JPS5690548A - Manufacture of semiconductor device by master slice system - Google Patents
Manufacture of semiconductor device by master slice systemInfo
- Publication number
- JPS5690548A JPS5690548A JP15030779A JP15030779A JPS5690548A JP S5690548 A JPS5690548 A JP S5690548A JP 15030779 A JP15030779 A JP 15030779A JP 15030779 A JP15030779 A JP 15030779A JP S5690548 A JPS5690548 A JP S5690548A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- collector
- holes
- emitter
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11801—Masterslice integrated circuits using bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15030779A JPS5690548A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device by master slice system |
CA000364711A CA1141869A (en) | 1979-11-20 | 1980-11-14 | Method for manufacturing a semiconductor device |
US06/207,737 US4388755A (en) | 1979-11-20 | 1980-11-17 | Structure for and method of manufacturing a semiconductor device by the master slice method |
EP80304117A EP0029369B1 (en) | 1979-11-20 | 1980-11-18 | A method of manufacturing a semiconductor device |
DE8080304117T DE3071906D1 (en) | 1979-11-20 | 1980-11-18 | A method of manufacturing a semiconductor device |
IE2401/80A IE52447B1 (en) | 1979-11-20 | 1980-11-19 | A method of manufacturing a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15030779A JPS5690548A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device by master slice system |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5690548A true JPS5690548A (en) | 1981-07-22 |
JPS6349376B2 JPS6349376B2 (ja) | 1988-10-04 |
Family
ID=15494139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15030779A Granted JPS5690548A (en) | 1979-11-20 | 1979-11-20 | Manufacture of semiconductor device by master slice system |
Country Status (6)
Country | Link |
---|---|
US (1) | US4388755A (ja) |
EP (1) | EP0029369B1 (ja) |
JP (1) | JPS5690548A (ja) |
CA (1) | CA1141869A (ja) |
DE (1) | DE3071906D1 (ja) |
IE (1) | IE52447B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213448A (ja) * | 1982-06-07 | 1983-12-12 | Hitachi Ltd | 負荷駆動方式 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211248A (en) * | 1981-06-22 | 1982-12-25 | Hitachi Ltd | Semiconductor integrated circuit device |
JPS5830235A (ja) * | 1981-08-18 | 1983-02-22 | Fujitsu Ltd | ゲ−トアレイ |
FR2524206B1 (fr) * | 1982-03-26 | 1985-12-13 | Thomson Csf Mat Tel | Circuit integre prediffuse, et procede d'interconnexion des cellules de ce circuit |
KR870009476A (ko) * | 1986-03-31 | 1987-10-27 | 이그자 코오포레이숀 | 프로그램 가능 트랜지스터 및 그의 제조방법 |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
GB2196787A (en) * | 1986-10-31 | 1988-05-05 | Stc Plc | Semiconductor chip manufacture |
JPH03218668A (ja) * | 1989-11-24 | 1991-09-26 | Nec Ic Microcomput Syst Ltd | 半導体集積回路装置 |
JP2953755B2 (ja) * | 1990-07-16 | 1999-09-27 | 株式会社東芝 | マスタスライス方式の半導体装置 |
JP3145694B2 (ja) * | 1990-08-28 | 2001-03-12 | 日本電気株式会社 | 半導体装置 |
CA2119523C (en) * | 1994-03-21 | 1998-12-08 | Clinton Cedric Norrad | Animal trap |
US6236072B1 (en) * | 1998-11-12 | 2001-05-22 | Telefonaktiebolaget Lm Ericsson (Publ) | Method and system for emitter partitioning for SiGe RF power transistors |
JP2003045882A (ja) | 2001-07-27 | 2003-02-14 | Nec Corp | 半導体装置及びその設計方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5073577A (ja) * | 1973-10-31 | 1975-06-17 | ||
JPS51149776A (en) * | 1975-06-17 | 1976-12-22 | Mitsubishi Electric Corp | Semiconductor device for power |
JPS5393787A (en) * | 1977-01-27 | 1978-08-17 | Nec Home Electronics Ltd | Production of semiconductor |
JPS53147485A (en) * | 1977-05-27 | 1978-12-22 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS54101281A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Logic circuit |
JPS5561059A (en) * | 1978-10-31 | 1980-05-08 | Nec Corp | Semiconductor ic device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3747088A (en) * | 1970-12-30 | 1973-07-17 | Analog Devices Inc | Solid state digital to analog converter |
US3884732A (en) * | 1971-07-29 | 1975-05-20 | Ibm | Monolithic storage array and method of making |
US3995304A (en) * | 1972-01-10 | 1976-11-30 | Teledyne, Inc. | D/A bit switch |
US3895977A (en) * | 1973-12-20 | 1975-07-22 | Harris Corp | Method of fabricating a bipolar transistor |
-
1979
- 1979-11-20 JP JP15030779A patent/JPS5690548A/ja active Granted
-
1980
- 1980-11-14 CA CA000364711A patent/CA1141869A/en not_active Expired
- 1980-11-17 US US06/207,737 patent/US4388755A/en not_active Expired - Lifetime
- 1980-11-18 DE DE8080304117T patent/DE3071906D1/de not_active Expired
- 1980-11-18 EP EP80304117A patent/EP0029369B1/en not_active Expired
- 1980-11-19 IE IE2401/80A patent/IE52447B1/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5073577A (ja) * | 1973-10-31 | 1975-06-17 | ||
JPS51149776A (en) * | 1975-06-17 | 1976-12-22 | Mitsubishi Electric Corp | Semiconductor device for power |
JPS5393787A (en) * | 1977-01-27 | 1978-08-17 | Nec Home Electronics Ltd | Production of semiconductor |
JPS53147485A (en) * | 1977-05-27 | 1978-12-22 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS54101281A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Logic circuit |
JPS5561059A (en) * | 1978-10-31 | 1980-05-08 | Nec Corp | Semiconductor ic device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58213448A (ja) * | 1982-06-07 | 1983-12-12 | Hitachi Ltd | 負荷駆動方式 |
JPH0587987B2 (ja) * | 1982-06-07 | 1993-12-20 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
EP0029369A2 (en) | 1981-05-27 |
EP0029369B1 (en) | 1987-02-04 |
IE52447B1 (en) | 1987-11-11 |
CA1141869A (en) | 1983-02-22 |
DE3071906D1 (en) | 1987-03-12 |
JPS6349376B2 (ja) | 1988-10-04 |
US4388755A (en) | 1983-06-21 |
EP0029369A3 (en) | 1983-06-22 |
IE802401L (en) | 1981-05-20 |
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