JPS5884466A - 半導体素子 - Google Patents

半導体素子

Info

Publication number
JPS5884466A
JPS5884466A JP56182654A JP18265481A JPS5884466A JP S5884466 A JPS5884466 A JP S5884466A JP 56182654 A JP56182654 A JP 56182654A JP 18265481 A JP18265481 A JP 18265481A JP S5884466 A JPS5884466 A JP S5884466A
Authority
JP
Japan
Prior art keywords
film
thin film
silicon thin
polycrystalline silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56182654A
Other languages
English (en)
Japanese (ja)
Other versions
JPH021367B2 (enrdf_load_stackoverflow
Inventor
Toshiyuki Komatsu
利行 小松
Yutaka Hirai
裕 平井
Katsumi Nakagawa
克己 中川
Yoshiyuki Osada
芳幸 長田
Tomoji Komata
小俣　智司
Takashi Nakagiri
孝志 中桐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56182654A priority Critical patent/JPS5884466A/ja
Priority to DE19823241959 priority patent/DE3241959A1/de
Publication of JPS5884466A publication Critical patent/JPS5884466A/ja
Priority to US07/188,677 priority patent/US4905072A/en
Publication of JPH021367B2 publication Critical patent/JPH021367B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
  • Weting (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP56182654A 1981-11-13 1981-11-13 半導体素子 Granted JPS5884466A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56182654A JPS5884466A (ja) 1981-11-13 1981-11-13 半導体素子
DE19823241959 DE3241959A1 (de) 1981-11-13 1982-11-12 Halbleiterbauelement
US07/188,677 US4905072A (en) 1981-11-13 1988-04-29 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56182654A JPS5884466A (ja) 1981-11-13 1981-11-13 半導体素子

Publications (2)

Publication Number Publication Date
JPS5884466A true JPS5884466A (ja) 1983-05-20
JPH021367B2 JPH021367B2 (enrdf_load_stackoverflow) 1990-01-11

Family

ID=16122091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56182654A Granted JPS5884466A (ja) 1981-11-13 1981-11-13 半導体素子

Country Status (1)

Country Link
JP (1) JPS5884466A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136259A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法
JPS6146069A (ja) * 1984-08-10 1986-03-06 Sony Corp 半導体装置の製造方法
JPS61150278A (ja) * 1984-12-25 1986-07-08 Toshiba Corp 薄膜トランジスタ
JPS6386573A (ja) * 1986-09-30 1988-04-16 Seiko Epson Corp 薄膜トランジスタ
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
EP2230685A3 (en) * 2001-03-12 2013-10-02 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS55151329A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Fabricating method of semiconductor device
JPS56138929A (en) * 1980-03-31 1981-10-29 Canon Inc Component solution for etching
JPH021366A (ja) * 1988-06-09 1990-01-05 Fuji Photo Film Co Ltd 感熱記録材料
JPH021365A (ja) * 1988-06-09 1990-01-05 Honshu Paper Co Ltd 感熱記録体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5550663A (en) * 1978-10-07 1980-04-12 Shunpei Yamazaki Semiconductor device and method of fabricating the same
JPS55151329A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Fabricating method of semiconductor device
JPS56138929A (en) * 1980-03-31 1981-10-29 Canon Inc Component solution for etching
JPH021366A (ja) * 1988-06-09 1990-01-05 Fuji Photo Film Co Ltd 感熱記録材料
JPH021365A (ja) * 1988-06-09 1990-01-05 Honshu Paper Co Ltd 感熱記録体

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136259A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法
JPS6146069A (ja) * 1984-08-10 1986-03-06 Sony Corp 半導体装置の製造方法
JPS61150278A (ja) * 1984-12-25 1986-07-08 Toshiba Corp 薄膜トランジスタ
JPS6386573A (ja) * 1986-09-30 1988-04-16 Seiko Epson Corp 薄膜トランジスタ
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7423290B2 (en) 1990-11-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8026886B2 (en) 1990-11-26 2011-09-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
EP2230685A3 (en) * 2001-03-12 2013-10-02 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film

Also Published As

Publication number Publication date
JPH021367B2 (enrdf_load_stackoverflow) 1990-01-11

Similar Documents

Publication Publication Date Title
US5965904A (en) Semiconductor device comprising silicon semiconductor layer
US5324360A (en) Method for producing non-monocrystalline semiconductor device and apparatus therefor
US4905072A (en) Semiconductor element
JP2880322B2 (ja) 堆積膜の形成方法
TWI434420B (zh) 使用薄膜半導體材料的薄膜式電晶體
US4804640A (en) Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
US20030170939A1 (en) Method of manufacturing gate insulated field effects transistors
JPH0215174A (ja) マイクロ波プラズマｃｖｄ装置
US4625224A (en) Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine
JP2007073699A (ja) 酸化物半導体デバイスの製造方法
AU2020104175A4 (en) Method for preparing c-axis aligned crystalline igzo thin film at low temperature
JPH06224431A (ja) 薄膜トランジスタ及び液晶ディスプレイパネル
JPH06326024A (ja) 半導体基板の製造方法及び非晶質堆積膜の形成方法
JP2001131741A (ja) 触媒スパッタリングによる薄膜形成方法及び薄膜形成装置並びに半導体装置の製造方法
JPS63194326A (ja) 半導体装置の製造方法
CN114540771A (zh) 一种纯无机铅卤钙钛矿吸收层及其制备方法和应用
JPS5884466A (ja) 半導体素子
JP2795736B2 (ja) 堆積膜の形成方法
JPH0682651B2 (ja) 半導体装置用エピタキシヤル絶縁膜とその製造方法
JPH1081968A (ja) 非晶質シリコン膜の作製法
JPH021365B2 (enrdf_load_stackoverflow)
JPH0628313B2 (ja) 半導体素子
JPH06232117A (ja) 絶縁膜の形成方法とこれによる半導体装置の製法
GB2179679A (en) Forming a dielectric film and semiconductor device including said film
JPS59124163A (ja) 半導体素子