JPS60128653A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS60128653A
JPS60128653A JP58236132A JP23613283A JPS60128653A JP S60128653 A JPS60128653 A JP S60128653A JP 58236132 A JP58236132 A JP 58236132A JP 23613283 A JP23613283 A JP 23613283A JP S60128653 A JPS60128653 A JP S60128653A
Authority
JP
Japan
Prior art keywords
region
semiconductor
semiconductor region
substrate
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58236132A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530073B2 (enrdf_load_stackoverflow
Inventor
Yasunori Yamaguchi
山口　泰紀
Jiro Sawada
沢田　二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58236132A priority Critical patent/JPS60128653A/ja
Priority to KR1019840007685A priority patent/KR850005155A/ko
Priority to GB08431596A priority patent/GB2151846A/en
Publication of JPS60128653A publication Critical patent/JPS60128653A/ja
Publication of JPH0530073B2 publication Critical patent/JPH0530073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
JP58236132A 1983-12-16 1983-12-16 半導体集積回路装置 Granted JPS60128653A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58236132A JPS60128653A (ja) 1983-12-16 1983-12-16 半導体集積回路装置
KR1019840007685A KR850005155A (ko) 1983-12-16 1984-12-06 고전압 파괴회로(高電壓破壞回路)를 구비한 반도체 집적회로 장치
GB08431596A GB2151846A (en) 1983-12-16 1984-12-14 A high voltage destruction-prevention circuit for a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58236132A JPS60128653A (ja) 1983-12-16 1983-12-16 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS60128653A true JPS60128653A (ja) 1985-07-09
JPH0530073B2 JPH0530073B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=16996229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58236132A Granted JPS60128653A (ja) 1983-12-16 1983-12-16 半導体集積回路装置

Country Status (3)

Country Link
JP (1) JPS60128653A (enrdf_load_stackoverflow)
KR (1) KR850005155A (enrdf_load_stackoverflow)
GB (1) GB2151846A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63304656A (ja) * 1987-05-15 1988-12-12 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 相補形金属酸化物半導体集積回路の保護システム
US20120045902A1 (en) * 2007-03-30 2012-02-23 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380A (en) * 1976-06-23 1978-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS55146975A (en) * 1979-05-03 1980-11-15 Mitsubishi Electric Corp Mos field effect type semiconductor device
JPS5640272A (en) * 1979-09-10 1981-04-16 Mitsubishi Electric Corp Semiconductor integrated circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
IT1150062B (it) * 1980-11-19 1986-12-10 Ates Componenti Elettron Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380A (en) * 1976-06-23 1978-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS55146975A (en) * 1979-05-03 1980-11-15 Mitsubishi Electric Corp Mos field effect type semiconductor device
JPS5640272A (en) * 1979-09-10 1981-04-16 Mitsubishi Electric Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63304656A (ja) * 1987-05-15 1988-12-12 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド 相補形金属酸化物半導体集積回路の保護システム
US20120045902A1 (en) * 2007-03-30 2012-02-23 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US8443756B2 (en) * 2007-03-30 2013-05-21 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Also Published As

Publication number Publication date
GB2151846A (en) 1985-07-24
GB8431596D0 (en) 1985-01-30
KR850005155A (ko) 1985-08-21
JPH0530073B2 (enrdf_load_stackoverflow) 1993-05-07

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