JPS60100468A - プラズマ陽極酸化装置 - Google Patents

プラズマ陽極酸化装置

Info

Publication number
JPS60100468A
JPS60100468A JP58207423A JP20742383A JPS60100468A JP S60100468 A JPS60100468 A JP S60100468A JP 58207423 A JP58207423 A JP 58207423A JP 20742383 A JP20742383 A JP 20742383A JP S60100468 A JPS60100468 A JP S60100468A
Authority
JP
Japan
Prior art keywords
thin film
semiconductor device
film
substrate
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58207423A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530053B2 (enrdf_load_stackoverflow
Inventor
Makoto Matsui
誠 松井
Yasuhiro Shiraki
靖寛 白木
Akira Shintani
新谷　昭
Kunio Hayashi
林　国夫
Eiichi Maruyama
瑛一 丸山
Junichi Owada
淳一 大和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58207423A priority Critical patent/JPS60100468A/ja
Publication of JPS60100468A publication Critical patent/JPS60100468A/ja
Publication of JPH0530053B2 publication Critical patent/JPH0530053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Formation Of Insulating Films (AREA)
JP58207423A 1983-11-07 1983-11-07 プラズマ陽極酸化装置 Granted JPS60100468A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58207423A JPS60100468A (ja) 1983-11-07 1983-11-07 プラズマ陽極酸化装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58207423A JPS60100468A (ja) 1983-11-07 1983-11-07 プラズマ陽極酸化装置

Publications (2)

Publication Number Publication Date
JPS60100468A true JPS60100468A (ja) 1985-06-04
JPH0530053B2 JPH0530053B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=16539506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58207423A Granted JPS60100468A (ja) 1983-11-07 1983-11-07 プラズマ陽極酸化装置

Country Status (1)

Country Link
JP (1) JPS60100468A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316479A (ja) * 1987-06-19 1988-12-23 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPH01187873A (ja) * 1988-01-22 1989-07-27 Seiko Epson Corp 半導体装置の製造方法
JPH0215669A (ja) * 1988-07-01 1990-01-19 Ricoh Co Ltd 半導体装置の製造方法
JPH0221663A (ja) * 1988-07-08 1990-01-24 Sharp Corp 薄膜トランジスタの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568636A (en) * 1978-11-20 1980-05-23 Nippon Telegr & Teleph Corp <Ntt> Anodic oxidation method of compound semiconductor by plasma
JPS57134970A (en) * 1981-02-13 1982-08-20 Citizen Watch Co Ltd Manufacture of thin film transistor
JPS5825266A (ja) * 1981-08-07 1983-02-15 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPS5831575A (ja) * 1981-08-19 1983-02-24 Hitachi Ltd 多結晶薄膜トランジスタ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568636A (en) * 1978-11-20 1980-05-23 Nippon Telegr & Teleph Corp <Ntt> Anodic oxidation method of compound semiconductor by plasma
JPS57134970A (en) * 1981-02-13 1982-08-20 Citizen Watch Co Ltd Manufacture of thin film transistor
JPS5825266A (ja) * 1981-08-07 1983-02-15 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPS5831575A (ja) * 1981-08-19 1983-02-24 Hitachi Ltd 多結晶薄膜トランジスタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316479A (ja) * 1987-06-19 1988-12-23 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JPH01187873A (ja) * 1988-01-22 1989-07-27 Seiko Epson Corp 半導体装置の製造方法
JPH0215669A (ja) * 1988-07-01 1990-01-19 Ricoh Co Ltd 半導体装置の製造方法
JPH0221663A (ja) * 1988-07-08 1990-01-24 Sharp Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0530053B2 (enrdf_load_stackoverflow) 1993-05-07

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