IT1237666B - Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom - Google Patents
Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eepromInfo
- Publication number
- IT1237666B IT1237666B IT02222889A IT2222889A IT1237666B IT 1237666 B IT1237666 B IT 1237666B IT 02222889 A IT02222889 A IT 02222889A IT 2222889 A IT2222889 A IT 2222889A IT 1237666 B IT1237666 B IT 1237666B
- Authority
- IT
- Italy
- Prior art keywords
- built
- manufacture
- memory cells
- electric device
- eeprom memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000003381 stabilizer Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66098—Breakdown diodes
- H01L29/66106—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/174—Zener diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT02222889A IT1237666B (it) | 1989-10-31 | 1989-10-31 | Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom |
EP90202840A EP0426241B1 (en) | 1989-10-31 | 1990-10-24 | Process for the manufacture of a component to limit the programming voltage and to stabilise the voltage incorporated in an electric device with EEPROM memory cells |
DE69025854T DE69025854T2 (de) | 1989-10-31 | 1990-10-24 | Verfahren zur Herstellung einer Komponente für die Begrenzung der Programmierungsspannung und für die Stabilisation der Spannung in einer elektrischen Anordnung mit EEPROM-Speicherzellen |
JP2292196A JP2588058B2 (ja) | 1989-10-31 | 1990-10-31 | Eepromメモリ・セルを持つ電気的装置に設けられたプログラミング電圧を制限し安定化させるコンポーネントの製造方法 |
US07/946,797 US5322803A (en) | 1989-10-31 | 1992-09-18 | Process for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT02222889A IT1237666B (it) | 1989-10-31 | 1989-10-31 | Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8922228A0 IT8922228A0 (it) | 1989-10-31 |
IT1237666B true IT1237666B (it) | 1993-06-15 |
Family
ID=11193356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT02222889A IT1237666B (it) | 1989-10-31 | 1989-10-31 | Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom |
Country Status (5)
Country | Link |
---|---|
US (1) | US5322803A (it) |
EP (1) | EP0426241B1 (it) |
JP (1) | JP2588058B2 (it) |
DE (1) | DE69025854T2 (it) |
IT (1) | IT1237666B (it) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1993019490A1 (en) * | 1992-03-23 | 1993-09-30 | Rohm Co., Ltd. | Voltage regulating diode |
DE69322384T2 (de) * | 1993-09-10 | 1999-05-12 | Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano | Herstellungsverfahren einer Zenerdiode für Flash-EEPROM Bauteile |
US6534364B1 (en) * | 1994-12-05 | 2003-03-18 | Texas Instruments Incorporated | Tunnel diode layout for an EEPROM cell for protecting the tunnel diode region |
US5756387A (en) * | 1994-12-30 | 1998-05-26 | Sgs-Thomson Microelectronics S.R.L. | Method for forming zener diode with high time stability and low noise |
EP0720237A1 (en) * | 1994-12-30 | 1996-07-03 | STMicroelectronics S.r.l. | Zener diode for integrated circuits |
JP3475634B2 (ja) | 1996-01-24 | 2003-12-08 | ソニー株式会社 | ツェナーダイオードおよびその製造方法 |
US5719427A (en) * | 1997-01-14 | 1998-02-17 | Pericom Semiconductor Corp. | Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures |
US5956271A (en) * | 1997-12-12 | 1999-09-21 | Texas Instruments Incorporated | Channel hot electron programmed memory device having improved reliability and operability |
ITTO980556A1 (it) | 1998-06-26 | 1999-12-26 | St Microelectronics Srl | Procedimento di fabbricazione di dispositivi integrati con protezione dell'ossido di porta da danni di processo e relativa struttura di |
JP2004214575A (ja) * | 2003-01-09 | 2004-07-29 | Matsushita Electric Ind Co Ltd | 半導体装置 |
CN103518326A (zh) * | 2012-03-01 | 2014-01-15 | 旭化成微电子株式会社 | 电源连接电路 |
EP2725615B1 (en) | 2012-10-29 | 2019-01-23 | IMEC vzw | Semiconductor device comprising a diode and a bipolar transistor and method for producing such a device |
CN106711203B (zh) * | 2015-11-12 | 2020-03-27 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
US9735291B1 (en) * | 2016-03-10 | 2017-08-15 | Macronix International Co., Ltd. | Semiconductor device and Zener diode |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1559611A (it) * | 1967-06-30 | 1969-03-14 | ||
US4051504A (en) * | 1975-10-14 | 1977-09-27 | General Motors Corporation | Ion implanted zener diode |
US4553314B1 (en) * | 1977-01-26 | 2000-04-18 | Sgs Thomson Microelectronics | Method for making a semiconductor device |
US4136349A (en) * | 1977-05-27 | 1979-01-23 | Analog Devices, Inc. | Ic chip with buried zener diode |
US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
