JPS5621321A - Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus - Google Patents

Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus

Info

Publication number
JPS5621321A
JPS5621321A JP9583979A JP9583979A JPS5621321A JP S5621321 A JPS5621321 A JP S5621321A JP 9583979 A JP9583979 A JP 9583979A JP 9583979 A JP9583979 A JP 9583979A JP S5621321 A JPS5621321 A JP S5621321A
Authority
JP
Japan
Prior art keywords
circuit
cpu5
signal
coefficient
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9583979A
Other languages
English (en)
Other versions
JPS5719857B2 (ja
Inventor
Yoshimi Yamashita
Sumio Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9583979A priority Critical patent/JPS5621321A/ja
Priority to EP80302557A priority patent/EP0023810B1/en
Priority to DE8080302557T priority patent/DE3066694D1/de
Publication of JPS5621321A publication Critical patent/JPS5621321A/ja
Publication of JPS5719857B2 publication Critical patent/JPS5719857B2/ja
Priority to US06/387,678 priority patent/US4443704A/en
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP9583979A 1979-07-27 1979-07-27 Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus Granted JPS5621321A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9583979A JPS5621321A (en) 1979-07-27 1979-07-27 Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus
EP80302557A EP0023810B1 (en) 1979-07-27 1980-07-25 Method of electron beam exposure
DE8080302557T DE3066694D1 (en) 1979-07-27 1980-07-25 Method of electron beam exposure
US06/387,678 US4443704A (en) 1979-07-27 1982-06-11 Method of electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9583979A JPS5621321A (en) 1979-07-27 1979-07-27 Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus

Publications (2)

Publication Number Publication Date
JPS5621321A true JPS5621321A (en) 1981-02-27
JPS5719857B2 JPS5719857B2 (ja) 1982-04-24

Family

ID=14148539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9583979A Granted JPS5621321A (en) 1979-07-27 1979-07-27 Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus

Country Status (4)

Country Link
US (1) US4443704A (ja)
EP (1) EP0023810B1 (ja)
JP (1) JPS5621321A (ja)
DE (1) DE3066694D1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114818A (ja) * 1982-12-21 1984-07-03 Toshiba Corp 電子ビ−ムパタ−ン描画方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3172847D1 (en) * 1981-11-30 1985-12-12 Ibm Method and apparatus for improving the uniformness of patterns generated by electron beam lithography
JPS5968928A (ja) * 1982-10-13 1984-04-19 Pioneer Electronic Corp 半導体装置の製造方法
JPS59150422A (ja) * 1983-01-31 1984-08-28 Fujitsu Ltd 露光処理方法
JPS6164041A (ja) * 1984-09-03 1986-04-02 Matsushita Electronics Corp マグネトロン構体装着装置
JPS62141202U (ja) * 1986-02-28 1987-09-05
US4724222A (en) * 1986-04-28 1988-02-09 American Telephone And Telegraph Company, At&T Bell Laboratories Wafer chuck comprising a curved reference surface
US5172331A (en) * 1989-12-18 1992-12-15 Fujitsu Limited Apparatus and method for effecting exposure of sample to charged particle beam
US5136169A (en) * 1991-04-05 1992-08-04 Massachusetts Institute Of Technology Energy beam locating
KR940009972B1 (ko) * 1991-07-26 1994-10-19 삼성전자 주식회사 텔레비젼의 전원 제어회로 및 방법
JP3453009B2 (ja) * 1995-07-20 2003-10-06 富士通株式会社 電子ビーム露光装置及びこの装置に於けるマーク位置検出方法
JP3544438B2 (ja) * 1996-09-30 2004-07-21 セイコーインスツルメンツ株式会社 イオンビームによる加工装置
JPH11191529A (ja) * 1997-12-25 1999-07-13 Nikon Corp 荷電ビーム露光方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857041A (en) * 1969-07-03 1974-12-24 Texas Instruments Inc Electron beam patterning system for use in production of semiconductor devices
US3644700A (en) * 1969-12-15 1972-02-22 Ibm Method and apparatus for controlling an electron beam
FR2181467B1 (ja) * 1972-04-25 1974-07-26 Thomson Csf
FR39852E (fr) * 1972-06-30 1932-03-24 Ig Farbenindustrie Ag Procédé de production de colorants solides pour cuve
FR2220073B1 (ja) * 1973-03-02 1983-04-15 Thomson Csf
JPS5398781A (en) * 1976-11-25 1978-08-29 Jeol Ltd Electron ray exposure unit
JPS5472980A (en) * 1977-11-24 1979-06-11 Hitachi Ltd Electron-beam drawing unit
US4137459A (en) * 1978-02-13 1979-01-30 International Business Machines Corporation Method and apparatus for applying focus correction in E-beam system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59114818A (ja) * 1982-12-21 1984-07-03 Toshiba Corp 電子ビ−ムパタ−ン描画方法
JPH058566B2 (ja) * 1982-12-21 1993-02-02 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
US4443704A (en) 1984-04-17
EP0023810B1 (en) 1984-02-22
JPS5719857B2 (ja) 1982-04-24
EP0023810A1 (en) 1981-02-11
DE3066694D1 (en) 1984-03-29

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