IT1237666B - Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom - Google Patents

Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom

Info

Publication number
IT1237666B
IT1237666B IT02222889A IT2222889A IT1237666B IT 1237666 B IT1237666 B IT 1237666B IT 02222889 A IT02222889 A IT 02222889A IT 2222889 A IT2222889 A IT 2222889A IT 1237666 B IT1237666 B IT 1237666B
Authority
IT
Italy
Prior art keywords
built
manufacture
memory cells
electric device
eeprom memory
Prior art date
Application number
IT02222889A
Other languages
English (en)
Other versions
IT8922228A1 (it
IT8922228A0 (it
Inventor
Paolo Cappelletti
Giuseppe Corda
Paolo Ghezzi
Carlo Riva
Bruno Vajana
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT02222889A priority Critical patent/IT1237666B/it
Publication of IT8922228A0 publication Critical patent/IT8922228A0/it
Priority to EP90202840A priority patent/EP0426241B1/en
Priority to DE69025854T priority patent/DE69025854T2/de
Priority to JP2292196A priority patent/JP2588058B2/ja
Publication of IT8922228A1 publication Critical patent/IT8922228A1/it
Priority to US07/946,797 priority patent/US5322803A/en
Application granted granted Critical
Publication of IT1237666B publication Critical patent/IT1237666B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/021—Manufacture or treatment of breakdown diodes
    • H10D8/022—Manufacture or treatment of breakdown diodes of Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/174—Zener diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes
IT02222889A 1989-10-31 1989-10-31 Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom IT1237666B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT02222889A IT1237666B (it) 1989-10-31 1989-10-31 Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom
EP90202840A EP0426241B1 (en) 1989-10-31 1990-10-24 Process for the manufacture of a component to limit the programming voltage and to stabilise the voltage incorporated in an electric device with EEPROM memory cells
DE69025854T DE69025854T2 (de) 1989-10-31 1990-10-24 Verfahren zur Herstellung einer Komponente für die Begrenzung der Programmierungsspannung und für die Stabilisation der Spannung in einer elektrischen Anordnung mit EEPROM-Speicherzellen
JP2292196A JP2588058B2 (ja) 1989-10-31 1990-10-31 Ｅｅｐｒｏｍメモリ・セルを持つ電気的装置に設けられたプログラミング電圧を制限し安定化させるコンポーネントの製造方法
US07/946,797 US5322803A (en) 1989-10-31 1992-09-18 Process for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02222889A IT1237666B (it) 1989-10-31 1989-10-31 Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom

Publications (3)

Publication Number Publication Date
IT8922228A0 IT8922228A0 (it) 1989-10-31
IT8922228A1 IT8922228A1 (it) 1991-05-01
IT1237666B true IT1237666B (it) 1993-06-15

Family

ID=11193356

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02222889A IT1237666B (it) 1989-10-31 1989-10-31 Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom

Country Status (5)

Country Link
US (1) US5322803A (it)
EP (1) EP0426241B1 (it)
JP (1) JP2588058B2 (it)
DE (1) DE69025854T2 (it)
IT (1) IT1237666B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993019490A1 (fr) * 1992-03-23 1993-09-30 Rohm Co., Ltd. Diode de regulation de tension
DE69322384T2 (de) * 1993-09-10 1999-05-12 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Herstellungsverfahren einer Zenerdiode für Flash-EEPROM Bauteile
US6534364B1 (en) * 1994-12-05 2003-03-18 Texas Instruments Incorporated Tunnel diode layout for an EEPROM cell for protecting the tunnel diode region
US5756387A (en) * 1994-12-30 1998-05-26 Sgs-Thomson Microelectronics S.R.L. Method for forming zener diode with high time stability and low noise
EP0720237A1 (en) * 1994-12-30 1996-07-03 STMicroelectronics S.r.l. Zener diode for integrated circuits
JP3475634B2 (ja) * 1996-01-24 2003-12-08 ソニー株式会社 ツェナーダイオードおよびその製造方法
US5719427A (en) * 1997-01-14 1998-02-17 Pericom Semiconductor Corp. Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures
US5956271A (en) * 1997-12-12 1999-09-21 Texas Instruments Incorporated Channel hot electron programmed memory device having improved reliability and operability
ITTO980556A1 (it) * 1998-06-26 1999-12-26 St Microelectronics Srl Procedimento di fabbricazione di dispositivi integrati con protezione dell'ossido di porta da danni di processo e relativa struttura di
JP2004214575A (ja) * 2003-01-09 2004-07-29 Matsushita Electric Ind Co Ltd 半導体装置
US9136833B2 (en) * 2012-03-01 2015-09-15 Asahi Kasei Microdevices Corporation Power source connection circuit
EP2725615B1 (en) * 2012-10-29 2019-01-23 IMEC vzw Semiconductor device comprising a diode and a bipolar transistor and method for producing such a device
CN106711203B (zh) * 2015-11-12 2020-03-27 旺宏电子股份有限公司 半导体元件及其制造方法
US9735291B1 (en) * 2016-03-10 2017-08-15 Macronix International Co., Ltd. Semiconductor device and Zener diode

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1559611A (it) * 1967-06-30 1969-03-14
US4051504A (en) * 1975-10-14 1977-09-27 General Motors Corporation Ion implanted zener diode
US4553314B1 (en) * 1977-01-26 2000-04-18 Sgs Thomson Microelectronics Method for making a semiconductor device
US4136349A (en) * 1977-05-27 1979-01-23 Analog Devices, Inc. Ic chip with buried zener diode
US4168999A (en) * 1978-12-26 1979-09-25 Fairchild Camera And Instrument Corporation Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques
EP0021777B1 (en) * 1979-06-18 1983-10-19 Fujitsu Limited Semiconductor non-volatile memory device
EP0054740A2 (en) * 1980-12-23 1982-06-30 American Microsystems, Incorporated Zener diode burn prom
US4398338A (en) * 1980-12-24 1983-08-16 Fairchild Camera & Instrument Corp. Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JPS63100773A (ja) * 1986-10-16 1988-05-02 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
US4990976A (en) * 1987-11-24 1991-02-05 Nec Corporation Semiconductor device including a field effect transistor having a protective diode between source and drain thereof
JPH022156A (ja) * 1987-12-07 1990-01-08 Texas Instr Inc <Ti> 集積回路の製法
US4982371A (en) * 1989-05-15 1991-01-01 Dallas Semiconductor Corporation Compact electronic module having a RAM device
US5089443A (en) * 1990-05-30 1992-02-18 Prime Computer, Inc. Method of making a semiconductor heat sink

Also Published As

Publication number Publication date
JPH03225875A (ja) 1991-10-04
EP0426241A3 (en) 1991-11-27
DE69025854T2 (de) 1996-08-01
IT8922228A1 (it) 1991-05-01
US5322803A (en) 1994-06-21
EP0426241A2 (en) 1991-05-08
EP0426241B1 (en) 1996-03-13
JP2588058B2 (ja) 1997-03-05
IT8922228A0 (it) 1989-10-31
DE69025854D1 (de) 1996-04-18

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030