JPS6221018Y2 - - Google Patents
Info
- Publication number
- JPS6221018Y2 JPS6221018Y2 JP16390981U JP16390981U JPS6221018Y2 JP S6221018 Y2 JPS6221018 Y2 JP S6221018Y2 JP 16390981 U JP16390981 U JP 16390981U JP 16390981 U JP16390981 U JP 16390981U JP S6221018 Y2 JPS6221018 Y2 JP S6221018Y2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- diffusion layer
- terminal
- type region
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 7
- 230000002159 abnormal effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Protection Of Static Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16390981U JPS5868043U (ja) | 1981-11-02 | 1981-11-02 | 半導体素子用入力保護装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16390981U JPS5868043U (ja) | 1981-11-02 | 1981-11-02 | 半導体素子用入力保護装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868043U JPS5868043U (ja) | 1983-05-09 |
| JPS6221018Y2 true JPS6221018Y2 (enrdf_load_stackoverflow) | 1987-05-28 |
Family
ID=29956186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16390981U Granted JPS5868043U (ja) | 1981-11-02 | 1981-11-02 | 半導体素子用入力保護装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868043U (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014460A (ja) * | 1983-07-04 | 1985-01-25 | Mitsubishi Electric Corp | 半導体集積回路 |
| JPS61137359A (ja) * | 1984-12-10 | 1986-06-25 | Nec Corp | 保護回路を備えた半導体装置 |
| JPH0525250Y2 (enrdf_load_stackoverflow) * | 1985-10-08 | 1993-06-25 | ||
| JPH06105740B2 (ja) * | 1987-05-27 | 1994-12-21 | 日本電気株式会社 | 集積回路装置 |
-
1981
- 1981-11-02 JP JP16390981U patent/JPS5868043U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5868043U (ja) | 1983-05-09 |
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