JPH0530053B2 - - Google Patents

Info

Publication number
JPH0530053B2
JPH0530053B2 JP58207423A JP20742383A JPH0530053B2 JP H0530053 B2 JPH0530053 B2 JP H0530053B2 JP 58207423 A JP58207423 A JP 58207423A JP 20742383 A JP20742383 A JP 20742383A JP H0530053 B2 JPH0530053 B2 JP H0530053B2
Authority
JP
Japan
Prior art keywords
sample
conductive layer
film
thin film
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58207423A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60100468A (ja
Inventor
Makoto Matsui
Yasuhiro Shiraki
Akira Shintani
Kunio Hayashi
Eiichi Maruyama
Junichi Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58207423A priority Critical patent/JPS60100468A/ja
Publication of JPS60100468A publication Critical patent/JPS60100468A/ja
Publication of JPH0530053B2 publication Critical patent/JPH0530053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Formation Of Insulating Films (AREA)
JP58207423A 1983-11-07 1983-11-07 プラズマ陽極酸化装置 Granted JPS60100468A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58207423A JPS60100468A (ja) 1983-11-07 1983-11-07 プラズマ陽極酸化装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58207423A JPS60100468A (ja) 1983-11-07 1983-11-07 プラズマ陽極酸化装置

Publications (2)

Publication Number Publication Date
JPS60100468A JPS60100468A (ja) 1985-06-04
JPH0530053B2 true JPH0530053B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=16539506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58207423A Granted JPS60100468A (ja) 1983-11-07 1983-11-07 プラズマ陽極酸化装置

Country Status (1)

Country Link
JP (1) JPS60100468A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63316479A (ja) * 1987-06-19 1988-12-23 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JP2638868B2 (ja) * 1988-01-22 1997-08-06 セイコーエプソン株式会社 半導体装置の製造方法
JP2642423B2 (ja) * 1988-07-01 1997-08-20 株式会社リコー 半導体装置の製造方法
JPH0221663A (ja) * 1988-07-08 1990-01-24 Sharp Corp 薄膜トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568636A (en) * 1978-11-20 1980-05-23 Nippon Telegr & Teleph Corp <Ntt> Anodic oxidation method of compound semiconductor by plasma
JPS57134970A (en) * 1981-02-13 1982-08-20 Citizen Watch Co Ltd Manufacture of thin film transistor
JPS5825266A (ja) * 1981-08-07 1983-02-15 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPS5831575A (ja) * 1981-08-19 1983-02-24 Hitachi Ltd 多結晶薄膜トランジスタ

Also Published As

Publication number Publication date
JPS60100468A (ja) 1985-06-04

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