EP0021777B1 (en) * | 1979-06-18 | 1983-10-19 | Fujitsu Limited | Semiconductor non-volatile memory device |
EP0054740A2 (en) * | 1980-12-23 | 1982-06-30 | American Microsystems, Incorporated | Zener diode burn prom |
US4398338A (en) * | 1980-12-24 | 1983-08-16 | Fairchild Camera & Instrument Corp. | Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques |
US4626882A (en) * | 1984-07-18 | 1986-12-02 | International Business Machines Corporation | Twin diode overvoltage protection structure |
JPS63100773A (ja) * | 1986-10-16 | 1988-05-02 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
US4990976A (en) * | 1987-11-24 | 1991-02-05 | Nec Corporation | Semiconductor device including a field effect transistor having a protective diode between source and drain thereof |
EP0320217B1 (en) * | 1987-12-07 | 1996-05-01 | Texas Instruments Incorporated | An improved twin-well BiCMOS process |
US4982371A (en) * | 1989-05-15 | 1991-01-01 | Dallas Semiconductor Corporation | Compact electronic module having a RAM device |
US5089443A (en) * | 1990-05-30 | 1992-02-18 | Prime Computer, Inc. | Method of making a semiconductor heat sink |
-
1989
- 1989-10-31 IT IT02222889A patent/IT1237666B/it active IP Right Grant
-
1990
- 1990-10-24 EP EP90202840A patent/EP0426241B1/en not_active Expired - Lifetime
- 1990-10-24 DE DE69025854T patent/DE69025854T2/de not_active Expired - Fee Related
- 1990-10-31 JP JP2292196A patent/JP2588058B2/ja not_active Expired - Fee Related
-
1992
- 1992-09-18 US US07/946,797 patent/US5322803A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69025854D1 (de) | 1996-04-18 |
US5322803A (en) | 1994-06-21 |
EP0426241A3 (en) | 1991-11-27 |
JP2588058B2 (ja) | 1997-03-05 |
IT8922228A0 (it) | 1989-10-31 |
DE69025854T2 (de) | 1996-08-01 |
EP0426241B1 (en) | 1996-03-13 |
JPH03225875A (ja) | 1991-10-04 |
EP0426241A2 (en) | 1991-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1237666B (it) | Processo per la fabbricazione di un componente limitatore della tensione di programmazione e stabilizzatore di tensione incorporato inun dispositivo elettrico con celle di memoria eeprom | |
GB2235999B (en) | Block erasing an electrically erasable and electrically programmable memory | |
KR900010786A (ko) | 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법 | |
KR950008401B1 (en) | Nonvolatile memory device with a high number of cycle programming endurance | |
GB2235088B (en) | Nonvolatile semiconductor memory device and manufacturing method thereof | |
KR890004434A (ko) | 불휘발성 반도체기억장치 및 그 제조방법 | |
EP0485018A3 (en) | Electrically erasable and programmable read only memory with trench structure | |
BR8906429A (pt) | Dispositivo de conexao eletrica; envoltorio fechado; e processo para o estabelecimento de uma conexao eletrica | |
DE69720640D1 (de) | Lithium-Ionen leitende Glaskeramiken und damit hergestellte elektrische Zellen und Glassensoren | |
DE68927118D1 (de) | Ionenfang-Teste und -Vorrichtungen | |
DE69025470D1 (de) | Elektrische enzymfühlerelektrode sowie deren herstellungsverfahren | |
DE69418888D1 (de) | Drehverbinder zur verwendung mit einem langgestreckten flexiblen element kleinen durchmessers mit elektrischen eigenschaften | |
BR9206939A (pt) | Célula de metal-ar e processo para acomodar uma variação na dimensão de um elétrodo | |
BR9405673A (pt) | Estrutura de eletrodo com área de superfície elevada porosa e processo de fabricação de eletrodo de superfície elevada porosa | |
DE69216502D1 (de) | Elektrische Durchführungsstruktur und Herstellungsverfahren | |
AU6769587A (en) | Programmable word length and self-testing memory in a gate array with bidirectional symmetry | |
EP0469555A3 (en) | Charge storage capacitor electrode and method of manufacturing the same | |
DE69432392D1 (de) | Elektrochemische Zelle mit hoher Zuverlässigkeit und Elektrodenanordnung hierfür | |
BR7700096A (pt) | Processo de fabricar um componente eletrico e componente eletrico fabricado de acordo com dito processo | |
DE69524481D1 (de) | Defibrillator mit mehreren verschiedenartigen Stecker-/Elektroden-Anordnungen | |
IT8449161A1 (it) | Regolatore di componente longitudinale di tensione | |
DE69217955D1 (de) | Einführung von proben in ein ionenmobilitätsspektrometer | |
DE69313729D1 (de) | Elektrische Steckbuchse und deren Verwendung in einem Verbinder | |
IT1221780B (it) | Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos | |
BR9006358A (pt) | Fecho corredico e processo de fabricacao |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971030 |