JPS57204547A - Exposing method - Google Patents

Exposing method

Info

Publication number
JPS57204547A
JPS57204547A JP56089545A JP8954581A JPS57204547A JP S57204547 A JPS57204547 A JP S57204547A JP 56089545 A JP56089545 A JP 56089545A JP 8954581 A JP8954581 A JP 8954581A JP S57204547 A JPS57204547 A JP S57204547A
Authority
JP
Japan
Prior art keywords
wafer
mask
deforming
station
measuring instrument
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56089545A
Other languages
English (en)
Other versions
JPS6349892B2 (ja
Inventor
Motoya Taniguchi
Mitsuyoshi Koizumi
Nobuyuki Akiyama
Yukio Kenbo
Minoru Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56089545A priority Critical patent/JPS57204547A/ja
Priority to US06/387,206 priority patent/US4475223A/en
Priority to DE8282105096T priority patent/DE3266519D1/de
Priority to EP82105096A priority patent/EP0077878B1/en
Publication of JPS57204547A publication Critical patent/JPS57204547A/ja
Publication of JPS6349892B2 publication Critical patent/JPS6349892B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/703—Gap setting, e.g. in proximity printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP56089545A 1981-06-12 1981-06-12 Exposing method Granted JPS57204547A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56089545A JPS57204547A (en) 1981-06-12 1981-06-12 Exposing method
US06/387,206 US4475223A (en) 1981-06-12 1982-06-10 Exposure process and system
DE8282105096T DE3266519D1 (en) 1981-06-12 1982-06-11 Exposure process for transferring a mask pattern to a wafer
EP82105096A EP0077878B1 (en) 1981-06-12 1982-06-11 Exposure process for transferring a mask pattern to a wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56089545A JPS57204547A (en) 1981-06-12 1981-06-12 Exposing method

Publications (2)

Publication Number Publication Date
JPS57204547A true JPS57204547A (en) 1982-12-15
JPS6349892B2 JPS6349892B2 (ja) 1988-10-06

Family

ID=13973781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56089545A Granted JPS57204547A (en) 1981-06-12 1981-06-12 Exposing method

Country Status (4)

Country Link
US (1) US4475223A (ja)
EP (1) EP0077878B1 (ja)
JP (1) JPS57204547A (ja)
DE (1) DE3266519D1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61105841A (ja) * 1984-10-29 1986-05-23 Seiko Epson Corp 露光装置及び露光方法
JPS6231121A (ja) * 1985-08-02 1987-02-10 Canon Inc 被露光物体用チヤツクとそれを利用した縮小投影型露光装置
JPH07209876A (ja) * 1995-01-30 1995-08-11 Canon Inc Ｘ線転写装置及び方法
US6529263B2 (en) 1998-09-04 2003-03-04 Canon Kabushiki Kaisha Position detection apparatus having a plurality of detection sections, and exposure apparatus
JP2010034243A (ja) * 2008-07-28 2010-02-12 Canon Inc 基板保持装置、露光装置およびデバイス製造方法
JP2014502784A (ja) * 2010-12-20 2014-02-03 エーファウ・グループ・エー・タルナー・ゲーエムベーハー ウェハの装着用受け取り手段
JP2014195099A (ja) * 2010-12-14 2014-10-09 Nikon Corp 露光装置及びデバイス製造方法

Families Citing this family (72)

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US4525852A (en) * 1983-03-15 1985-06-25 Micronix Partners Alignment apparatus
US4584699A (en) * 1984-01-06 1986-04-22 The Perkin-Elmer Corporation X-ray anode assembly
US4592081A (en) * 1984-02-10 1986-05-27 Varian Associates, Inc. Adaptive X-ray lithography mask
GB2155201B (en) * 1984-02-24 1988-07-13 Canon Kk An x-ray exposure apparatus
EP0194487B1 (de) * 1985-02-28 1990-07-18 Siemens Aktiengesellschaft Verfahren zur Lagebestimmung eines Objekts in einem automatisierten Fertigungsverfahren und Vorrichtung zur Durchführung des Verfahrens
US4749867A (en) * 1985-04-30 1988-06-07 Canon Kabushiki Kaisha Exposure apparatus
JPS61287229A (ja) * 1985-06-14 1986-12-17 Nippon Kogaku Kk <Nikon> 露光装置、及び該露光装置を用いた回路パターン製造方法
US4700077A (en) * 1986-03-05 1987-10-13 Eaton Corporation Ion beam implanter control system
US4724222A (en) * 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface
EP0253283A3 (de) * 1986-07-15 1988-07-20 Siemens Aktiengesellschaft Anordnung zur Belichtung von Halbleiterscheiben mittels Synchrotronstrahlung in einem Lithographiegerät
DE3639346A1 (de) * 1986-11-18 1988-05-26 Siemens Ag Verfahren und anordnung zur aenderung des abbildungsmassstabes in der roentgenlithografie
JPS63172148A (ja) * 1987-01-12 1988-07-15 Hitachi Ltd 基板表面変形装置
US4870668A (en) * 1987-12-30 1989-09-26 Hampshire Instruments, Inc. Gap sensing/adjustment apparatus and method for a lithography machine
JP2690960B2 (ja) * 1988-09-07 1997-12-17 株式会社日立製作所 拡大投影露光方法及びその装置
US5003567A (en) * 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
US5197089A (en) * 1990-05-21 1993-03-23 Hampshire Instruments, Inc. Pin chuck for lithography system
US5094536A (en) * 1990-11-05 1992-03-10 Litel Instruments Deformable wafer chuck
JP3004045B2 (ja) * 1990-11-19 2000-01-31 株式会社東芝 露光装置
KR0157279B1 (ko) * 1994-03-15 1999-05-01 모리시타 요이찌 노광방법
US6229595B1 (en) 1995-05-12 2001-05-08 The B. F. Goodrich Company Lithography system and method with mask image enlargement
US5724121A (en) * 1995-05-12 1998-03-03 Hughes Danbury Optical Systems, Inc. Mounting member method and apparatus with variable length supports
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US20040137734A1 (en) * 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US7758794B2 (en) * 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US6144719A (en) * 1996-01-22 2000-11-07 Canon Kabushiki Kaisha Exposure method, exposure device and device producing method
KR100542414B1 (ko) * 1996-03-27 2006-05-10 가부시키가이샤 니콘 노광장치및공조장치
JP3377165B2 (ja) * 1997-05-19 2003-02-17 キヤノン株式会社 半導体露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
JP2000228355A (ja) * 1998-12-04 2000-08-15 Canon Inc 半導体露光装置およびデバイス製造方法
US6924884B2 (en) 1999-03-08 2005-08-02 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
US7116401B2 (en) 1999-03-08 2006-10-03 Asml Netherlands B.V. Lithographic projection apparatus using catoptrics in an optical sensor system, optical arrangement, method of measuring, and device manufacturing method
TW490596B (en) 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
US6229871B1 (en) * 1999-07-20 2001-05-08 Euv Llc Projection lithography with distortion compensation using reticle chuck contouring
US8217304B2 (en) 2001-03-29 2012-07-10 Gsi Group Corporation Methods and systems for thermal-based laser processing a multi-material device
JP4383626B2 (ja) * 2000-04-13 2009-12-16 キヤノン株式会社 位置決め装置および露光装置
US6483071B1 (en) * 2000-05-16 2002-11-19 General Scanning Inc. Method and system for precisely positioning a waist of a material-processing laser beam to process microstructures within a laser-processing site
US6556281B1 (en) * 2000-05-23 2003-04-29 Asml Us, Inc. Flexible piezoelectric chuck and method of using the same
US6509952B1 (en) 2000-05-23 2003-01-21 Silicon Valley Group, Inc. Method and system for selective linewidth optimization during a lithographic process
KR100471018B1 (ko) * 2000-11-28 2005-03-08 스미도모쥬기가이고교 가부시키가이샤 두 개의 대상물 간의 갭 조절장치 및 조절방법
JP2002175770A (ja) * 2000-12-08 2002-06-21 Hitachi Ltd 気体排気用試料室及びそれを用いた回路パターン形成装置
US6537844B1 (en) * 2001-05-31 2003-03-25 Kabushiki Kaisha Toshiba Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server
JP2004031024A (ja) * 2002-06-24 2004-01-29 Canon Inc 光発生装置、露光装置、及びデバイスの製造方法
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
TWI277836B (en) * 2002-10-17 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Method and apparatus for forming pattern on thin-substrate or the like
US7641840B2 (en) 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
JP2004335855A (ja) * 2003-05-09 2004-11-25 Rohm Co Ltd 露光装置及び露光方法
SG110196A1 (en) * 2003-09-22 2005-04-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7414701B2 (en) * 2003-10-03 2008-08-19 Asml Holding N.V. Method and systems for total focus deviation adjustments on maskless lithography systems
US7072024B2 (en) 2004-01-20 2006-07-04 Nikon Corporation Lithographic projection method and apparatus
US6980279B2 (en) 2004-01-22 2005-12-27 Nikon Corporation Interferometer system for measuring a height of wafer stage
US8046049B2 (en) * 2004-02-23 2011-10-25 Biosense Webster, Inc. Robotically guided catheter
WO2005083524A2 (de) * 2004-02-26 2005-09-09 Carl Zeiss Smt Ag Verfahren zum ausrichten der oberfläche eines substrats
US7440081B2 (en) * 2004-11-05 2008-10-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and substrate table
US7372549B2 (en) * 2005-06-24 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
EP2095946A1 (en) * 2008-02-27 2009-09-02 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A system for patterning flexible foils
DE102008052100B4 (de) * 2008-10-08 2015-10-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flexibel verformbares Halteelement für Substrate
GB2469112A (en) 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Wafer support using controlled capillary liquid layer to hold and release wafer
JP5670351B2 (ja) * 2009-02-22 2015-02-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機械装置のための準備ユニット
CN104658950B (zh) * 2010-12-20 2018-01-19 Ev 集团 E·索尔纳有限责任公司 用于保持晶片的容纳装置及用于将晶片对齐的装置和方法
NL2008833A (en) * 2011-06-21 2012-12-28 Asml Netherlands Bv Lithographic apparatus, method of deforming a substrate table and device manufacturing method.
CN104685095B (zh) 2012-04-19 2017-12-29 因特瓦克公司 用于制造太阳能电池的双掩模装置
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
SG11201406893XA (en) 2012-04-26 2014-11-27 Intevac Inc System architecture for vacuum processing
FR3014212B1 (fr) * 2013-12-04 2017-05-26 Fogale Nanotech Dispositif et procede de positionnement de masque de photolithographie par methode optique sans contact
WO2016022728A1 (en) * 2014-08-05 2016-02-11 Intevac, Inc. Implant masking and alignment
JP2016143706A (ja) * 2015-01-30 2016-08-08 株式会社東芝 基板保持装置および半導体装置の製造方法
CN104991427B (zh) * 2015-08-12 2017-12-08 京东方科技集团股份有限公司 一种曝光装置及曝光方法
KR101911766B1 (ko) * 2016-12-08 2018-10-26 한양대학교 산학협력단 반도체 기판용 진공 척 및 이를 이용한 검사 대상물의 검사 방법
US11251019B2 (en) * 2016-12-15 2022-02-15 Toyota Jidosha Kabushiki Kaisha Plasma device
JP6863199B2 (ja) 2017-09-25 2021-04-21 トヨタ自動車株式会社 プラズマ処理装置

