JPS57153475A - Multi layer electrode - Google Patents

Multi layer electrode

Info

Publication number
JPS57153475A
JPS57153475A JP56038465A JP3846581A JPS57153475A JP S57153475 A JPS57153475 A JP S57153475A JP 56038465 A JP56038465 A JP 56038465A JP 3846581 A JP3846581 A JP 3846581A JP S57153475 A JPS57153475 A JP S57153475A
Authority
JP
Japan
Prior art keywords
schottky
gaas
vaporized
comes
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56038465A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359580B2 (enrdf_load_stackoverflow
Inventor
Masaoki Ishikawa
Asamitsu Tosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56038465A priority Critical patent/JPS57153475A/ja
Publication of JPS57153475A publication Critical patent/JPS57153475A/ja
Publication of JPH0359580B2 publication Critical patent/JPH0359580B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56038465A 1981-03-17 1981-03-17 Multi layer electrode Granted JPS57153475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56038465A JPS57153475A (en) 1981-03-17 1981-03-17 Multi layer electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56038465A JPS57153475A (en) 1981-03-17 1981-03-17 Multi layer electrode

Publications (2)

Publication Number Publication Date
JPS57153475A true JPS57153475A (en) 1982-09-22
JPH0359580B2 JPH0359580B2 (enrdf_load_stackoverflow) 1991-09-11

Family

ID=12525994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56038465A Granted JPS57153475A (en) 1981-03-17 1981-03-17 Multi layer electrode

Country Status (1)

Country Link
JP (1) JPS57153475A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181676A (ja) * 1983-03-31 1984-10-16 Fujitsu Ltd 半導体装置
JPS61127181A (ja) * 1984-11-26 1986-06-14 Fujitsu Ltd 電界効果型化合物半導体装置の製造方法
JPS6384154A (ja) * 1986-09-29 1988-04-14 Toshiba Corp 半導体装置の製造方法
JPH01187877A (ja) * 1988-01-22 1989-07-27 Toshiba Corp 化合物半導体装置及びその製造方法
US4951121A (en) * 1984-11-14 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor device with a 3-ply gate electrode
JPH07161659A (ja) * 1993-12-07 1995-06-23 Nec Corp 半導体装置およびその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181676A (ja) * 1983-03-31 1984-10-16 Fujitsu Ltd 半導体装置
US4951121A (en) * 1984-11-14 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor device with a 3-ply gate electrode
JPS61127181A (ja) * 1984-11-26 1986-06-14 Fujitsu Ltd 電界効果型化合物半導体装置の製造方法
JPS6384154A (ja) * 1986-09-29 1988-04-14 Toshiba Corp 半導体装置の製造方法
JPH01187877A (ja) * 1988-01-22 1989-07-27 Toshiba Corp 化合物半導体装置及びその製造方法
JPH07161659A (ja) * 1993-12-07 1995-06-23 Nec Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0359580B2 (enrdf_load_stackoverflow) 1991-09-11

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