JPS5588332A - Method of mask alignment - Google Patents
Method of mask alignmentInfo
- Publication number
- JPS5588332A JPS5588332A JP16317578A JP16317578A JPS5588332A JP S5588332 A JPS5588332 A JP S5588332A JP 16317578 A JP16317578 A JP 16317578A JP 16317578 A JP16317578 A JP 16317578A JP S5588332 A JPS5588332 A JP S5588332A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- measuring apparatus
- mask
- substrate base
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE: To set accurately a gap between a substrate and a mask without touching by a method wherein a distance between the mask and the substrate is detected on a gap measuring apparatus provided on substrate side, and the detected distance is transferred to a gap measuring apparatus provided on mask side.
CONSTITUTION: A plural gap measuring apparatus 7 is enclosed in a substrate base 6. Next, a reference plate 3 is placed on the substrate base 6, the distance is measured and then the gap measuring apparatus 7 is zeroed. Then, the reference plate 3 is demounted, a mask 1 is brought near to the substrate 6, and a gap between a reference plane 8 and the substrate base 6 is measured. The measured value is set as an initial value of a gap measuring apparatus 10 on mask side. After that, a maks holder 9 is kept apart from the substrate base 6. Next, a wafer with a resist applied thereon is placed on the substrate base 6. Then, the mask holder 9 is moved to come near to the substrate base 6, a gap to the substrate base 6 is measured on the gap measuring apparatus 10 until a given value is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16317578A JPS5588332A (en) | 1978-12-26 | 1978-12-26 | Method of mask alignment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16317578A JPS5588332A (en) | 1978-12-26 | 1978-12-26 | Method of mask alignment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5588332A true JPS5588332A (en) | 1980-07-04 |
Family
ID=15768661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16317578A Pending JPS5588332A (en) | 1978-12-26 | 1978-12-26 | Method of mask alignment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5588332A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6954275B2 (en) * | 2000-08-01 | 2005-10-11 | Boards Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
| US7432634B2 (en) | 2000-10-27 | 2008-10-07 | Board Of Regents, University Of Texas System | Remote center compliant flexure device |
| US7535549B2 (en) | 2004-06-03 | 2009-05-19 | Board Of Regents, University Of Texas System | System and method for improvement of alignment and overlay for microlithography |
-
1978
- 1978-12-26 JP JP16317578A patent/JPS5588332A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6954275B2 (en) * | 2000-08-01 | 2005-10-11 | Boards Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
| US7432634B2 (en) | 2000-10-27 | 2008-10-07 | Board Of Regents, University Of Texas System | Remote center compliant flexure device |
| US7535549B2 (en) | 2004-06-03 | 2009-05-19 | Board Of Regents, University Of Texas System | System and method for improvement of alignment and overlay for microlithography |
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