GB2151846A - A high voltage destruction-prevention circuit for a semiconductor integrated circuit device - Google Patents
A high voltage destruction-prevention circuit for a semiconductor integrated circuit device Download PDFInfo
- Publication number
- GB2151846A GB2151846A GB08431596A GB8431596A GB2151846A GB 2151846 A GB2151846 A GB 2151846A GB 08431596 A GB08431596 A GB 08431596A GB 8431596 A GB8431596 A GB 8431596A GB 2151846 A GB2151846 A GB 2151846A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor
- semiconductor region
- integrated circuit
- circuit device
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 239
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 230000003071 parasitic effect Effects 0.000 claims abstract description 4
- 230000005669 field effect Effects 0.000 claims description 13
- 239000012212 insulator Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 31
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58236132A JPS60128653A (ja) | 1983-12-16 | 1983-12-16 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB8431596D0 GB8431596D0 (en) | 1985-01-30 |
GB2151846A true GB2151846A (en) | 1985-07-24 |
Family
ID=16996229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08431596A Withdrawn GB2151846A (en) | 1983-12-16 | 1984-12-14 | A high voltage destruction-prevention circuit for a semiconductor integrated circuit device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS60128653A (enrdf_load_stackoverflow) |
KR (1) | KR850005155A (enrdf_load_stackoverflow) |
GB (1) | GB2151846A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0225586A1 (en) * | 1985-12-03 | 1987-06-16 | SGS MICROELETTRONICA S.p.A. | An overvoltage protection circuit for an integrated MOS device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1337220A (en) * | 1971-12-09 | 1973-11-14 | Ibm | Monolithic entegrated circuit |
GB2090701A (en) * | 1980-11-19 | 1982-07-14 | Ates Componenti Elettron | Improvements in or relating to input protection for MOS integrated circuits |
GB2133926A (en) * | 1982-11-18 | 1984-08-01 | Nec Corp | Protection circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5380A (en) * | 1976-06-23 | 1978-01-05 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS6034824B2 (ja) * | 1979-05-03 | 1985-08-10 | 三菱電機株式会社 | Mos電界効果形半導体装置 |
JPS5640272A (en) * | 1979-09-10 | 1981-04-16 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
-
1983
- 1983-12-16 JP JP58236132A patent/JPS60128653A/ja active Granted
-
1984
- 1984-12-06 KR KR1019840007685A patent/KR850005155A/ko not_active Abandoned
- 1984-12-14 GB GB08431596A patent/GB2151846A/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1337220A (en) * | 1971-12-09 | 1973-11-14 | Ibm | Monolithic entegrated circuit |
GB2090701A (en) * | 1980-11-19 | 1982-07-14 | Ates Componenti Elettron | Improvements in or relating to input protection for MOS integrated circuits |
GB2133926A (en) * | 1982-11-18 | 1984-08-01 | Nec Corp | Protection circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0225586A1 (en) * | 1985-12-03 | 1987-06-16 | SGS MICROELETTRONICA S.p.A. | An overvoltage protection circuit for an integrated MOS device |
Also Published As
Publication number | Publication date |
---|---|
JPH0530073B2 (enrdf_load_stackoverflow) | 1993-05-07 |
GB8431596D0 (en) | 1985-01-30 |
KR850005155A (ko) | 1985-08-21 |
JPS60128653A (ja) | 1985-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |