JPS5914897B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5914897B2
JPS5914897B2 JP50016561A JP1656175A JPS5914897B2 JP S5914897 B2 JPS5914897 B2 JP S5914897B2 JP 50016561 A JP50016561 A JP 50016561A JP 1656175 A JP1656175 A JP 1656175A JP S5914897 B2 JPS5914897 B2 JP S5914897B2
Authority
JP
Japan
Prior art keywords
region
type
transistor
collector
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50016561A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5191680A (tr
Inventor
肇 矢木
忠晴 露木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50016561A priority Critical patent/JPS5914897B2/ja
Priority to US05/654,758 priority patent/US4038680A/en
Priority to GB440076A priority patent/GB1533156A/en
Priority to CA76245057A priority patent/CA1048655A/en
Priority to IT1995076A priority patent/IT1055132B/it
Priority to DE19762604735 priority patent/DE2604735A1/de
Priority to CH146276A priority patent/CH607332A5/xx
Priority to FR7603362A priority patent/FR2300417A1/fr
Priority to NL7601307A priority patent/NL7601307A/xx
Publication of JPS5191680A publication Critical patent/JPS5191680A/ja
Publication of JPS5914897B2 publication Critical patent/JPS5914897B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP50016561A 1972-12-29 1975-02-08 半導体装置 Expired JPS5914897B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP50016561A JPS5914897B2 (ja) 1975-02-08 1975-02-08 半導体装置
US05/654,758 US4038680A (en) 1972-12-29 1976-02-03 Semiconductor integrated circuit device
GB440076A GB1533156A (en) 1975-02-08 1976-02-04 Semiconductor integrated circuits
CA76245057A CA1048655A (en) 1975-02-08 1976-02-05 Semiconductor integrated circuit device
IT1995076A IT1055132B (it) 1975-02-08 1976-02-05 Dispositivo semiconduttore a circuito intergrato
DE19762604735 DE2604735A1 (de) 1975-02-08 1976-02-06 Integrierter halbleiterbaustein
CH146276A CH607332A5 (tr) 1975-02-08 1976-02-06
FR7603362A FR2300417A1 (fr) 1975-02-08 1976-02-06 Circuit semi-conducteur integre a transistors complementaires pnp-npn
NL7601307A NL7601307A (nl) 1975-02-08 1976-02-09 Halfgeleiderinrichting met geintegreerde schakeling.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50016561A JPS5914897B2 (ja) 1975-02-08 1975-02-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS5191680A JPS5191680A (tr) 1976-08-11
JPS5914897B2 true JPS5914897B2 (ja) 1984-04-06

Family

ID=11919681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50016561A Expired JPS5914897B2 (ja) 1972-12-29 1975-02-08 半導体装置

Country Status (8)

Country Link
JP (1) JPS5914897B2 (tr)
CA (1) CA1048655A (tr)
CH (1) CH607332A5 (tr)
DE (1) DE2604735A1 (tr)
FR (1) FR2300417A1 (tr)
GB (1) GB1533156A (tr)
IT (1) IT1055132B (tr)
NL (1) NL7601307A (tr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61164399U (tr) * 1985-03-30 1986-10-11
JPS632549Y2 (tr) * 1983-10-04 1988-01-22
JPS6386192U (tr) * 1986-11-19 1988-06-06
JPH02296994A (ja) * 1989-05-09 1990-12-07 Fujita Corp 泥漿シールド機のカツターヘツド
JPH03128793U (tr) * 1990-04-10 1991-12-25
JPH0450493U (tr) * 1990-08-31 1992-04-28
JPH053587Y2 (tr) * 1986-11-19 1993-01-28

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
IT1218471B (it) * 1985-05-09 1990-04-19 Ates Componenti Elettron Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
DE3883459T2 (de) * 1987-07-29 1994-03-17 Fairchild Semiconductor Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren.
FR3106931B1 (fr) * 2020-01-30 2022-02-18 St Microelectronics Crolles 2 Sas Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991191A (tr) * 1972-12-29 1974-08-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991191A (tr) * 1972-12-29 1974-08-30

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632549Y2 (tr) * 1983-10-04 1988-01-22
JPS61164399U (tr) * 1985-03-30 1986-10-11
JPS6386192U (tr) * 1986-11-19 1988-06-06
JPH053587Y2 (tr) * 1986-11-19 1993-01-28
JPH02296994A (ja) * 1989-05-09 1990-12-07 Fujita Corp 泥漿シールド機のカツターヘツド
JPH03128793U (tr) * 1990-04-10 1991-12-25
JPH0450493U (tr) * 1990-08-31 1992-04-28

Also Published As

Publication number Publication date
CA1048655A (en) 1979-02-13
NL7601307A (nl) 1976-08-10
CH607332A5 (tr) 1978-12-15
IT1055132B (it) 1981-12-21
GB1533156A (en) 1978-11-22
JPS5191680A (tr) 1976-08-11
FR2300417A1 (fr) 1976-09-03
DE2604735A1 (de) 1976-08-19
FR2300417B1 (tr) 1980-03-21

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