KR850005155A - 고전압 파괴회로(高電壓破壞回路)를 구비한 반도체 집적회로 장치 - Google Patents

고전압 파괴회로(高電壓破壞回路)를 구비한 반도체 집적회로 장치 Download PDF

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Publication number
KR850005155A
KR850005155A KR1019840007685A KR840007685A KR850005155A KR 850005155 A KR850005155 A KR 850005155A KR 1019840007685 A KR1019840007685 A KR 1019840007685A KR 840007685 A KR840007685 A KR 840007685A KR 850005155 A KR850005155 A KR 850005155A
Authority
KR
South Korea
Prior art keywords
semiconductor region
semiconductor
integrated circuit
circuit device
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019840007685A
Other languages
English (en)
Korean (ko)
Inventor
야스노리 야마꾸지 (외 1)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR850005155A publication Critical patent/KR850005155A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
KR1019840007685A 1983-12-16 1984-12-06 고전압 파괴회로(高電壓破壞回路)를 구비한 반도체 집적회로 장치 Abandoned KR850005155A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58-236132 1983-12-16
JP58236132A JPS60128653A (ja) 1983-12-16 1983-12-16 半導体集積回路装置

Publications (1)

Publication Number Publication Date
KR850005155A true KR850005155A (ko) 1985-08-21

Family

ID=16996229

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007685A Abandoned KR850005155A (ko) 1983-12-16 1984-12-06 고전압 파괴회로(高電壓破壞回路)를 구비한 반도체 집적회로 장치

Country Status (3)

Country Link
JP (1) JPS60128653A (enrdf_load_stackoverflow)
KR (1) KR850005155A (enrdf_load_stackoverflow)
GB (1) GB2151846A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1186227B (it) * 1985-12-03 1987-11-18 Sgs Microelettronica Spa Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
JPS5380A (en) * 1976-06-23 1978-01-05 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6034824B2 (ja) * 1979-05-03 1985-08-10 三菱電機株式会社 Ｍｏｓ電界効果形半導体装置
JPS5640272A (en) * 1979-09-10 1981-04-16 Mitsubishi Electric Corp Semiconductor integrated circuit
IT1150062B (it) * 1980-11-19 1986-12-10 Ates Componenti Elettron Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路

Also Published As

Publication number Publication date
GB2151846A (en) 1985-07-24
GB8431596D0 (en) 1985-01-30
JPH0530073B2 (enrdf_load_stackoverflow) 1993-05-07
JPS60128653A (ja) 1985-07-09

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19841206

PG1501 Laying open of application
PC1902 Submission of document of abandonment before decision of registration
SUBM Surrender of laid-open application requested