JPS5662322A - Electronic beam exposure method - Google Patents

Electronic beam exposure method

Info

Publication number
JPS5662322A
JPS5662322A JP13844179A JP13844179A JPS5662322A JP S5662322 A JPS5662322 A JP S5662322A JP 13844179 A JP13844179 A JP 13844179A JP 13844179 A JP13844179 A JP 13844179A JP S5662322 A JPS5662322 A JP S5662322A
Authority
JP
Japan
Prior art keywords
electronic beam
detected
pattern
marking position
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13844179A
Other languages
Japanese (ja)
Other versions
JPS6335095B2 (en
Inventor
Toshihiko Osada
Nobuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13844179A priority Critical patent/JPS5662322A/en
Publication of JPS5662322A publication Critical patent/JPS5662322A/en
Publication of JPS6335095B2 publication Critical patent/JPS6335095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To make it possible to execute direct exposure of wafer at a high speed in such a manner as to make compensation of pattern data only by obtaining a new marking position, by compensating an electronic beam scanning position with a memorized marking position and a detected marking position. CONSTITUTION:A stage 7 is shifted by a servomotor on the basis of a command from an electronic calculator 18. Position of the stage 7 is detected by a laser interference meter 9, this detected signal is given to a pattern compensation circuit 13 to compensate pattern data from a pattern generating circuit 14 and then to deflect an electronic beam from an electronic beam generating unit 2 in accordance with the data converted to an analog signal.
JP13844179A 1979-10-26 1979-10-26 Electronic beam exposure method Granted JPS5662322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13844179A JPS5662322A (en) 1979-10-26 1979-10-26 Electronic beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13844179A JPS5662322A (en) 1979-10-26 1979-10-26 Electronic beam exposure method

Publications (2)

Publication Number Publication Date
JPS5662322A true JPS5662322A (en) 1981-05-28
JPS6335095B2 JPS6335095B2 (en) 1988-07-13

Family

ID=15222058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13844179A Granted JPS5662322A (en) 1979-10-26 1979-10-26 Electronic beam exposure method

Country Status (1)

Country Link
JP (1) JPS5662322A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130133A (en) * 1983-12-16 1985-07-11 Matsushita Electric Ind Co Ltd Apparatus for aligning semiconductor device
JPS60140822A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Electron-ray drawing device
EP0248588A2 (en) * 1986-05-27 1987-12-09 Fujitsu Limited Electron beam exposure system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113572A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Centering method for electronic ray picture and the unit using the sai d method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113572A (en) * 1975-03-31 1976-10-06 Hitachi Ltd Centering method for electronic ray picture and the unit using the sai d method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130133A (en) * 1983-12-16 1985-07-11 Matsushita Electric Ind Co Ltd Apparatus for aligning semiconductor device
JPH0576779B2 (en) * 1983-12-16 1993-10-25 Matsushita Electric Ind Co Ltd
JPS60140822A (en) * 1983-12-28 1985-07-25 Hitachi Ltd Electron-ray drawing device
EP0248588A2 (en) * 1986-05-27 1987-12-09 Fujitsu Limited Electron beam exposure system

Also Published As

Publication number Publication date
JPS6335095B2 (en) 1988-07-13

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