JPS5571060A - Manufacture of i2l semiconductor device - Google Patents

Manufacture of i2l semiconductor device

Info

Publication number
JPS5571060A
JPS5571060A JP14416478A JP14416478A JPS5571060A JP S5571060 A JPS5571060 A JP S5571060A JP 14416478 A JP14416478 A JP 14416478A JP 14416478 A JP14416478 A JP 14416478A JP S5571060 A JPS5571060 A JP S5571060A
Authority
JP
Japan
Prior art keywords
domain
block
circuit
optimal
constitute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14416478A
Other languages
Japanese (ja)
Inventor
Mitsuo Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14416478A priority Critical patent/JPS5571060A/en
Publication of JPS5571060A publication Critical patent/JPS5571060A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]

Abstract

PURPOSE:To facilitate a layout change by forming a block with a domain having such pattern as is optimal to constitute an FF circuit and with a domain having such patern as is optimal to constitute a logical gate around said domain. CONSTITUTION:A single unit of gate circuit is provided in plural to each upper and lower domain of an FF circuit, and one block is obtained through providing a wiring channel 14 with which to wire the gate circuit on both upper and lower parts and a ground wiring part 15 beneath the lower wiring channel 14. An I<2>L semiconductor domain is formed by arranging the block in plural vertically and horizontally.
JP14416478A 1978-11-24 1978-11-24 Manufacture of i2l semiconductor device Pending JPS5571060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14416478A JPS5571060A (en) 1978-11-24 1978-11-24 Manufacture of i2l semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14416478A JPS5571060A (en) 1978-11-24 1978-11-24 Manufacture of i2l semiconductor device

Publications (1)

Publication Number Publication Date
JPS5571060A true JPS5571060A (en) 1980-05-28

Family

ID=15355681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14416478A Pending JPS5571060A (en) 1978-11-24 1978-11-24 Manufacture of i2l semiconductor device

Country Status (1)

Country Link
JP (1) JPS5571060A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882533A (en) * 1981-07-10 1983-05-18 Hitachi Ltd Semiconductor integrated circuit device
JPS6054334U (en) * 1983-09-22 1985-04-16 日本電気株式会社 integrated circuit device
JPS6144444A (en) * 1984-08-09 1986-03-04 Nec Corp Semiconductor ic

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUTTS=1977US *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5882533A (en) * 1981-07-10 1983-05-18 Hitachi Ltd Semiconductor integrated circuit device
JPS6054334U (en) * 1983-09-22 1985-04-16 日本電気株式会社 integrated circuit device
JPS6144444A (en) * 1984-08-09 1986-03-04 Nec Corp Semiconductor ic

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