DE3581852D1 - Integrierte ueberspannungsschutzschaltung. - Google Patents

Integrierte ueberspannungsschutzschaltung.

Info

Publication number
DE3581852D1
DE3581852D1 DE8585107743T DE3581852T DE3581852D1 DE 3581852 D1 DE3581852 D1 DE 3581852D1 DE 8585107743 T DE8585107743 T DE 8585107743T DE 3581852 T DE3581852 T DE 3581852T DE 3581852 D1 DE3581852 D1 DE 3581852D1
Authority
DE
Germany
Prior art keywords
protection circuit
surge protection
integrated surge
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585107743T
Other languages
English (en)
Inventor
Peter Edwin Cottrell
William James Craig
Ronald Roy Troutman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3581852D1 publication Critical patent/DE3581852D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
DE8585107743T 1984-07-18 1985-06-24 Integrierte ueberspannungsschutzschaltung. Expired - Fee Related DE3581852D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/632,098 US4626882A (en) 1984-07-18 1984-07-18 Twin diode overvoltage protection structure

Publications (1)

Publication Number Publication Date
DE3581852D1 true DE3581852D1 (de) 1991-04-04

Family

ID=24534068

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585107743T Expired - Fee Related DE3581852D1 (de) 1984-07-18 1985-06-24 Integrierte ueberspannungsschutzschaltung.

Country Status (4)

Country Link
US (1) US4626882A (de)
EP (1) EP0168678B1 (de)
JP (1) JPS6132566A (de)
DE (1) DE3581852D1 (de)

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JPS60263461A (ja) * 1984-06-11 1985-12-26 Nec Corp 高耐圧縦形トランジスタ装置およびその製造方法
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
JPH0812918B2 (ja) * 1986-03-28 1996-02-07 株式会社東芝 半導体装置の製造方法
US5012317A (en) * 1986-04-11 1991-04-30 Texas Instruments Incorporated Electrostatic discharge protection circuit
US5077591A (en) * 1986-09-30 1991-12-31 Texas Instruments Incorporated Electrostatic discharge protection for semiconductor input devices
US5060037A (en) * 1987-04-03 1991-10-22 Texas Instruments Incorporated Output buffer with enhanced electrostatic discharge protection
FR2624320B1 (fr) * 1987-12-02 1990-05-18 Equip Electr Moteur Regulateur monolithique de tension de charge de batterie par un alternateur protege contre les tensions parasites
JPH01194349A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 半導体装置
US4980746A (en) * 1988-04-29 1990-12-25 Dallas Semiconductor Corporation Integrated circuit with improved battery protection
EP0345432A1 (de) * 1988-05-31 1989-12-13 Texas Instruments Incorporated Diode zum Schutz eines integrierten Schaltkreises vor elektrostatischen Entladungen (ESD)
DE58906972D1 (de) * 1988-08-16 1994-03-24 Siemens Ag Bipolartransistor als Schutzelement für integrierte Schaltungen.
US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
JPH02134864A (ja) * 1988-11-15 1990-05-23 Nec Corp 保護素子を有する半導体集積回路
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
IT1237666B (it) * 1989-10-31 1993-06-15 Sgs Thomson Microelectronics Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom
EP0437949A1 (de) * 1989-12-18 1991-07-24 Honeywell Inc. Doppeldiffundierte Kontaktleitung für Halbleiterbauelement
US5057879A (en) * 1990-12-24 1991-10-15 Motorola Inc. Noise reduction technique for breakdown diodes
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
EP0513415A1 (de) * 1991-05-16 1992-11-19 Kabushiki Kaisha Toshiba FET mit isoliertem Gate mit doppel-schichtigen Wannen von niedriger und höherer Störstoffkonzentrationen und sein Herstellungsverfahren
JP2633746B2 (ja) * 1991-05-27 1997-07-23 株式会社東芝 半導体装置
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
JPH07106555A (ja) * 1993-10-01 1995-04-21 Mitsubishi Electric Corp 入力保護回路
US5751168A (en) * 1995-04-28 1998-05-12 Texas Instruments Incorporated Bus switch integrated circuit with voltage translation
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5811857A (en) * 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications
JPH10189761A (ja) * 1996-12-20 1998-07-21 Fuji Electric Co Ltd 半導体装置
US6323522B1 (en) 1999-01-08 2001-11-27 International Business Machines Corporation Silicon on insulator thick oxide structure and process of manufacture
US20050224917A1 (en) * 2004-04-12 2005-10-13 Jing-Horng Gau Junction diode
US7042028B1 (en) * 2005-03-14 2006-05-09 System General Corp. Electrostatic discharge device
US7550820B2 (en) * 2006-08-10 2009-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Reverse-biased PN diode decoupling capacitor
US7834400B2 (en) * 2007-05-11 2010-11-16 System General Corp. Semiconductor structure for protecting an internal integrated circuit and method for manufacturing the same
US8222698B2 (en) 2009-06-29 2012-07-17 Analog Devices, Inc. Bond pad with integrated transient over-voltage protection
JP2011066246A (ja) * 2009-09-17 2011-03-31 Seiko Instruments Inc 静電気保護用半導体装置
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8432651B2 (en) 2010-06-09 2013-04-30 Analog Devices, Inc. Apparatus and method for electronic systems reliability
US8665571B2 (en) 2011-05-18 2014-03-04 Analog Devices, Inc. Apparatus and method for integrated circuit protection
US8368116B2 (en) 2010-06-09 2013-02-05 Analog Devices, Inc. Apparatus and method for protecting electronic circuits
US8553380B2 (en) 2010-07-08 2013-10-08 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US8416543B2 (en) 2010-07-08 2013-04-09 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8466489B2 (en) 2011-02-04 2013-06-18 Analog Devices, Inc. Apparatus and method for transient electrical overstress protection
US8592860B2 (en) 2011-02-11 2013-11-26 Analog Devices, Inc. Apparatus and method for protection of electronic circuits operating under high stress conditions
US8680620B2 (en) 2011-08-04 2014-03-25 Analog Devices, Inc. Bi-directional blocking voltage protection devices and methods of forming the same
US8947841B2 (en) 2012-02-13 2015-02-03 Analog Devices, Inc. Protection systems for integrated circuits and methods of forming the same
US8829570B2 (en) 2012-03-09 2014-09-09 Analog Devices, Inc. Switching device for heterojunction integrated circuits and methods of forming the same
US8946822B2 (en) 2012-03-19 2015-02-03 Analog Devices, Inc. Apparatus and method for protection of precision mixed-signal electronic circuits
US8610251B1 (en) 2012-06-01 2013-12-17 Analog Devices, Inc. Low voltage protection devices for precision transceivers and methods of forming the same
US8637899B2 (en) 2012-06-08 2014-01-28 Analog Devices, Inc. Method and apparatus for protection and high voltage isolation of low voltage communication interface terminals
US8796729B2 (en) 2012-11-20 2014-08-05 Analog Devices, Inc. Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same
US8860080B2 (en) 2012-12-19 2014-10-14 Analog Devices, Inc. Interface protection device with integrated supply clamp and method of forming the same
US9006781B2 (en) 2012-12-19 2015-04-14 Analog Devices, Inc. Devices for monolithic data conversion interface protection and methods of forming the same
US9123540B2 (en) 2013-01-30 2015-09-01 Analog Devices, Inc. Apparatus for high speed signal processing interface
US9275991B2 (en) 2013-02-13 2016-03-01 Analog Devices, Inc. Apparatus for transceiver signal isolation and voltage clamp
US9147677B2 (en) 2013-05-16 2015-09-29 Analog Devices Global Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same
US9171832B2 (en) 2013-05-24 2015-10-27 Analog Devices, Inc. Analog switch with high bipolar blocking voltage in low voltage CMOS process
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US9478608B2 (en) 2014-11-18 2016-10-25 Analog Devices, Inc. Apparatus and methods for transceiver interface overvoltage clamping
US10068894B2 (en) 2015-01-12 2018-09-04 Analog Devices, Inc. Low leakage bidirectional clamps and methods of forming the same
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9673187B2 (en) 2015-04-07 2017-06-06 Analog Devices, Inc. High speed interface protection apparatus
US9831233B2 (en) 2016-04-29 2017-11-28 Analog Devices Global Apparatuses for communication systems transceiver interfaces
US10249609B2 (en) 2017-08-10 2019-04-02 Analog Devices, Inc. Apparatuses for communication systems transceiver interfaces
TWI733957B (zh) * 2017-11-24 2021-07-21 源芯半導體股份有限公司 暫態電壓抑制器
US10700056B2 (en) 2018-09-07 2020-06-30 Analog Devices, Inc. Apparatus for automotive and communication systems transceiver interfaces
US20220254771A1 (en) * 2021-02-05 2022-08-11 Macronix International Co., Ltd. Semiconductor circuit and manufacturing method for the same

