JPS5735367A - Manufacture of integrated circuit - Google Patents

Manufacture of integrated circuit

Info

Publication number
JPS5735367A
JPS5735367A JP11061080A JP11061080A JPS5735367A JP S5735367 A JPS5735367 A JP S5735367A JP 11061080 A JP11061080 A JP 11061080A JP 11061080 A JP11061080 A JP 11061080A JP S5735367 A JPS5735367 A JP S5735367A
Authority
JP
Japan
Prior art keywords
type
fixed
transistor
polycrystal silicon
layer pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11061080A
Other languages
Japanese (ja)
Inventor
Aritoyo Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11061080A priority Critical patent/JPS5735367A/en
Publication of JPS5735367A publication Critical patent/JPS5735367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1022—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate transistor effect of an ion implanted layer by crossing polycrystal silicon layers on isolated diffused layer patterns beforehand. CONSTITUTION:The first type transistor Tr61 is formed and fixed by the first type diffused layer pattern 58 and the corssing of the polycrystal silicon layer patterns 59 and 60. A second type transistor Tr65 is formed and fixed by the second type diffused layer pattern 62 and the crossing of the polycrystal silicon layers 63 and 64. A high potential power source line 66 and a low potential power source line 67 are formed by a metallic wiring layer. First and second type switching contact 68 which connects the input signal lines for the first and second type Trs is formed and fixed. The transistor effect of the horizontal part of the first type Tr61 is eliminated by the ion implanted layer pattern.
JP11061080A 1980-08-12 1980-08-12 Manufacture of integrated circuit Pending JPS5735367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11061080A JPS5735367A (en) 1980-08-12 1980-08-12 Manufacture of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11061080A JPS5735367A (en) 1980-08-12 1980-08-12 Manufacture of integrated circuit

Publications (1)

Publication Number Publication Date
JPS5735367A true JPS5735367A (en) 1982-02-25

Family

ID=14540184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11061080A Pending JPS5735367A (en) 1980-08-12 1980-08-12 Manufacture of integrated circuit

Country Status (1)

Country Link
JP (1) JPS5735367A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316174A (en) * 1989-03-17 1991-01-24 Kawasaki Steel Corp Fundamental cell and arrangement structure of fundamental cells
US6230635B1 (en) * 1996-12-27 2001-05-15 Sumitomo Osaka Cement Co. Ltd. Device and method for combustion of fuel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0316174A (en) * 1989-03-17 1991-01-24 Kawasaki Steel Corp Fundamental cell and arrangement structure of fundamental cells
US6230635B1 (en) * 1996-12-27 2001-05-15 Sumitomo Osaka Cement Co. Ltd. Device and method for combustion of fuel
US6389998B2 (en) 1996-12-27 2002-05-21 Sumitomo Osaka Cement Co., Ltd. Device and method for combustion of fuel
US6439140B2 (en) 1996-12-27 2002-08-27 Sumitomo Osaka Cement Co., Ltd. Device and method for combustion of fuel

Similar Documents

Publication Publication Date Title
MY107475A (en) Semiconductor device and method for producing the same.
JPS5375781A (en) Method of producing mos semiconductor circuit
DE3172424D1 (en) Substrate bias generator for mos integrated circuit
BE839579A (en) METHOD OF MANUFACTURING INTEGRATED CIRCUIT REGIONS DEFINED BY EMBEDDED ELECTRICAL INSULATION
JPS56162875A (en) Semiconductor device
JPS5735367A (en) Manufacture of integrated circuit
JPS52156580A (en) Semiconductor integrated circuit device and its production
JPS5371584A (en) Semiconductor integrated circuit device
JPS54136141A (en) Magnetic bubble memory element and its manufacture
JPS5553440A (en) Large-scale integrated circuit
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS51117886A (en) Large scale semiconductor integrated circuit
JPS5613759A (en) Hybrid integrated circuit
JPS5289478A (en) Mos integrated circuit
JPS5387186A (en) Semiconductor ingegrated circuit device
JPS51117588A (en) Manufacturing method of semiconductor equipment
JPS5336184A (en) Semiconductor integrated circuit
JPS5571060A (en) Manufacture of i2l semiconductor device
JPS52130580A (en) High densityintegrated circuit device
JPS5245293A (en) Device for electronic circuit
JPS57112048A (en) Master slice type semiconductor integrated circuit device
JPS5310282A (en) Production of mos type semiconductor integrated circuit
GB2001472A (en) Integrated circuit devices including a structure for crossing information signals
JPS57114287A (en) Semiconductor device
JPS5643757A (en) Gallium arsenic type integrated circuit