JPS5787131A - Exposing method of electron beam - Google Patents

Exposing method of electron beam

Info

Publication number
JPS5787131A
JPS5787131A JP16378580A JP16378580A JPS5787131A JP S5787131 A JPS5787131 A JP S5787131A JP 16378580 A JP16378580 A JP 16378580A JP 16378580 A JP16378580 A JP 16378580A JP S5787131 A JPS5787131 A JP S5787131A
Authority
JP
Japan
Prior art keywords
region
distance
height
gain
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16378580A
Other languages
Japanese (ja)
Other versions
JPS6320376B2 (en
Inventor
Teruaki Okino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP16378580A priority Critical patent/JPS5787131A/en
Publication of JPS5787131A publication Critical patent/JPS5787131A/en
Publication of JPS6320376B2 publication Critical patent/JPS6320376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Abstract

PURPOSE:To improve the accuracy of overlapping making the size of each region to be exposed uniform by controlling a gain of a deflection amplifier so as to correct the height of each region of photo plate and the surface of a reference plate. CONSTITUTION:The distance between M1 and M3 on a substrate 11 of conductive material is obtained by detecting 12 reflected electron of an electron beam scanned M1 and M2. Then the center of deflection system region and the center of the distance are brought together by moving the rack. Again M1 and M3 are scanned to determine the distance and select a gain controlling signal for the deflection system amplifier 6 so as to make the measured value correspond to the first measurement. M2 and M4 in the direction of Y is likewise selected. The height H0 of the reference plate 11 is measured 13. By moving the rack, the height H0 of the first exposure region of the photo plate is measured 13. The controlling gain of the deflection amplifier is minutely controlled using a computer 5 according to H0-H1. As a result, the photo plate 7 is exposed with a width same as the distance of two marks, each exposed region being of the same size with no overlapping or gaps.
JP16378580A 1980-11-20 1980-11-20 Exposing method of electron beam Granted JPS5787131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16378580A JPS5787131A (en) 1980-11-20 1980-11-20 Exposing method of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16378580A JPS5787131A (en) 1980-11-20 1980-11-20 Exposing method of electron beam

Publications (2)

Publication Number Publication Date
JPS5787131A true JPS5787131A (en) 1982-05-31
JPS6320376B2 JPS6320376B2 (en) 1988-04-27

Family

ID=15780657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16378580A Granted JPS5787131A (en) 1980-11-20 1980-11-20 Exposing method of electron beam

Country Status (1)

Country Link
JP (1) JPS5787131A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150422A (en) * 1983-01-31 1984-08-28 Fujitsu Ltd Exposure process
JPS60741A (en) * 1983-06-16 1985-01-05 Toshiba Mach Co Ltd Exposure by electron beam
JPH01201919A (en) * 1988-02-05 1989-08-14 Jeol Ltd Charge beam lithography equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498577A (en) * 1978-01-20 1979-08-03 Nippon Telegr & Teleph Corp <Ntt> Correction method for electron beam scanning position
JPS5530811A (en) * 1978-08-25 1980-03-04 Chiyou Lsi Gijutsu Kenkyu Kumiai Single field alignment method
JPS5536990A (en) * 1979-07-16 1980-03-14 Toshiba Corp Apparatus for applying electron beam
JPS55133887A (en) * 1979-04-07 1980-10-18 Hitachi Ltd Electron beam radiation apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498577A (en) * 1978-01-20 1979-08-03 Nippon Telegr & Teleph Corp <Ntt> Correction method for electron beam scanning position
JPS5530811A (en) * 1978-08-25 1980-03-04 Chiyou Lsi Gijutsu Kenkyu Kumiai Single field alignment method
JPS55133887A (en) * 1979-04-07 1980-10-18 Hitachi Ltd Electron beam radiation apparatus
JPS5536990A (en) * 1979-07-16 1980-03-14 Toshiba Corp Apparatus for applying electron beam

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150422A (en) * 1983-01-31 1984-08-28 Fujitsu Ltd Exposure process
JPH0352210B2 (en) * 1983-01-31 1991-08-09 Fujitsu Ltd
JPS60741A (en) * 1983-06-16 1985-01-05 Toshiba Mach Co Ltd Exposure by electron beam
JPH01201919A (en) * 1988-02-05 1989-08-14 Jeol Ltd Charge beam lithography equipment

Also Published As

Publication number Publication date
JPS6320376B2 (en) 1988-04-27

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