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPS468254B1 (de) * 1967-11-13 1971-03-02
JPS5122794B1 (de) * 1970-06-24 1976-07-12
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US3667009A (en) * 1970-12-28 1972-05-30 Motorola Inc Complementary metal oxide semiconductor gate protection diode
US3712995A (en) * 1972-03-27 1973-01-23 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
NL7501240A (nl) * 1974-02-11 1975-08-13 Rca Corp Bescherming van een geintegreerde keten tegen ge spanningen.
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
JPS51124385A (en) * 1975-04-23 1976-10-29 Hitachi Ltd Complementary type mis semiconductor integrated circuit
US3948694A (en) * 1975-04-30 1976-04-06 Motorola, Inc. Self-aligned method for integrated circuit manufacture
US4051504A (en) * 1975-10-14 1977-09-27 General Motors Corporation Ion implanted zener diode
US4117507A (en) * 1976-06-22 1978-09-26 Sgs-Ates Componeti Elettronici S.P.A. Diode formed in integrated-circuit structure
JPS6043666B2 (ja) * 1976-10-18 1985-09-30 株式会社日立製作所 相補形ｍｉｓ半導体装置
US4405934A (en) * 1981-04-13 1983-09-20 Texas Instruments Incorporated NPM Anti-saturation clamp for NPN logic gate transistor
JPS5944786B2 (ja) * 1981-07-06 1984-11-01 日本電信電話株式会社 相補型ｍｉｓ回路装置

Also Published As

Publication number Publication date
EP0168678A2 (de) 1986-01-22
JPS6132566A (ja) 1986-02-15
US4626882A (en) 1986-12-02
JPH0240221B2 (de) 1990-09-10
EP0168678A3 (en) 1987-04-22
EP0168678B1 (de) 1991-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee