JPS57211272A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57211272A JPS57211272A JP56096887A JP9688781A JPS57211272A JP S57211272 A JPS57211272 A JP S57211272A JP 56096887 A JP56096887 A JP 56096887A JP 9688781 A JP9688781 A JP 9688781A JP S57211272 A JPS57211272 A JP S57211272A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- section
- input
- circumference
- contact section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56096887A JPS57211272A (en) | 1981-06-23 | 1981-06-23 | Semiconductor device |
US06/354,397 US4509067A (en) | 1981-06-23 | 1982-03-03 | Semiconductor integrated circuit devices with protective means against overvoltages |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56096887A JPS57211272A (en) | 1981-06-23 | 1981-06-23 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57211272A true JPS57211272A (en) | 1982-12-25 |
JPH0151070B2 JPH0151070B2 (ja) | 1989-11-01 |
Family
ID=14176897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56096887A Granted JPS57211272A (en) | 1981-06-23 | 1981-06-23 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4509067A (ja) |
JP (1) | JPS57211272A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3446928A1 (de) * | 1983-12-26 | 1985-07-04 | Hitachi, Ltd., Tokio/Tokyo | Halbleiteranordnung |
JPH07321318A (ja) * | 1984-06-06 | 1995-12-08 | Texas Instr Inc <Ti> | 半導体デバイス用保護装置 |
JP2020127028A (ja) * | 2014-11-20 | 2020-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1211141B (it) * | 1981-12-04 | 1989-09-29 | Ates Componenti Elettron | Circuito limitatore-trasduttore disegnali in alternata codificati in forma binaria, come stadio d'ingresso di un circuito integrato a igfet. |
JPS58119670A (ja) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | 半導体装置 |
JPS59181679A (ja) * | 1983-03-31 | 1984-10-16 | Nippon Denso Co Ltd | 半導体装置 |
JPS6010765A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | 半導体装置 |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
JPS60211866A (ja) * | 1984-04-05 | 1985-10-24 | Mitsubishi Electric Corp | 半導体集積回路 |
JPS6132464A (ja) * | 1984-07-24 | 1986-02-15 | Nec Corp | Cmos型集積回路装置 |
JPS6153761A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | 半導体装置 |
JPH0732237B2 (ja) * | 1985-04-08 | 1995-04-10 | エスジ−エス−トムソン マイクロエレクトロニクス インコーポレイテッド | 静電放電入力保護回路 |
US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
JPS62122272A (ja) * | 1985-11-22 | 1987-06-03 | Toshiba Corp | 半導体装置 |
US5257095A (en) * | 1985-12-04 | 1993-10-26 | Advanced Micro Devices, Inc. | Common geometry high voltage tolerant long channel and high speed short channel field effect transistors |
US4808861A (en) * | 1986-08-29 | 1989-02-28 | Texas Instruments Incorporated | Integrated circuit to reduce switching noise |
US4789793A (en) * | 1987-02-24 | 1988-12-06 | Texas Instruments Incorporated | Integrated FET circuit to reduce switching noise |
US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
US4882610A (en) * | 1987-10-29 | 1989-11-21 | Deutsche Itt Industries Gmbh | Protective arrangement for MOS circuits |
EP0313722B1 (de) * | 1987-10-29 | 1993-08-04 | Deutsche ITT Industries GmbH | Schutzanordnung für MOS-Schaltungen |
US4959708A (en) * | 1988-08-26 | 1990-09-25 | Delco Electronics Corporation | MOS integrated circuit with vertical shield |
KR920007171A (ko) * | 1990-09-05 | 1992-04-28 | 김광호 | 고신뢰성 반도체장치 |
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5733794A (en) * | 1995-02-06 | 1998-03-31 | Motorola, Inc. | Process for forming a semiconductor device with ESD protection |
KR0145476B1 (ko) * | 1995-04-06 | 1998-08-17 | 김광호 | 칩면적을 줄일 수 있는 패드구조를 가지는 반도체 메모리 장치 |
US5745323A (en) * | 1995-06-30 | 1998-04-28 | Analog Devices, Inc. | Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes |
US5751525A (en) * | 1996-01-05 | 1998-05-12 | Analog Devices, Inc. | EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages |
US5714785A (en) * | 1996-01-16 | 1998-02-03 | Vlsi Technology, Inc. | Asymmetric drain/source layout for robust electrostatic discharge protection |
US5917689A (en) * | 1996-09-12 | 1999-06-29 | Analog Devices, Inc. | General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits |
US5838146A (en) * | 1996-11-12 | 1998-11-17 | Analog Devices, Inc. | Method and apparatus for providing ESD/EOS protection for IC power supply pins |
US6696341B1 (en) | 1998-01-21 | 2004-02-24 | Renesas Technology Corp. | Method of manufacturing a semiconductor device having electrostatic discharge protection element |
JPH11214627A (ja) * | 1998-01-21 | 1999-08-06 | Mitsubishi Electric Corp | Esd保護素子及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5942468B2 (ja) * | 1976-07-14 | 1984-10-15 | 日本電気株式会社 | 集積回路装置 |
JPS54116887A (en) * | 1978-03-02 | 1979-09-11 | Nec Corp | Mos type semiconductor device |
JPS54136278A (en) * | 1978-04-14 | 1979-10-23 | Nec Corp | Semiconductor device |
JPS54140480A (en) * | 1978-04-24 | 1979-10-31 | Hitachi Ltd | Semiconductor device |
JPS55127055A (en) * | 1979-03-15 | 1980-10-01 | Nec Corp | Manufacture of semiconductor device |
US4394674A (en) * | 1979-10-09 | 1983-07-19 | Nippon Electric Co., Ltd. | Insulated gate field effect transistor |
JPS6048106B2 (ja) * | 1979-12-24 | 1985-10-25 | 富士通株式会社 | 半導体集積回路 |
-
1981
- 1981-06-23 JP JP56096887A patent/JPS57211272A/ja active Granted
-
1982
- 1982-03-03 US US06/354,397 patent/US4509067A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3446928A1 (de) * | 1983-12-26 | 1985-07-04 | Hitachi, Ltd., Tokio/Tokyo | Halbleiteranordnung |
JPH07321318A (ja) * | 1984-06-06 | 1995-12-08 | Texas Instr Inc <Ti> | 半導体デバイス用保護装置 |
JP2020127028A (ja) * | 2014-11-20 | 2020-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US4509067A (en) | 1985-04-02 |
JPH0151070B2 (ja) | 1989-11-01 |
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