IT1186227B - Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos - Google Patents

Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos

Info

Publication number
IT1186227B
IT1186227B IT23077/85A IT2307785A IT1186227B IT 1186227 B IT1186227 B IT 1186227B IT 23077/85 A IT23077/85 A IT 23077/85A IT 2307785 A IT2307785 A IT 2307785A IT 1186227 B IT1186227 B IT 1186227B
Authority
IT
Italy
Prior art keywords
integrated circuit
protection device
overvoltage protection
mos type
type integrated
Prior art date
Application number
IT23077/85A
Other languages
English (en)
Other versions
IT8523077A0 (it
Inventor
Giuseppe Cappelletti
Gabriele Colli Lanzi
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT23077/85A priority Critical patent/IT1186227B/it
Publication of IT8523077A0 publication Critical patent/IT8523077A0/it
Priority to EP86116742A priority patent/EP0225586A1/en
Priority to JP61286857A priority patent/JPH0732251B2/ja
Application granted granted Critical
Publication of IT1186227B publication Critical patent/IT1186227B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
IT23077/85A 1985-12-03 1985-12-03 Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos IT1186227B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT23077/85A IT1186227B (it) 1985-12-03 1985-12-03 Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos
EP86116742A EP0225586A1 (en) 1985-12-03 1986-12-02 An overvoltage protection circuit for an integrated MOS device
JP61286857A JPH0732251B2 (ja) 1985-12-03 1986-12-03 Ｍｏｓ型集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23077/85A IT1186227B (it) 1985-12-03 1985-12-03 Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos

Publications (2)

Publication Number Publication Date
IT8523077A0 IT8523077A0 (it) 1985-12-03
IT1186227B true IT1186227B (it) 1987-11-18

Family

ID=11203526

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23077/85A IT1186227B (it) 1985-12-03 1985-12-03 Dispositivo di protezione contro le sovratensioni in ingresso per un circuito integrato di tipo mos

Country Status (3)

Country Link
EP (1) EP0225586A1 (it)
JP (1) JPH0732251B2 (it)
IT (1) IT1186227B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105472B2 (ja) * 1988-07-29 1995-11-13 株式会社東芝 入力保護回路
JPH02119262A (ja) * 1988-10-28 1990-05-07 Toshiba Corp 半導体装置
GB8911360D0 (en) * 1989-05-17 1989-07-05 Sarnoff David Res Center Electronic charge protection devices
BE1007672A3 (nl) * 1993-10-27 1995-09-12 Philips Electronics Nv Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting.
EP0688054A3 (en) * 1994-06-13 1996-06-05 Symbios Logic Inc Protection against electrostatic discharges for a semiconductor integrated circuit device
JP2822915B2 (ja) * 1995-04-03 1998-11-11 日本電気株式会社 半導体装置
EP0851552A1 (en) * 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
TW469622B (en) * 1999-09-13 2001-12-21 Koninkl Philips Electronics Nv Semiconductor device with ESD protection
CN107869932B (zh) * 2017-11-21 2020-03-17 西安航天动力技术研究所 一种用于发控设备的mos管式点火电路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1150062B (it) * 1980-11-19 1986-12-10 Ates Componenti Elettron Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS60128653A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPH0732251B2 (ja) 1995-04-10
JPS62183184A (ja) 1987-08-11
IT8523077A0 (it) 1985-12-03
EP0225586A1 (en) 1987-06-16

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