DE2604735A1 - Integrierter halbleiterbaustein - Google Patents
Integrierter halbleiterbausteinInfo
- Publication number
- DE2604735A1 DE2604735A1 DE19762604735 DE2604735A DE2604735A1 DE 2604735 A1 DE2604735 A1 DE 2604735A1 DE 19762604735 DE19762604735 DE 19762604735 DE 2604735 A DE2604735 A DE 2604735A DE 2604735 A1 DE2604735 A1 DE 2604735A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- type
- conductivity type
- area
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000012535 impurity Substances 0.000 claims description 59
- 238000009792 diffusion process Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 description 20
- 230000000295 complement effect Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 230000003321 amplification Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2604735A1 true DE2604735A1 (de) | 1976-08-19 |
Family
ID=11919681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762604735 Withdrawn DE2604735A1 (de) | 1975-02-08 | 1976-02-06 | Integrierter halbleiterbaustein |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5914897B2 (tr) |
| CA (1) | CA1048655A (tr) |
| CH (1) | CH607332A5 (tr) |
| DE (1) | DE2604735A1 (tr) |
| FR (1) | FR2300417A1 (tr) |
| GB (1) | GB1533156A (tr) |
| IT (1) | IT1055132B (tr) |
| NL (1) | NL7601307A (tr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093304A1 (en) * | 1982-04-19 | 1983-11-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor IC and method of making the same |
| FR2581796A1 (fr) * | 1985-05-09 | 1986-11-14 | Sgs Microelettronica Spa | Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
| JPS6062595U (ja) * | 1983-10-04 | 1985-05-01 | 井上 八郎 | 地盤堀削用ビツトの切削用刃先 |
| JPS61164399U (tr) * | 1985-03-30 | 1986-10-11 | ||
| JPS6386192U (tr) * | 1986-11-19 | 1988-06-06 | ||
| JPH053587Y2 (tr) * | 1986-11-19 | 1993-01-28 | ||
| DE3883459T2 (de) * | 1987-07-29 | 1994-03-17 | Fairchild Semiconductor | Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren. |
| JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
| JPH03128793U (tr) * | 1990-04-10 | 1991-12-25 | ||
| JPH0450493U (tr) * | 1990-08-31 | 1992-04-28 | ||
| FR3106931B1 (fr) * | 2020-01-30 | 2022-02-18 | St Microelectronics Crolles 2 Sas | Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5147583B2 (tr) * | 1972-12-29 | 1976-12-15 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB440076A patent/GB1533156A/en not_active Expired
- 1976-02-05 IT IT1995076A patent/IT1055132B/it active
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093304A1 (en) * | 1982-04-19 | 1983-11-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor IC and method of making the same |
| FR2581796A1 (fr) * | 1985-05-09 | 1986-11-14 | Sgs Microelettronica Spa | Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2300417B1 (tr) | 1980-03-21 |
| GB1533156A (en) | 1978-11-22 |
| JPS5914897B2 (ja) | 1984-04-06 |
| CH607332A5 (tr) | 1978-12-15 |
| JPS5191680A (tr) | 1976-08-11 |
| IT1055132B (it) | 1981-12-21 |
| NL7601307A (nl) | 1976-08-10 |
| FR2300417A1 (fr) | 1976-09-03 |
| CA1048655A (en) | 1979-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |