoh Kk Thin-film transistor
JPH01129460A (ja) * 1987-11-14 1989-05-22 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPH02155275A (ja) * 1988-12-07 1990-06-14 Fuji Xerox Co Ltd 逆スタガード型薄膜トランジスタの製造方法
JPH05136167A (ja) * 1991-09-20 1993-06-01 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JPH05218430A (ja) * 1992-02-07 1993-08-27 G T C:Kk 多結晶シリコン薄膜トランジスタおよびその製造方法
US5440168A (en) * 1993-02-22 1995-08-08 Ryoden Semiconductor System Engineering Corporation Thin-film transistor with suppressed off-current and Vth
JPH09186343A (ja) * 1996-12-09 1997-07-15 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH09270521A (ja) * 1996-12-09 1997-10-14 Seiko Epson Corp 薄膜トランジスタの製造方法
JP2000332259A (ja) * 1999-03-17 2000-11-30 Semiconductor Energy Lab Co Ltd 配線材料およびこれを用いた配線を備えた半導体装置およびその作製方法
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
WO2006025820A1 (en) * 2004-08-26 2006-03-09 Midwest Research Institute Method for passivating crystal silicon surfaces
US7541646B2 (en) 2006-03-08 2009-06-02 Mitsubishi Electric Corporation Thin film transistor device and method of manufacturing the same
US7847295B2 (en) 2007-03-15 2010-12-07 Mitsubishi Electric Corporation Thin film transistor, display device using thereof and method of manufacturing the thin film transistor and the display device
US7955975B2 (en) * 2002-04-09 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS57169248A (en) * 1981-04-13 1982-10-18 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5884466A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS59136926A (ja) * 1983-01-25 1984-08-06 Seiko Epson Corp 半導体装置の製法
JPH0338755A (ja) * 1989-07-05 1991-02-19 Nec Corp ファイル転送システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS57169248A (en) * 1981-04-13 1982-10-18 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS5884466A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS59136926A (ja) * 1983-01-25 1984-08-06 Seiko Epson Corp 半導体装置の製法
JPH0338755A (ja) * 1989-07-05 1991-02-19 Nec Corp ファイル転送システム

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284562A (ja) * 1985-10-08 1987-04-18 Seiko Epson Corp 半導体装置とその製造方法
JPS62204575A (ja) * 1986-03-05 1987-09-09 Matsushita Electric Ind Co Ltd 薄膜半導体装置およびその製造方法
JPS62209862A (ja) * 1986-03-10 1987-09-16 Matsushita Electric Ind Co Ltd 薄膜半導体デバイス
JPS63213933A (ja) * 1987-03-02 1988-09-06 Nec Corp 半導体装置の製造方法
JPS63237571A (ja) * 1987-03-26 1988-10-04 Seiko Epson Corp 薄膜トランジスタの製造方法
JPS63261880A (ja) * 1987-04-20 1988-10-28 Seiko Epson Corp 薄膜トランジスタの製造方法
JPS6432678A (en) * 1987-07-28 1989-02-02 Ricoh Kk Thin-film transistor
JPH01129460A (ja) * 1987-11-14 1989-05-22 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPH02155275A (ja) * 1988-12-07 1990-06-14 Fuji Xerox Co Ltd 逆スタガード型薄膜トランジスタの製造方法
JPH05136167A (ja) * 1991-09-20 1993-06-01 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JPH05218430A (ja) * 1992-02-07 1993-08-27 G T C:Kk 多結晶シリコン薄膜トランジスタおよびその製造方法
US5440168A (en) * 1993-02-22 1995-08-08 Ryoden Semiconductor System Engineering Corporation Thin-film transistor with suppressed off-current and Vth
US5885858A (en) * 1993-02-22 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing thin-film transistor
US6103556A (en) * 1993-02-22 2000-08-15 Mitsubishi Denki Kabushiki Kaisha Thin-film transistor and method of manufacturing the same
US6835607B2 (en) 1993-10-01 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6335555B1 (en) 1993-10-01 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a manufacturing method for the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH09186343A (ja) * 1996-12-09 1997-07-15 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH09270521A (ja) * 1996-12-09 1997-10-14 Seiko Epson Corp 薄膜トランジスタの製造方法
JP2000332259A (ja) * 1999-03-17 2000-11-30 Semiconductor Energy Lab Co Ltd 配線材料およびこれを用いた配線を備えた半導体装置およびその作製方法
US7955975B2 (en) * 2002-04-09 2011-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US11101299B2 (en) 2002-04-09 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10854642B2 (en) 2002-04-09 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10700106B2 (en) 2002-04-09 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US10527903B2 (en) 2002-05-17 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US11422423B2 (en) 2002-05-17 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2006025820A1 (en) * 2004-08-26 2006-03-09 Midwest Research Institute Method for passivating crystal silicon surfaces
US7629236B2 (en) 2004-08-26 2009-12-08 Alliance For Sustainable Energy, Llc Method for passivating crystal silicon surfaces
US7541646B2 (en) 2006-03-08 2009-06-02 Mitsubishi Electric Corporation Thin film transistor device and method of manufacturing the same
US7847295B2 (en) 2007-03-15 2010-12-07 Mitsubishi Electric Corporation Thin film transistor, display device using thereof and method of manufacturing the thin film transistor and the display device

Also Published As

Publication number Publication date
KR850005163A (ko) 1985-08-21
JPH0457098B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-09-10
KR920007786B1 (ko) 1992-09-17

Similar Documents

Publication Publication Date Title
JPS60136259A (ja) 電界効果型トランジスタの製造方法
KR100191091B1 (ko) 박막 반도체 장치와 그 제조방법
ATE39034T1 (de) Herstellung von gestapelten mos-bauelementen.
JPH0794746A (ja) 半導体装置の製造方法
JPH0395939A (ja) 半導体装置の製造方法
JP2009048199A (ja) 液晶表示装置用薄膜トランジスタ基板およびその製造方法
JP2945032B2 (ja) 薄膜トランジスタの製法
JPH077156A (ja) 電界効果型薄膜トランジスタ
JP4211085B2 (ja) 薄膜トランジスタの製造方法
JPS5965479A (ja) 薄膜トランジスタとその製造方法
JPS6146069A (ja) 半導体装置の製造方法
JP2831006B2 (ja) 薄膜トランジスタの製造方法
JPS6255965A (ja) 半導体装置の製造方法
JP3426063B2 (ja) 液晶表示装置及びその製造方法
JP3426163B2 (ja) 液晶表示装置
JPS6122669A (ja) 薄膜トランジスタ及びその製造方法
JPH113887A (ja) 薄膜トランジスタの製造方法
JP3162897B2 (ja) 薄膜トランジスタ及び薄膜トランジスタの製造方法
JPS58182243A (ja) 半導体装置の製造方法
KR100659116B1 (ko) 박막트랜지스터의 제조방법
JP3346060B2 (ja) 薄膜半導体装置の製造方法
JPS5988833A (ja) 化合物半導体の熱処理法
WO2020107671A1 (zh) 半导体组件及其制造方法
JPH05235038A (ja) 薄膜トランジスタの製造方法
JPS61248467A (ja) 薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term