JPS5958833A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5958833A JPS5958833A JP57169392A JP16939282A JPS5958833A JP S5958833 A JPS5958833 A JP S5958833A JP 57169392 A JP57169392 A JP 57169392A JP 16939282 A JP16939282 A JP 16939282A JP S5958833 A JPS5958833 A JP S5958833A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- wire
- lead frame
- semiconductor device
- iron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/50—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H10W72/522—
-
- H10W72/536—
-
- H10W72/5363—
-
- H10W72/5525—
-
- H10W72/555—
-
- H10W90/756—
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57169392A JPS5958833A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57169392A JPS5958833A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5958833A true JPS5958833A (ja) | 1984-04-04 |
| JPH0141028B2 JPH0141028B2 (cg-RX-API-DMAC10.html) | 1989-09-01 |
Family
ID=15885744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57169392A Granted JPS5958833A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5958833A (cg-RX-API-DMAC10.html) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225450A (ja) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | 半導体装置の製造法 |
| JPS60240149A (ja) * | 1984-05-15 | 1985-11-29 | Sharp Corp | 半導体装置 |
| JPS6180844A (ja) * | 1984-09-28 | 1986-04-24 | Furukawa Electric Co Ltd:The | 半導体リ−ドフレ−ム用条材 |
| JPS61201762A (ja) * | 1985-03-05 | 1986-09-06 | Furukawa Electric Co Ltd:The | リードフレーム用Cu系条材の製造方法 |
| JPS62213269A (ja) * | 1986-03-14 | 1987-09-19 | Hitachi Cable Ltd | 半導体用リ−ドフレ−ム |
| US4707724A (en) * | 1984-06-04 | 1987-11-17 | Hitachi, Ltd. | Semiconductor device and method of manufacturing thereof |
| DE3828700A1 (de) * | 1987-09-16 | 1989-04-06 | Nat Semiconductor Corp | Kupferplattierter bleirahmen fuer halbleiter-kunststoff-gehaeuse |
| JPH05283596A (ja) * | 1992-03-14 | 1993-10-29 | Kyushu Hitachi Maxell Ltd | 半導体装置のリードフレーム |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138246A (en) * | 1979-04-13 | 1980-10-28 | Toshiba Corp | Manufacture of semicondoctor device |
| JPS5678357U (cg-RX-API-DMAC10.html) * | 1979-11-09 | 1981-06-25 | ||
| JPS57109350A (en) * | 1980-12-26 | 1982-07-07 | Toshiba Corp | Semiconductor device |
-
1982
- 1982-09-28 JP JP57169392A patent/JPS5958833A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138246A (en) * | 1979-04-13 | 1980-10-28 | Toshiba Corp | Manufacture of semicondoctor device |
| JPS5678357U (cg-RX-API-DMAC10.html) * | 1979-11-09 | 1981-06-25 | ||
| JPS57109350A (en) * | 1980-12-26 | 1982-07-07 | Toshiba Corp | Semiconductor device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225450A (ja) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | 半導体装置の製造法 |
| JPS60240149A (ja) * | 1984-05-15 | 1985-11-29 | Sharp Corp | 半導体装置 |
| US4707724A (en) * | 1984-06-04 | 1987-11-17 | Hitachi, Ltd. | Semiconductor device and method of manufacturing thereof |
| JPS6180844A (ja) * | 1984-09-28 | 1986-04-24 | Furukawa Electric Co Ltd:The | 半導体リ−ドフレ−ム用条材 |
| JPS61201762A (ja) * | 1985-03-05 | 1986-09-06 | Furukawa Electric Co Ltd:The | リードフレーム用Cu系条材の製造方法 |
| JPS62213269A (ja) * | 1986-03-14 | 1987-09-19 | Hitachi Cable Ltd | 半導体用リ−ドフレ−ム |
| DE3828700A1 (de) * | 1987-09-16 | 1989-04-06 | Nat Semiconductor Corp | Kupferplattierter bleirahmen fuer halbleiter-kunststoff-gehaeuse |
| DE3828700C2 (de) * | 1987-09-16 | 2002-04-18 | Nat Semiconductor Corp | Kupferplattierter Leiterrahmen für Halbleiter-Kunststoff-Gehäuse |
| JPH05283596A (ja) * | 1992-03-14 | 1993-10-29 | Kyushu Hitachi Maxell Ltd | 半導体装置のリードフレーム |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0141028B2 (cg-RX-API-DMAC10.html) | 1989-09-01 |
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