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JPS5252579A (en) * 1975-10-27 1977-04-27 Canon Inc Clearance adjusng method
JPS5613726A (en) * 1979-07-14 1981-02-10 Nippon Kogaku Kk <Nikon> Gap setter in proximity-aligner
JPS5723418A (en) * 1980-07-17 1982-02-06 Showa Electric Wire & Cable Co Wire shield cable

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FR2371716A1 (fr) * 1976-11-19 1978-06-16 Thomson Csf Appareil photorepeteur de masques
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JPS5447581A (en) * 1977-09-22 1979-04-14 Hitachi Ltd Mask aligner
GB2063523B (en) * 1978-10-20 1982-12-15 Hitachi Ltd Wafer position setting apparatus
USRE30601E (en) * 1978-12-11 1981-05-05 International Business Machines Corporation Alignment apparatus
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JPS5252579A (en) * 1975-10-27 1977-04-27 Canon Inc Clearance adjusng method
JPS5613726A (en) * 1979-07-14 1981-02-10 Nippon Kogaku Kk <Nikon> Gap setter in proximity-aligner
JPS5723418A (en) * 1980-07-17 1982-02-06 Showa Electric Wire & Cable Co Wire shield cable

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61105841A (ja) * 1984-10-29 1986-05-23 Seiko Epson Corp 露光装置及び露光方法
JPH0582728B2 (ja) * 1984-10-29 1993-11-22 Seiko Epson Corp
JPS6231121A (ja) * 1985-08-02 1987-02-10 Canon Inc 被露光物体用チヤツクとそれを利用した縮小投影型露光装置
JPH07209876A (ja) * 1995-01-30 1995-08-11 Canon Inc Ｘ線転写装置及び方法
US6529263B2 (en) 1998-09-04 2003-03-04 Canon Kabushiki Kaisha Position detection apparatus having a plurality of detection sections, and exposure apparatus
US7072023B2 (en) 1998-09-04 2006-07-04 Canon Kabushiki Kaisha Position detection apparatus having a plurality of detection sections, and exposure apparatus
JP2010034243A (ja) * 2008-07-28 2010-02-12 Canon Inc 基板保持装置、露光装置およびデバイス製造方法
JP2014195099A (ja) * 2010-12-14 2014-10-09 Nikon Corp 露光装置及びデバイス製造方法
US9575417B2 (en) 2010-12-14 2017-02-21 Nikon Corporation Exposure apparatus including a mask holding device which holds a periphery area of a pattern area of the mask from above
JP2014502784A (ja) * 2010-12-20 2014-02-03 エーファウ・グループ・エー・タルナー・ゲーエムベーハー ウェハの装着用受け取り手段
US9312161B2 (en) 2010-12-20 2016-04-12 Ev Group E. Thallner Gmbh Accommodating device for retaining wafers
TWI618130B (zh) * 2010-12-20 2018-03-11 Ｅｖ集團Ｅ塔那有限公司 用於晶圓安裝的接收構件
US10325798B2 (en) 2010-12-20 2019-06-18 Ev Group E. Thallner Gmbh Accommodating device for retaining wafers
US10886156B2 (en) 2010-12-20 2021-01-05 Ev Group E. Thallner Gmbh Accomodating device for retaining wafers
US11355374B2 (en) 2010-12-20 2022-06-07 Ev Group E. Thallner Gmbh Accommodating device for retaining wafers
US11756818B2 (en) 2010-12-20 2023-09-12 Ev Group E. Thallner Gmbh Accommodating device for retaining wafers

Also Published As

Publication number Publication date
JPS6349892B2 (ja) 1988-10-06
US4475223A (en) 1984-10-02
EP0077878B1 (en) 1985-09-25
DE3266519D1 (en) 1985-10-31
EP0077878A1 (en) 1983-05-04

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